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Su, C.

Publications and source records attributed to Su, C..

10 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Magnetic anisotropy in permalloy antidot square lattice

Here, magnetic anisotropy of Permalloy (Py) antidot square lattice was investigated by torquemetry method using Rotation Magneto-Optic Kerr Effect (ROTMOKE). We find that there exists a field-dependent 4-fold magnetic anisotropy with the easy magnetization axis along the axis of the antidot square lattice. In addition, there also exists an artifact of a uniaxial magnetic anisotropy in ROTMOKE result. We show that both results are due to the period wiggling of the magnetization in space which was confirmed by magnetic imaging using magnetic transmission soft x-ray microscopy (MTXM). Micromagnetic simulation from MuMax3 supports the wiggling structure of the magnetization, as well as reproduces ROTMOKE result. A simplified model was developed based on the periodic wiggling of the magnetization and successfully explored the physical origin of the field-dependent 4-fold anisotropy and the artifact of the uniaxial anisotropy.

36 MATERIALS SCIENCE↗
NASA NTRS2004

Thermophysical Properties and Structural Transition of Hg(0.8)Cd(0.2)Te Melt

Thermophysical properties, namely, density, viscosity, and electrical conductivity of Hg(sub o.8)Cd(sub 0.2)Te melt were measured as a function of temperature. A pycnometric method was used to measure the melt density in the temperature range of 1072 to 1122 K. The viscosity and electrical conductivity were simultaneously determined using a transient torque method from 1068 to 1132 K. The density result from this study is within 0.3% of the published data. However, the current viscosity result is approximately 30% lower than the existing data. The electrical conductivity of Hg(sub o.8)Cd(sub 0.2)Te melt as a function of temperature, which is not available in the literature, is also determined. The analysis of the temperature dependent electrical conductivity and the relationship between the kinematic viscosity and density indicated that the structure of the melt appeared to be homogeneous when the temperature was above 1090 K. A structural transition occurred in the Hg(sub 0.8)Cd(0.2)Te melt as the temperature was decreased from 1090 K to the liquidus temperature.

Li, C.↗
NASA NTRS2004

Thermophysical Properties of Liquid Te: Density, Electrical Conductivity, and Viscosity

The thermophysical properties of liquid Te, namely, density, electrical conductivity, and viscosity, were determined using the pycnometric and transient torque methods from the melting point of Te (723 K) to approximately 1150 K. A maximum was observed in the density of liquid Te as the temperature was increased. The electrical conductivity of liquid Te increased to a constant value of 2.89 x 10(exp 5 OMEGA-1m-1) as the temperature was raised above 1000 K. The viscosity decreased rapidly upon heating the liquid to elevated temperatures. The anomalous behaviors of the measured properties are explained as caused by the structural transitions in the liquid and discussed in terms of Eyring's and Bachiskii's predicted behaviors for homogeneous liquids. The Properties were also measured as a function of time after the liquid was coded from approximately 1173 or 1123 to 823 K. No relaxation phenomena were observed in the properties after the temperature of liquid Te was decreased to 823 K, in contrast to the relaxation behavior observed for some of the Te compounds.

Li, C.↗
NASA NTRS2003

Transient Torque Method: A Fast and Non-Intrusive Technique to Simultaneously Determine Viscosity and Electrical Conductivity of Semiconducting and Metallic Melts

A transient torque method was developed to rapidly and simultaneously determine the viscosity and electrical conductivity of semiconducting or metallic melts. The experimental setup is similar to that for the oscillation cup technique. The melt sample is sealed inside a fused silica ampoule, and the ampoule is suspended by a long quartz fiber to form a torsional oscillation system. A rotating magnetic field is used to induce a rotating flow in the conductive melt, which causes the ampoule to rotate along its axis. A sensitive angular detector is used to measure the deflection angle of the ampoule. Based on the transient behavior of the deflection angle as the rotating magnetic field is applied, the electrical conductivity and viscosity of the melt can be obtained simultaneously by numerically fitting the data to a set of governing equations. The transient torque viscometer was applied successfully to measure the viscosity and electrical conductivity of high purity mercury at 53.4 C. The results were in excellent agreement with the published data. The main advantage of the technique is that the measurement can be completed in one or two minutes, as opposed to the one or two-hour measurement time required by the oscillation cup technique. The method is non-intrusive; capable of rapid measurement of the viscosity of toxic, high vapor pressure melts at elevated temperatures. In addition, the transient torque viscometer can also be operated as an oscillation cup viscometer if desired.

