Engineering topics
Publications and source records attributed to Stith, John J..
A version of the binary-collision simulation code MARLOWE was used to study the spatial characteristics of radiation damage in proton and electron irradiated gallium arsenide. Comparisons made with the experimental results proved to be encouraging.
The lack of additivity of proton and electron exposure of GaAs solar cells has been established as due to macroscopic variations in defect densities. The difference in annealing in proton and electron exposure is herein related to the microscopic variation in defect structures. Electron equivalence can be established when annealing is present only for high energy electrons.