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Strauss, Karl F.

Publications and source records attributed to Strauss, Karl F..

6 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

Remote Sensing and Quantization of Analog Sensors

This method enables sensing and quantization of analog strain gauges. By manufacturing a piezoelectric sensor stack in parallel (physical) with a piezoelectric actuator stack, the capacitance of the sensor stack varies in exact proportion to the exertion applied by the actuator stack. This, in turn, varies the output frequency of the local sensor oscillator. The output, F(sub out), is fed to a phase detector, which is driven by a stable reference, F(sub ref). The output of the phase detector is a square waveform, D(sub out), whose duty cycle, t(sub W), varies in exact proportion according to whether F(sub out) is higher or lower than F(sub ref). In this design, should F(sub out) be precisely equal to F(sub ref), then the waveform has an exact 50/50 duty cycle. The waveform, D(sub out), is of generally very low frequency suitable for safe transmission over long distances without corruption. The active portion of the waveform, t(sub W), gates a remotely located counter, which is driven by a stable oscillator (source) of such frequency as to give sufficient digitization of t(sub W) to the resolution required by the application. The advantage to this scheme is that it negates the most-common, present method of sending either very low level signals (viz. direct output from the sensors) across great distances (anything over one-half meter) or the need to transmit widely varying higher frequencies over significant distances thereby eliminating interference [both in terms of beat frequency generation and in-situ EMI (electromagnetic interference)] caused by ineffective shielding. It also results in a significant reduction in shielding mass.

Strauss, Karl F.↗
NASA NTRS2011

Auto Draw from Excel Input Files

The design process often involves the use of Excel files during project development. To facilitate communications of the information in the Excel files, drawings are often generated. During the design process, the Excel files are updated often to reflect new input. The problem is that the drawings often lag the updates, often leading to confusion of the current state of the design. The use of this program allows visualization of complex data in a format that is more easily understandable than pages of numbers. Because the graphical output can be updated automatically, the manual labor of diagram drawing can be eliminated. The more frequent update of system diagrams can reduce confusion and reduce errors and is likely to uncover symmetric problems earlier in the design cycle, thus reducing rework and redesign.

Strauss, Karl F.↗
NASA NTRS2011

Nanoscale Deformable Optics

Several missions and instruments in the conceptual design phase rely on the technique of interferometry to create detectable fringe patterns. The intimate emplacement of reflective material upon electron device cells based upon chalcogenide material technology permits high-speed, predictable deformation of the reflective surface to a subnanometer or finer resolution with a very high degree of accuracy. In this innovation, a layer of reflective material is deposited upon a wafer containing (perhaps in the millions) chalcogenic memory cells with the reflective material becoming the front surface of a mirror and the chalcogenic material becoming a means of selectively deforming the mirror by the application of heat to the chalcogenic material. By doing so, the mirror surface can deform anywhere from nil to nanometers in spots the size of a modern day memory cell, thereby permitting realtime tuning of mirror focus and reflectivity to mitigate aberrations caused elsewhere in the optical system. Modern foundry methods permit the design and manufacture of individual memory cells having an area of or equal to the Feature (F) size of the design (assume 65 nm). Fabrication rules and restraints generally require the instantiation of one memory cell to another no closer than 1.5 F, or, for this innovation, 90 nm from its neighbor in any direction. Chalcogenide is a semiconducting glass compound consisting of a combination of chalcogen ions, the ratios of which vary according to properties desired. It has been shown that the application of heat to cells of chalcogenic material cause a large alteration in resistance to the range of 4 orders of magnitude. It is this effect upon which chalcogenidebased commercial memories rely. Upon removal of the heat source, the chalcogenide rapidly cools and remains frozen in the excited state. It has also been shown that the chalcogenide expands in volume because of the applied heat, meaning that the coefficient of expansion of chalcogenic materials is larger than 1. In this innovation, chalcogenidebased cells are addressed (as though they are a memory), and heated and cooled according to well-established criteria. In doing so, the exact size of chalcogenide cell deformation is known and predictable; therefore, the deformation of the reflective surface is, likewise, known and predictable. Control electronics can also be implemented so that a closed-loop feedback can be maintained. Changing the contents of the chalcogenide memory cells can compensate for any change in environmental effects that might cause a change in optical path. This real-time control provides significant control and stability in use conditions.

Strauss, Karl F.↗
NASA NTRS2006

The Effect of Integration of Strontium-Bismuth-Tantalate Capacitors onto SOI Wafers

We report for the first time the successful integration of Strontium-Bismuth-Tantalate ferroelectric capacitors on an SOI Substrate. We have verified that the unique processing requirements of SBT capacitors does not affect the properties of the surrounding FD-SOI transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors.

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