Li, C.↗
NASA NTRS2001

Synthesis of Carbon Nanotubes Array by CVD

Since the properties of multi-wall carbon nanotubes (MWCNT) are superior in many devices such as electronics and sensors, many efforts have been involved in synthesizing particular structural or dimensional MWCNT. Uniform aligned MWCNT array is one of the prototype structures for devices such as filed emission device and microelectromechanical systems in which a large length to diameter ratio may also be required. Most aligned MWCNT recently synthesized by plasma enhanced chemical vapor deposition (CVD) have cone shaped structures. This presentation will illustrate aligned MWCNT array synthesized on silicon substrates using thermal CVD that could produce MWCNT with uniform diameter. An array of nickel particles was used as catalyst for MWCNT growth. A thin Ti or Au buffer layer was coated on the substrate prior to depositing nickel particles. Because the MWCNT size depends on the catalyst particle size, the nickel particle size annealed at various temperatures was investigated. MWCNT were grown on the substrate in the temperature range of 700 C - 1000 C and the pressure range of 1 to 300 torr. Methane and hydrogen gases with methane content of 1 - 10 % were used for the MWCNT synthesis. Morphology, length and diameter of MWCNT were determined by scanning electron microscopy and Raman spectroscopy. The detailed results of synthesis and characterizations will be discussed in the presentation.

Zhu, S.↗
NASA NTRS2001

Vapor Growth of Binary and Ternary Chalcogenides in Preparation for Microgravity Experiments

In the bulk crystal growth of some technologically important semiconducting chalcopyrites, such as ZnTe, CdS, ZnSe and ZnS, vapor growth techniques have significant advantages over melt growth techniques due to the high melting points of these materials. The realization of routine production of high-quality single crystals of these semiconductors requires a fundamental, systematic and in-depth study on the PVT growth process and crystal growth by vapor transport in low gravity offers a set of unique conditions for this study. Previously, two reasons have been put forward to account for this. The first is weight-related reductions in crystal strain and defects. These are thought to be caused by the weight of the crystals during processing at elevated temperatures and retained on cooling, particularly for materials with a low yield strength. The second, and more general, reason is related to the reduction in density-gradient driven convection. The PVT crystal growth process consists of essentially three processes: sublimation of the source material, transport of the vapor species and condensation of the vapor species to form the crystal. The latter two processes can be affected by the convection caused by gravitational accelerations on Earth. Reductions in such convection in low gravity is expected to yield a nearly diffusion-limited growth condition which results in more uniform growth rates (on the microscopic scale) and hence greater crystalline perfection and compositional homogeneity. The reduction of convective contamination by performing flight experiments in a reduced gravity environment will help to understand the relation between fluid phase processes (growth parameters) and defect and impurity incorporation in grown crystals.

Su, C.↗
NASA NTRS2001

Carbon Nanotubes Grown By CVD in Various Conditions

Since the superior properties of multi-wall carbon nanotubes (MWCNT) could be used in numerous devices such as electronics and sensors, many efforts have been engaged in synthesizing particular structural or dimensional MWCNT. This presentation will illustrate MWCNT synthesized on silicon substrates by thermal CVD. On the substrate, an array of catalysts is coated using sputtering deposition. A thin Ti buffer layer is also coated on some Si substrates prior to depositing catalyst particles. Nickel, cobalt or iron transition metals are used as catalysts for the MWCNT growth. Since the diameter of MWCNT depends on the size of catalyst particles, the catalyst particle size is investigated after annealed at various temperatures. MWCNT are grown on the substrate in the temperature range of 700 to 1000 C and the pressure range of 100 torr to one atmosphere. Methane and hydrogen gases with methane content of 10% to 100% are used for the MWCNT synthesis. Morphology, length and diameter of these MWCNT are determined by scanning electron microscopy and Raman spectroscopy. The detailed results of syntheses and characterizations will be discussed in the presentation.

Zhu, S.↗
NASA NTRS2001

Transport Phenomena of Off-Axis Sputtering Deposition

Various high quality epitaxial films, especially oxides, have been synthesized using off-axis sputtering deposition. In this presentation, we report the experiment results of ZnO films grown by the off-axis sputtering deposition. Films were synthesized in temperatures ranged from room temperature to 600 C, and pressures from 5 mTorr to 150 mTorr. Film growth rate was measured by surface profilometer, ellipsometer, and wavelength dispersive spectrometry. Due to the collisions between the sputtered species and the residue gases, the kinetic energy of species was reduced and the transport of depositing species changed from a ballistic movement for low pressure to a diffusive drift for high pressure in which the transport species were almost thermalized. The measurements show an increase of growth rates along the gravity vector when the Knudsen number of transport species is less than 0.05, which suggests that gravity affected the transport characterization in off-axis sputtering deposition. Because the product of pressure (p) and travel distance (d) of sputtered species, pd, exceeds several mTorr-cm during film deposition, the classical simulations for sputtering process in high vacuum system may not be applied. Based on these experimental measurements, a transport process of the off-axis sputtering deposition is proposed. Several models including the Monte Carlo method and gravity-driven flow dynamics simulation will be discussed.

Zhu, S.↗