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Stodolna, J.

Publications and source records attributed to Stodolna, J..

Effect of Boron Content on Hot Ductility and Hot Cracking Susceptibility in 316L Austenitic Stainless Steel for Welding Components

Liquation cracking may occur in the heat-affected zone during welding. Two factors influence this phenomenon: the tensile stresses generated during welding and the potential loss of ductility due to the presence of a liquid film at grain boundaries depending on their chemical composition. Gleeble hot ductility tests have been used to study the combined effect of boron content and holding time on ductility drop in the liquation temperature range of a 316L type austenitic stainless steel. It is shown that high boron contents and short holding times promote the loss of ductility in this temperature range. Secondary ion mass spectrometry has been used to correlate mechanical results to boron distribution either at grain boundaries or in the bulk. Other welding tests have been performed to confirm the influence of boron content on hot cracking sensitivity of AISI 316L stainless steels. Results indicate that cracks appear on all specimens but at different strain levels. The higher the boron content is, the more the specimen exhibits tendency to hot cracking.

36 MATERIALS SCIENCE↗

Abrupt GaP/Si hetero-interface using bistepped Si buffer

We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