Engineering topics

Swanson, R. M.

Publications and source records attributed to Swanson, R. M..

4 records

NASA NTRS1986

Measurement of minority carrier lifetime, mobility and diffusion length in heavily doped silicon

Carrier transport and recombination parameters in heavily doped silicon were examined. Data were presented for carrier diffusivity in both p- and n-type heavily doped silicon covering a broad range of doping concentrations from 10 to the 15th power to 10 to the 20th power atoms/cu cm. One of the highlights of the results showed that minority carrier diffusivities are higher by a factor of 2 in silicon compared to majority carrier diffusivities.

Swirhun, S. E.↗

NASA NTRS1986

Point contact silicon solar cells

The construction of a 22.2% efficient single-crystal silicon solar cell fabricated at Stanford University is described. The cell dimensions were 3 x 5 mm and 100 microns thick with a base lifetime of 500 microseconds. The cell featured light trapping between a texturized top surface and a reflective bottom surface, small point contact diffusions, alternating between n-type and p-type in a polka-dot pattern on the bottom surface, and a surface passivation on all surfaces between contact regions.

Swanson, R. M.↗

NASA NTRS1985

Measurement of minority carrier transport parameters in heavily doped n-type silicon

Measurement of minority transport parameters in heavily doped silicon is covered. The basic transport equations were used to define two independent parameters. Use of special vertical and lateral transistor test devices permitted the measurement of both parameters. Prior studies were normalized to show excellent agreement over the heavy doping region.

Delalamo, J.↗

NASA NTRS1985

High Lifetime Solar Cell Processing and Design

In order to maximize efficiency a solar cell must: (1) absorb as much light as possible in electron-hole production, (2) transport as large a fraction as possible of the electrons to the n-type terminal and holes to the p-type terminal without their first recombining, and (3) produce as high as possible terminal voltage. Step (1) is largely fixed by the spectrum of sunlight and the fundamental absorption characteristics of silicon, although some improvements are possible through texturizing induced light trapping and back surface reflectors. Steps (2) and (3) are, however, dependent on the recombination mechanisms of the cell. The recombination, on the contrary, is strongly influenced by cell processing and design. Some of the lessons during the development of point-contact-cell are discussed. Cell dependence on recombination, surface recombination, and contact recombination are discussed. Results show the overwhelming influence of contact recombination on the operation of the cell when the other sources of recombination are reduced by careful processing.

Swanson, R. M.↗