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Stafsudd, O. M.

Publications and source records attributed to Stafsudd, O. M..

12 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Multiwavelength analyzer for the determination of diffusion lengths

The minority carrier diffusion length Ln in the base or substrate region is an important parameter which governs a solar cell's performance. The present investigation is concerned with the development of a multiwavelength analyzer (MWA) technique for the nondestructive spatial testing of polycrystalline solar cells. The MWA method is based on the utilization of the short-circuit current generated by two or more light-emitting diodes (LEDs) operating at different wavelengths and modulated 180 deg out-of-phase. For a determination of Ln by the MWA technique, it is necessary to know the value of the absorption coefficient.

Stafsudd, O. M.↗
NASA NTRS1981

Present growth technology of silicon germanium alloys and possible advantages of microgravity growth

The growth technology of Silicon-germanium (Si-Ge) alloys and the possible advantages of growth in microgravity is reviewed. The Si-Ge alloys have a continuous variation of bandgap energy from the germanium bandgap to the silicon bandgap. The unusual two slope behavior of Eg versus composition is due to the differences in the conduction band structure between Si and Ge. Below 17% (atomic), the germanium band structure dominates; and above it, the bands are "silicon like". It is found that the growth of Si-Ge alloys in microgravity is very attractive. In particular, the float zone method, in which a liquid zone of controlled starting composition, used to grow a large amount of useful alloy crystal. Large temperature gradients and relatively flat growth interfaces are necessary to obtain homogeneous crystal growth.

Stafsudd, O. M.↗
NASA NTRS1980

Silicon Solar Cell Fabrication Technology

Device fabrication and photoconductive lifetime decay measurements were used to characterize single and polycrystalline silicon substracts. The device characterization of the processed materials was done by spectral response measurements and absolute quantum efficiency at a single wavelength. The results were then reduced to yield the diffusion length of the various samples. The photoconductive lifetime decay method was implemented in order to determine the minority carrier lifetime in unprocessed wafers.

Stafsudd, O. M.↗
NASA NTRS1979

Silicon solar cell fabrication technology

The laser cell scanner was used to characterize a number of solar cells made in various materials. An electron beam-induced current (EBIC) study was performed using a stereoscan scanning electron microscope. Planar p-n junctions were analyzed. A theory for the EBIC based on the analytical solution of the ambipolar diffusion equation under the influence of electron beam excitation parameter z (which is related to beam penetration), the junction depth Z sub j, the beam current and the surface recombination, was formulated and tested. The effect of a grain boundary was studied.

Stafsudd, O. M.↗
NASA NTRS1973

The application of far IR lasers to the investigation of the optical properties of materials

The effect of diffusion on the saturation and absorption properties of molecular gases is considered. The analysis starts with a simple derivation of the multi-level rate equations. Incorporating the diffusion term, calculations are carried out both for the homogeneous and inhomogeneous broadening cases. Both graphical and analytical solutions are obtained for the absorption coefficient and the saturation intensity. It is shown that the effect of diffusion is characterized by a diffusion function, which varies inversely with the radius of the beam at low pressures and small beam sizes. The analysis is done in terms of two parameters k1a and k2a, which are simple functions of the intensity of the beam I, the effective relaxation rate w, and the effective diffusion constant D the a is designated as the radius of the beam.

Stafsudd, O. M.↗
NASA NTRS1971

Characteristics of the continuous wave neutral argon laser.

Study of the characteristics of the CW neutral argon IR laser, using a variety of techniques. The output power enhancement effects of helium and chlorine gases are measured, and the reasons for the enhancement are determined. The gain is measured for the 2.397-, 2.208-, 2.062-, and 1.792-micron laser lines, using an internal cavity-loss method and a single-pass amplifier method. In addition, the saturation intensity is measured, and competition effects are studied. It is concluded that helium aids excitation of the upper laser levels by producing a significant increase in the electron temperature. Chlorine is shown to aid deexcitation of the lower laser levels by partially depopulating the metastable argon 4s levels that lie just below them.

Dauger, A. B.↗