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Spencer, M. G.

Publications and source records attributed to Spencer, M. G..

8 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

High efficiency radio frequency antennas for amplifier free quantum sensing applications

Radio frequency (RF) signals are frequently used in emerging quantum applications due to their spin state manipulation capability. Efficient coupling of RF signals into a particular quantum system requires the utilization of carefully designed and fabricated antennas. Nitrogen vacancy (NV) defects in diamond are commonly utilized platforms in quantum sensing experiments with the optically detected magnetic resonance (ODMR) method, where an RF antenna is an essential element. We report on the design and fabrication of high efficiency coplanar RF antennas for quantum sensing applications. Single and double ring coplanar RF antennas were designed with -37 dB experimental return loss at 2.87 GHz, the zero-field splitting frequency of the negatively charged NV defect in diamond. The efficiency of both antennas was demonstrated in magnetic field sensing experiments with NV color centers in diamond. In conclusion, an RF amplifier was not needed, and the 0 dB output of a standard RF signal generator was adequate to run the ODMR experiments due to the high efficiency of the RF antennas.

47 OTHER INSTRUMENTATION↗
NASA NTRS1993

Electron Mobility Studies of Device Quality InAs/GaAs Short Period Supprlattices Grown by Dynamic Stoichiometry Control and Floating In Flash-off Methods

The Strained Layer InGaAs/GaAs system has been the subject of substantial work emphasizing both growth studies and device applications. Relatively few studies have successfully explored the binary InAs on GaAs system because of the difficulties of maintaining a specular growth front and the apparently small value of the critical thickness.

Electron Mobility↗
NASA NTRS1991

Second harmonic conversion in cubic silicon carbide at 1.06 micron

This letter describes second harmonic conversion in cubic silicon carbide (beta-SiC) at a wavelength of 1.06 micron. Epitaxial layers of beta-SiC formed by vapor phase growth on silicon are indeed birefringent, and thus phase matchable. Phase-matched films of beta-SiC have respectable conversion efficiencies even in the presence of adsorption at 532 nm. The measured value of the effective second order nonlinear susceptibility for beta-SiC is chi super (2) eff = 1.05 +/- 0.3 x 10 exp -9 esu.

Harris, G. L.↗
NASA NTRS1989

Metastable defects in Be-doped Al(x)Ga(1-x)As

Deep-level transient spectroscopy has been used to study metastable defects in Be-doped Al(x)Ga(1-x)As grown by molecular-beam epitaxy. The metastability manifests itself by the appearance of different spectra depending upon whether the sample is cooled from a high temperature with zero bias or a reverse bias applied to it. The defects are found in concentrations of 10 to the 15th/cu cm in a sample doped with 10 to the 18th Be/cu cm and in much lower concentrations in a 10 to the 17th Be/cu cm sample. Isochronal annealing experiments indicate that the defect is multistable and that it is best modeled as a mobile interstitial which can reside at several sites near acceptor. The activation energies for these defects are between 0.2 and 0.5 eV above the valence band.

Magno, R.↗
NASA NTRS1987

Observation of deep levels in cubic silicon carbide

A deep level transient spectroscopy (DLTS) study on n-type epitaxial cubic silicon carbide grown on Si substrates has been performed. The results of this study indicate the presence of at least two majority-carrier traps. One trap is located 0.34 eV from the conduction-band edge; and the other trap is located 0.68 eV from the conduction-band edge. These two traps have concentrations of approximately 1 x 10 the 15th/cu cm. The DLTS spectrum has been investigated as a function of the surface treatment of the SiC. The results of this investigation indicate that one of the levels (SCE2) appears to be formed as a result of high temperature thermal oxidation.

Zhou, Peizhen↗
NASA NTRS1986

Identification of the Ga interstitial in Al(x)Ga(1-x)As by optically detected magnetic resonance

A new optically detected magnetic resonance spectrum in Al(x)Ga(1-x)As is reported and assigned to native Ga interstitials. Luminescence-quenching signals were observed over the energy region from 0.75 to 1.1 eV. The optically detected magnetic resonance is nearly isotropic, with spin-Hamiltonian parameters g = 2.025 + or - 0.006, central hyperfine splitting A(Ga-69) = 0.050 + or - 0.001/cm, and A(Ga-71) = 0.064 + or - 0.001/cm for H near the 001 line. The strong hyperfine coupling denotes an electronic state of A1 symmetry, which current theories predict for the Ga interstitial but not the Ga antisite. The slight anisotropy probably indicates that the Ga(i) is paired with a second, unknown defect.

Kennedy, T. A.↗
NASA NTRS1984

Formation of planar n(+) pockets in GaAs for mixer diode fabrication

A novel technique has been developed to produce n(+) 'pockets' in semiinsulating GaAs bulk material. This technique has produced thick pockets of highly conducting epitaxial material on the substrate surface. The pockets were formed by the growth of a liquid-phase epitaxial (LPE) layer into holes which had been etched into the substrate. Surface uniformity was obtained by chemo-mechanically polishing the substrate surface under tightly controlled conditions. Polishing rates as low as 0.2 micron/min have been obtained. Photographs taken of the pocket cross-sectional area have revealed that growth occurred throughout the entire pocket region. Growth was even found to have occurred along the irregularly shape walls of the packets. The continuous growth throughout the pockets coupled with the subsequent polishing of the substrate have produced exceptionally smooth and planar surfaces. Thicknesses as great as 10 microns have been obtained for the n(+) pockets using this technique. Mixer diodes have been fabricated onto these layers and tested. Preliminary dc measurements taken on these devices have yielded a zero-biased cutoff frequency (Fco) of 800 GHz with a series resistance (Rs) of 6 omega and a zero-biased capacitance (Co) of 30 fF.

Griffin, J. A.↗