Search NASA⌕ Search

Engineering topics

Subramanyam, Guru

Publications and source records attributed to Subramanyam, Guru.

11 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Seamless Wireless Communication Platform for Internet of Things Applications

The rapid growth of the Internet of Things (IoT) devices resulted in the proliferation of wireless technologies to cater to their increasing data rate requirements and support multiple applications. However, such ever-increasing wireless technologies present numerous challenges such as incompatible wireless standards, increased energy consumption, and insecure communication. The traditional gateways proposed in the literature suffers from limitations such as computational complexity, resource requirements, increased cost, and device size. We vision an era of seamless wireless communication to alleviate the aforementioned challenges in IoT applications. through three inter-dependent functionalities namely detection and identification of wireless technologies, energy-efficient transmit power control, and secure end-to-end communication. To prove the concept, a new gateway is proposed to achieve these three functionalities with only physical layer measurements so that the different communication protocols in the higher layers can be avoided. Novel schemes are conceptualized for resource-limited seamless IoT applications. Moreover, the conceptual seamless IoT platform is validated through software-based computer simulation and software-defined radio-based testbed implementation. Finally, the preliminary analysis demonstrates that the proposed platform has great potential in advancing seamless IoT applications.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Autonomous Wireless Technology Detection in Seamless IoT Applications

The ever-increasing use of Internet of Things (IoT) devices results in the implementation of multiple wireless technologies that would not only cater their data rate requirements but also support various applications. To optimize the energy efficiency and security of the wireless transmission, it is imperative to identify the wireless technologies in various IoT implementations. Many of the existing approaches are based on measuring only the receiving signal strength indicator (RSSI). However, such approaches may not work well because of transmit power control and complex channel variations among different wireless technologies. In this article, we propose an autonomous wireless detection scheme that considers multiple distinguishable physical (PHY)-layer settings for real-time identification of wireless technologies for real-time applications. Specifically, the proposed scheme relies on the PHY-layer measurements of the targeted spectrum. Transmission settings, such as bandwidth, carrier frequency, and RSSI are estimated from the raw in-phase and quadrature-phase (I/Q) measurements. In addition, a symbol-level extraction scheme is implemented to extract unique features of modulation settings. These aforementioned features are applied to a machine learning process to identify the received wireless technologies. Compared with raw I/Q measurements, the extracted features are much simplified and, thus, the machine learning classifier can be designed with a simple structure for fast processing on IoT nodes. Finally, the proposed schemes are primarily evaluated theoretically, followed by implementing them on a USRP software-defined radio (SDR)-based hardware testbed. The evaluation results demonstrate high accuracy in the real-time detection of different wireless technologies for seamless IoT applications.

42 ENGINEERING↗
DOE OSTI2022

Transmission Electron Microscopy Study on the Effect of Thermal and Electrical Stimuli on Ge2Te3 Based Memristor Devices

Memristor devices fabricated using the chalcogenide Ge 2 Te 3 phase change thin films in a metal-insulator-metal structure are characterized using thermal and electrical stimuli in this study. Once the thermal and electrical stimuli are applied, cross-sectional transmission electron microscopy (TEM) and X-ray energy-dispersive spectroscopy (XEDS) analyses are performed to determine structural and compositional changes in the devices. Electrical measurements on these devices showed a need for increasing compliance current between cycles to initiate switching from low resistance state (LRS) to high resistance state (HRS). The measured resistance in HRS also exhibited a steady decrease with increase in the compliance current. High resolution TEM studies on devices in HRS showed the presence of residual crystalline phase at the top-electrode/dielectric interface, which may explain the observed dependence on compliance current. XEDS study revealed diffusion related processes at dielectric-electrode interface characterized, by the separation of Ge 2 Te 3 into Ge- and Te- enriched interfacial layers. This was also accompanied by spikes in O level at these regions. Furthermore, in-situ heating experiments on as-grown thin films revealed a deleterious effect of Ti adhesive layer, wherein the in-diffusion of Ti leads to further degradation of the dielectric layer. This experimental physics-based study shows that the large HRS/LRS ratio below the current compliance limit of 1 mA and the ability to control the HRS and LRS by varying the compliance current are attractive for memristor and neuromorphic computing applications.

