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Stapleton, R. E.

Publications and source records attributed to Stapleton, R. E..

10 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Development of an 1100 deg F capacitor

The feasibility of developing a high temperature capacitor for 1100 F operation which is as small and light as conventional capacitors for normal operating temperatures is discussed. Pyrolyic boron nitride (PBN) was selected for the dielectric. The PBN capacitors were made by slicing and lapping material from thick blocks and then sputtering thin film electrodes. These capacitors had breakdown strengths of 7,000 volts per mil and a dissipation factor of less than 0.001 at 1100 F. Additional processing improvements were made after testing a multi-layer or stacked PBN capacitor for 1,000 hours at 1100 F. Sputter etching the wafers before depositing electrodes resulted in a reduction in dissipation factor. A sputtered boron nitride film applied to the outer electrode surfaces produced a more stable capacitor. A design for a 0.1 mu F capacitor and a summary of PBN wafer fabrication costs are given.

Stapleton, R. E.↗
NASA NTRS1980

Effect of impurities and processing on silicon solar cells. Volume 1: Characterization methods for impurities in silicon and impurity effects data base

Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. Discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, conventional solar cell I-V techniques, and descriptions of silicon chemical analysis are presented and discussed. The tabulated data include lists of impurity segregation coefficients, ingot impurity analyses and estimated concentrations, typical deep level impurity spectra, photoconductive and open circuit decay lifetimes for individual metal-doped ingots, and a complete tabulation of the cell I-V characteristics of nearly 200 ingots.

Hopkins, R. H.↗
NASA NTRS1979

Phase 2 of the Array Automated Assembly Task for the Low Cost Solar Array Project

Two process specifications supplied by contractors were tested. The aluminum silk screening process resulted in cells comparable to those from sputtered Al. The electroless plating of contacts specification could be used only with extensive modification. Several experiments suggest that there is some degradation of the front junction during the Al back surface field (BSF) fabrication. A revised process sequence was defined which incorporates Al BSF formation. A cost analysis of this process yielded a selling price of $0.75/watt peak in 1980.

Campbell, R. B.↗
NASA NTRS1979

Silicon Materials Task of the Low Cost Solar Array Project, Phase 3. Effect of Impurities and Processing on Silicon Solar Cells

The effects of impurities, various thermochemical processes, and any impurity process interactions on the performance of terrestrial silicon solar cells are defined. Determinations of the segregation coefficients of tungsten, tantalum, and cobalt for the Czochralski pulling of silicon single crystals are reported. Sensitive neutron activation analysis was used to determine the metal impurity content of the silicon while atomic absorption was used to measure the metal content of the residual liquid from which the doped crystals were grown. Gettering of Ti doped silicon wafers improved cell performance by one to two percent for the highest temperatures and longest times. The HCl is more effective than POCl3 treatments for deactivating Ti but POCl3 and HCl produced essentially identical results for Mo or Fe.

Hopkins, R. H.↗
NASA NTRS1979

Effects of Impurities and Processing on Silicon Solar Cells, Phase 3

Results of the 14th quarterly report are presented for a program designed to assess the effects of impurities, thermochemical processes and any impurity process interactions on the performance of terrestrial silicon solar cells. The Phase 3 effort encompasses: (1) potential interactions between impurities and thermochemical processing of silicon; (2) impurity-cell performance relationships in n-base silicon; (3) effect of contaminants introduced during silicon production, refining or crystal growth on cell performance; (4) effects of nonuniform impurity distributions in large area silicon wafers; and (5) a preliminary study of the permanence of impurity effects in silicon solar cells.

Hopkins, R. H.↗
NASA NTRS1979

Phase 2 of the array automated assembly task for the low cost solar array project

The process sequence for the fabrication of dendritic web silicon into solar panels was modified to include aluminum back surface field formation. Plasma etching was found to be a feasible technique for pre-diffusion cleaning of the web. Several contacting systems were studied. The total plated Pd-Ni system was not compatible with the process sequence; however, the evaporated TiPd-electroplated Cu system was shown stable under life testing. Ultrasonic bonding parameters were determined for various interconnect and contact metals but the yield of the process was not sufficiently high to use for module fabrication at this time. Over 400 solar cells were fabricated according to the modified sequence. No sub-process incompatibility was seen. These cells were used to fabricate four demonstration modules. A cost analysis of the modified process sequence resulted in a selling price of $0.75/peak watt.

Campbell, R. B.↗
NASA NTRS1967

High-temperature /1100 degrees F/ capacitors operate without supplement cooling

Multilayered capacitor with one-mil thick pyrolytic boron nitride and wrap around sputtered electrodes achieves parallel electrical interconnections in a stacked configuration of 3 to 9 wafers. These capacitors are compact, lightweight, and suitable for operation in high temperatures without supplemental cooling.

Stapleton, R. E.↗