Engineering topics

Spiers, G. D.

Publications and source records attributed to Spiers, G. D..

6 records

NASA NTRS2003

Laser Remote Sensing and Lidar Measurements for Planetary Bodies

Laser Remote Sensing and lidar have been used for earth remote sensing for a number of years however the inefficiency of laser devices has limited their application to planetary sensing where power is at a premium. The potential availability of a large amount of power for the Jupiter Icy Moons Orbiter (JIMO) opens up the potential to implement laser remote sensing for planetary bodies. Lidars have been and can be used to map terrain, measure atmospheric and surface parameters including velocity and composition. In this paper we will provide an overview of the lidar capabilities at the Jet Propulsion Laboratory and address the types of lidar measurements that could be relevant to JIMO science investigations.

Spiers, G. D.↗

NASA NTRS2002

The laser absorption spectrometer for carbon dioxide sink and source detection

We provide an overview of the laser absorption spectrometer development that has recently been funded under the Instrument Incubator Program.

laser remote sensing lidar global carbon cycle↗

NASA NTRS2002

JPL laser remote sensing group

Explore the source record for details and available documents.

laser lidar lidar remote sensing↗

NASA NTRS2000

Results of analyses in support of the National Polar Orbiting Earth System Sensor Integrated Program Office hybrid doppler lidar feasibility study

Explore the source record for details and available documents.

hybrid doppler lidar earth-orbiting wind lidar↗

NASA NTRS1981

An experimental investigation of silicon wafer surface roughness and its effect on the pull-strength of plated metals

Plated silicon wafers with surface roughness ranging from 0.4 to 130 microinches, subjected to tensile pull-strength tests, were analyzed. Results show that the measured pull-strength of plated metals decrease with increasing silicon surface roughness, effecting a weakening of the cohesive strength of the wafer, possibly caused by microcracks or 'etch pits' in the silicon surface. The mean value of pull-strength for all wafers plated with the Ni-Cu-Cu sequence exceeded the required 450 g/0.02 sq cm, and at Ra = 0.4 microinches, the mean pull-strength for the Ni-Cu-Cu and Ni-Cu wafers were 2290 and 850 g/0.02 sq cm, respectively. The development of standardized methods for measuring contact pull-strength is suggested. These results may have some bearing on solar cell arrays problems.

Spiers, G. D.↗

NASA NTRS1981

An experimental investigation of silicon wafer surface roughness and its effect on the full strength of plated metals

Plated silicon wafers with surface roughness ranging from 0.4 to 130 microinches were subjected to tensile pull strength tests. Electroless Ni/electroless Cu/electroplated Cu and electroless Ni/electroplated Cu were the two types of plate contacts tested. It was found that smoother surfaces had higher pull strength than rougher, chemically etched surfaces. The presence of the electroless Cu layer was found to be important to adhesion. The mode of fracture of the contact as it left the silicon was studied, and it was found that in almost all cases separation was due to fracture of the bulk silicon phase. The correlation between surface roughness and mode of contact failure is presented and interpreted.

Spiers, G. D.↗