Shallcross, Austin↗
NASA NTRS2006

Tunable Microstrip Filters Using Selectively Etched Ferroelectric Thin-Film Varactors for Coupling

We report on the use of patterned ferroelectric films to fabricate proof of concept tunable one-pole microstrip filters with excellent transmission and mismatch/reflection properties at frequencies up to 24 GHz. By controlling the electric field distribution within the coupling region between the resonator and input/output lines, sufficiently high loaded and unloaded Q values are maintained so as to be useful for microstrip filter design, with low mismatch loss. In the 23 - 24 GHz region, the filter was tunable over a 100 MHz range, the loaded and unloaded Q values were 29 and 68, respectively, and the reflection losses were below -16 dB, which demonstrates the suitability of these films for practical microwave applications.

Mueller, Carl H.↗
NASA NTRS2003

Performance Enhancement of Tunable Bandpass Filters Using Selective Etched Ferroelectric Thin Films

The inclusion of voltage-tunable barium strontium titanate (BSTO) thin films into planar band pass filters offers tremendous potential to increase their versatility. The ability to tune the passband so as to correct for minor deviations in manufacturing tolerances, or to completely reconfigure the operating frequencies of a microwave communication system, are highly sought-after goals. However, use of ferroelectric films in these devices results in higher dielectric losses, which in turn increase the insertion loss and decrease the quality factors of the filters. This study explores the use of patterned ferroelectric layers to minimize dielectric losses without degrading tunability. Patterning the ferroelectric layers enables us to constrict the width of the ferroelectric layers between the coupled microstrip lines, and minimize losses due to ferroelectric layers. Coupled one-pole microstrip bandpass filters with fundamental resonances at approx. 7.2 GHz and well defined harmonic resonances at approx. 14.4 and approx. 21.6 GHz, were designed, simulated and tested. For one of the filters, experimental results verified that its center frequency was tunable by 528 MHz at a center frequency of 21.957 GHz, with insertion losses varying from 4.3 to 2.5 dB, at 0 and 3.5 V/micron, respectively. These data demonstrate that the tuning-to-loss figure of merit of tunable microstrip filters can be greatly improved using patterned ferroelectric thin films as the tuning element, and tuning can be controlled by engineering the ferroelectric constriction in the coupled sections.

Miranda, Felix A.↗
NASA NTRS2001

Fixed-frequency and Frequency-agile (au, HTS) Microstrip Bandstop Filters for L-band Applications

In this work, we report on the performance of a highly selective, compact 1.83 x 2.08 cm(exp 2) (approx. 0.72 x 0.82 in(exp 2) microstrip line bandstop filter of YBa2CU3O(7-delta) (YBCO) on LaAlO3 (LAO) substrate. The filter is designed for a center frequency of 1.623 GHz for a bandwidth at 3 dB from reference baseline of less than 5.15 MHz, and a bandstop rejection of 30 dB or better. The design and optimization of the filter was performed using Zeland's IE3D circuit simulator. The optimized design was used to fabricate gold (Au) and High-Temperature Superconductor (HTS) versions of the filter. We have also studied an electronically tunable version of the same filter. Tunability of the bandstop characteristics is achieved by the integration of a thin film conductor (Au or HTS) and the nonlinear dielectric ferroelectric SrTiO3 in a conductor/ferroelectric/dielectric modified microstrip configuration. The performance of these filters and comparison with the simulated data will be presented.

Saenz, Eileen M.↗
NASA NTRS2001

Effect of Selectively Etched Ferroelectric Thin-Film Layer on the Performance of a Tunable Bandpass Filter

The main purpose of this work is to study the effect of a selectively etched ferroelectric thin film layer on the performance of an electrically tunable filter. An X-band tunable filter was designed, fabricated and tested on a selectively etched Barium Strontium Titanate (BSTO) ferroelectric thin film layer. Tunable filters with varying lengths of BSTO thin-film in the input and output coupling gaps were modeled, as well as experimentally tested. Experimental results showed that filters with coupling gaps partially filled with BSTO maintained frequency tunability and improved the insertion loss by approx. 2dB. To the best of our knowledge, these results represent the first experimental demonstration of the advantages of selective etching in the performance of thin film ferroelectric-based tunable microwave components.

