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NASA NTRS1995

Monolithic Active-Pixel Infrared Sensors

Monolithic arrays of active-pixel junction field-effect (JFET) devices made from InGaAs proposed for use as imaging sensors sensitive to light in visible and short-wavelength infrared parts of electromagnetic spectrum. Each pixel of such array comprises photodetector monolithically integrated with JFET output-amplifier circuit of source-follower type - structure similar to charge-coupled device (CCD). Sizes of instruments reduced because large cooling systems not needed.

Fossum, Eric R.↗

NASA NTRS1995

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Fossum, Eric R.↗

NASA NTRS1994

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Fossum, Eric R.↗

NASA NTRS1992

Chamber For Testing Infrared Imaging Detectors

Chamber provides cold, vacuum, low-background-radiation environment and optical and electrical feedthroughs needed for testing and calibration of planar arrays of long-wavelength infrared photodetectors. Equipped with multiple ports for vacuum pumps, vacuum gauges, cryogenic fluids, sources of radiation, and camera heads. Accommodates variety of infrared sources, detectors, and associated equipment for testing at temperatures down to about 4.2 K in low-background-radiation environment.

Staller, Craig O.↗