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Statler, R. L.

Publications and source records attributed to Statler, R. L..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Radiation and temperature effects in gallium arsenide, indium phosphide and silicon solar cells

The effects of radiation on performance are determined for both n(+)p and p(+)n GaAs and InP cells and for silicon n(+)p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1 MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation induced boron-oxygen defect. Comparison of radiation damage in both p(+)n and n(+)p GaAs cells yields a decreased radiation resistance for the n(+)p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n(+)p configuration is found to have greater radiation resistance than the p(+)n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/cT which predicts that increased Voc should results in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP a result which is attributed to variations in cell processing.

Weinberg, I.↗
NASA NTRS1987

Radiation and temperature effects in gallium arsenide, indium phosphide, and silicon solar cells

The effects of radiation on performance are determined for both n+p and p+n GaAs and InP cells and for silicon n+p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1-MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation-induced boron-oxygen defect. Comparison of radiation damage in both p+n and n+p GaAs cells yields a decreased radiation resistance for the n+p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n+p configuration is found to have greater radiation resistance than the p+n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/dT, which predicts that increased Voc should result in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP, a result which is attributed to variations in cell processing.

Weinberg, I.↗
NASA NTRS1980

Three year performance of the NTS-2 solar cell experiment

Twelve different solar cell modules from the NTS 2 experiment are functioning after more than three years in a severe trapped radiation orbit of 20,367 km (10,990 nm) circular, 63 deg inclination. The rate of maximum power degradation may be fit to a predicted rate which is based on twice the value of 1 MeV electron equivalent damage fluence calculated from the space electron model AEI 7. The photovoltaic parameters of the cells are compared to their original values to demonstrate rank order of performance.

Statler, R. L.↗
NASA NTRS1979

An interim report on the NTS-2 solar cell experiment

Data obtained from the fourteen solar cell modules on the NTS-2 satellite are presented together with a record of panel temperature and sun inclination. The following flight data are discussed: (1) state of the art solar cell configurations which embody improvements in solar cell efficiency through new silicon surface and bulk technology, (2) improved coverslip materials and coverslip bonding techniques, (3) short and long term effects of ultraviolet rejection filters vs. no filters on the cells, (4) degradation on a developmental type of liquid epitaxy gallium-aluminum-arsenide solar cell, and (5) space radiation effects.

Statler, R. L.↗
NASA NTRS1974

Results of the first 150 days of the NTS-1 solar cell experiments

Twelve solar cell experiments were on the Naval Research Laboratory NTS-1 satellite launched on 14 July 1974, into a 13,260 km circular orbit at an inclination of 125 deg. The experiment comprises: 2 ohm-cm n/p, lithium-diffused p/n, violet n/p, p(+) back surface field, and ultra-thin wrap around contact cells. The short-circuit current of the experiments ranged from 2 to 12 percent higher in space than under solar simulators. During the 5 year life of the satellite, the experiments will be exposed to radiation equivalent to 2 x 10 to the 15th power 1-MeV electron cm/2 and to nearly 5500 thermal cycles.

Statler, R. L.↗
NASA NTRS1971

Radiation damage and annealing of lithium-doped silicon solar cells

Evidence has been presented that a lithium-diffused crucible-grown silicon solar cell can be made with better efficiency than the flight-quality n p 10 ohms-cm solar cell. When this lithium cell is exposed to a continuous radiation evironment at 60 C (electron spectrum from gamma rays) it has a higher power output than the N/P cell after a fluence equivalent to 1 MeV. A comparison of annealing of proton- and electron-damage in this lithium cell reveals a decidedly faster rate of recovery and higher level of recoverable power from the proton effects. Therefore, the lithium cell shows a good potential for many space missions where the proton flux is a significant fraction of the radiation field to be encountered.

Statler, R. L.↗