Subramanyam, Guru↗
NASA NTRS2000

Correlation of Electric Field and Critical Design Parameters for Ferroelectric Tunable Microwave Filters

The correlation of electric field and critical design parameters such as the insertion loss, frequency ability return loss, and bandwidth of conductor/ferroelectric/dielectric microstrip tunable K-band microwave filters is discussed in this work. This work is based primarily on barium strontium titanate (BSTO) ferroelectric thin film based tunable microstrip filters for room temperature applications. Two new parameters which we believe will simplify the evaluation of ferroelectric thin films for tunable microwave filters, are defined. The first of these, called the sensitivity parameter, is defined as the incremental change in center frequency with incremental change in maximum applied electric field (EPEAK) in the filter. The other, the loss parameter, is defined as the incremental or decremental change in insertion loss of the filter with incremental change in maximum applied electric field. At room temperature, the Au/BSTO/LAO microstrip filters exhibited a sensitivity parameter value between 15 and 5 MHz/cm/kV. The loss parameter varied for different bias configurations used for electrically tuning the filter. The loss parameter varied from 0.05 to 0.01 dB/cm/kV at room temperature.

Subramanyam, Guru↗
NASA NTRS2000

Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications: Modeling Examples and Experimental Verification

The application of thin ferroelectric films for frequency and phase agile components is the topic of interest of many research groups worldwide. Consequently, proof-of-concepts (POC) of different tunable microwave components using either (HTS, metal)/ferroelectric thin film/dielectric heterostructures or (thick, thin) film "flip-chip" technology have been reported. Either as ferroelectric thin film characterization tools or from the point of view of circuit implementation approach, both configurations have their respective advantages and limitations. However, we believe that because of the progress made so far using the heterostructure (i.e., multilayer) approach, and due to its intrinsic features such as planar configuration and monolithic integration, a study on the correlation of circuit geometry aspects and ferroelectric material properties could accelerate the insertion of this technology into working systems. In this paper, we will discuss our study performed on circuits based on microstrip lines at frequencies above 10 GHz, where the multilayer configuration offers greater ease of insertion due to circuit's size reduction. Modeled results of relevant circuit parameters such as the characteristic impedance, effective dielectric constant, and attenuation as a function of ferroelectric film's dielectric constant, tans, and thickness, will be presented for SrTiO3 and Ba(x)Sr(1-x)TiO3 ferroelectric films. A comparison between the modeled and experimental data for some of these parameters will be presented.

Miranda, Felix A.↗
NASA NTRS1998

A K-band Frequency Agile Microstrip Bandpass Filter using a Thin Film HTS/Ferroelectric/dielectric Multilayer Configuration

We report on YBa2Cu3O(7-delta) (YBCO) thin film/SrTiO3 (STO) thin film K-band tunable bandpass filters on LaAlO3 (LAO) dielectric substrates. The 2 pole filter has a center frequency of 19 GHz and a 4% bandwidth. Tunability is achieved through the non-linear dc electric field dependence of the relative dielectric constant of STO(epsilon(sub rSTO). A large tunability ((Delta)f/f(sub 0) = (f(sub Vmax) - f(sub 0)/f(sub 0), where f(sub 0) is the center frequency of the filter at no bias and f(sub Vmax) is the center frequency of the filter at the maximum applied bias) of greater than 10% was obtained in YBCO/STO/LAO microstrip bandpass filters operating below 77 K. A center frequency shift of 2.3 GHz (i.e., a tunability factor of approximately 15%) was obtained at a 400 V bipolar dc bias, and 30 K, with minimal degradation in the insertion loss of the filter. This paper addresses design, fabrication and testing of tunable filters based on STO ferroelectric thin films. The performance of the YBCO/STO/LAO filters is compared to that of gold/STO/LAO counterparts.

Subramanyam, Guru↗