Engineering topics

Szofran, Frank R.

Publications and source records attributed to Szofran, Frank R..

18 records

NASA NTRS2003

Reduction of Defects in Germanium-Silicon

Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in the crystals. In addition to float-zone processing, detached Bridgman growth, although not a completely crucible-free method, is a promising tool to improve crystal quality. It does not suffer from the size limitations of float zoning and the impact of thermocapillary convection on heat and mass transport is expected to be negligible. Detached growth has been observed frequently during g experiments. Considerable improvements in crystalline quality have been reported for these cases. However, neither a thorough understanding of the process nor a quantitative assessment of the quality of these improvements exists. This project will determine the means to reproducibly grow GeSi alloys in a detached mode and seeks to compare processing-induced defects in Bridgman, detached-Bridgman, and floating-zone growth configurations in GeSi crystals (Si less than or equal to 10 at%) up to 20mm in diameter. Specific objectives include: measurement of the relevant material parameters such as contact angle, growth angle, surface tension, and wetting behavior of the GeSi-melt on potential crucible materials; determination of the mechanism of detached growth including the role of convection; quantitative determination of the differences in defects and impurities for crystals grown using normal Bridgman, detached Bridgman, and floating zone (FZ) methods; investigation of the influence of a defined flow imposed by a rotating magnetic field on the characteristics of detached growth; control of time-dependent Marangoni convection in the case of FZ growth by the use of a rotating magnetic field to examine the influence on the curvature of the solid-liquid interface and the heat and mass transport; and growth of benchmark quality GeSi-single crystals.

Szofran, Frank R.↗

NASA NTRS2002

Effects of a Rotating Magnetic Field on Gas Transport During Detached Crystal Growth in Space

During the detached Bridgman growth of semiconductor crystals, the melt has a short free surface which is detached from the ampoule wall near the crystal-melt interface, thus eliminating the crystal defects caused by contact with the ampoule wall. Recent modelling has indicated that initiation and continuation of detached growth depends on the rate of transport of dissolved gas from the crystal-melt interface, where gas is rejected into the melt, to the detached free surface, where evaporating gas maintains the pressure on the free surface. Here we use numerical modelling to investigate whether the application of a rotating magnetic field increases or decreases the transport of rejected gas to the detached free surface. Unfortunately the results show that a rotating magnetic field almost always decreases the evaporation rate at the detached free surface. The exception is an insignificant increase for a short period at the beginning of crystal growth for a few circumstances. The evaporation rate decreases as the strength of the rotating magnetic field is increased.

Walker, John S.↗

NASA NTRS2001

Reduction of Defects in Germanium-Silicon

Szofran, Frank R.↗

NASA NTRS2000

Melt Motion Due to Peltier Marking During Bridgman Crystal Growth with an Axial Magnetic Field

This paper treats a liquid-metal flow inside an electrically insulating cylinder with electrically conducting solids above and below the liquid region. There is a uniform axial magnetic field, and there is an electric current through the liquid and both solids. Since the lower liquid-solid interface is concave into the solid and since the liquid is a better electrical conductor than the adjacent solid, the electric current is locally concentrated near the centerline. The return to a uniform current distribution involves a radial electric current which interacts with the axial magnetic field to drive an azimuthal flow. The axial variation of the centrifugal force due to the azimuthal velocity drives a meridional circulation with radial and axial velocities. This problem models the effects of Peltier marking during the vertical Bridgman growth of semiconductor crystals with an externally applied magnetic field, where the meridional circulation due to the Peltier Current may produce important mixing in the molten semiconductor.

Sellers, C. C.↗

NASA NTRS2000

Thermoelectric Magnetohydrodynamic Flow During Crystal Growth with a Moderate or Weak Magnetic Field

This paper treats a steady, axisymmetric melt motion in a cylindrical ampoule with a uniform, axial magnetic field and with an electric current due to a radial temperature variation along the crystal-melt interface, where the values of the absolute thermoelectric power for the crystal and melt are different. The radial component of the thermoelectric current in the melt produces an azimuthal body force, and the axial variation of the centrifugal force due to the azimuthal motion drives a meridional circulation with radial and axial velocities. For moderate magnetic field strengths, the azimuthal velocity and magnetic field produce a radial induced electric field which partially cancels the Seebeck electromotive force in the melt, so that the thermoelectric current and the melt motion are coupled. For weak magnetic fields, the thermoelectric current is decoupled from the melt motion, which is an ordinary hydrodynamic flow driven by a known azimuthal body force. The results show how the flow varies with the strength of the magnetic field and with the magnitude of the temperature variation along the crystal-melt interface. They also define the parameter ranges for which the simpler weak-field decoupled analysis gives accurate predictions.

Khine, Y. Y.↗

NASA NTRS1999

Exploiting the Temperature/Concentration Dependence of Magnetic Susceptibility to Control Convection in Fundamental Studies of Solidification Phenomena

The objective of this new research project is to demonstrate by experiment, supplemented by mathematical modeling and physical property measurement, that the effects of buoyancy driven convection can be largely eliminated in ground-based experiments, and further reduced in flight, by applying a new technique. That technique exploits the dependence of magnetic susceptibility on composition or temperature. It is emphasized at the outset that the phenomenon to be exploited is fundamentally and practically different from the magnetic damping of convection in conducting liquids that has been the subject of much prior research. The concept suggesting this research is that all materials, even non-conductors, when placed in a magnetic field gradient, experience a force. Of particular interest here are paramagnetic and diamagnetic materials, classes which embrace the "model alloys", such as succinonitrile-acetone, that have been used by others investigating the fundamentals of solidification. Such alloys will exhibit a dependence of susceptibility on composition. The consequence is that, with a properly oriented field (gradient) a force will arise that can be made to be equal to, but opposite, the buoyancy force arising from concentration (or temperature) gradients. In this way convection can be stilled. The role of convection in determining the microstructure, and thereby properties, of materials is well known. Elimination of that convection has both scientific and technological consequences. Our knowledge of diffusive phenomena in solidification, phenomena normally hidden by the dominance of convection, is enhanced if we can study solidification of quiescent liquids. Furthermore, the microstructure, microchemistry and properties of materials (thereby practical value) are affected by the convection occurring during their solidification. Hitherto the method of choice for elimination of convection has been experimentation in microgravity. However, even in low Earth orbit, residual convection has effects. That residual convection arises from acceleration (drag on the spacecraft), displacement from the center of mass or transients in the gravitational field (g-jitter). There is therefore a need for both further reducing buoyancy driven flow in flight and allowing the simulation of microgravity during ground based experiments. Previous investigations, the research project description, theory behind the study and experimental methods as well as plots of magnetic fields and forces are presented.

Evans, J. W.↗

NASA NTRS1999

Melt Stabilization of PbSnTe in a Magnetic Field

Both the experimental observation and numerical simulation indicate that the Bridgman growth of PbSnTe under the microgravity environment in space is still greatly influenced by buoyancy-induced convection. The application of a magnetic field during the semiconductor growth can dampen the convective flow in the metal-like melt. However, for Bridgman growth of PbSnTe on earth (with either vertical or horizontal configuration), both experimental observation and numerical modeling suggest that even with a strong magnetic furnace (5-Tesla constant axial magnetic field), the convective flow in the melt still cannot be sufficiently suppressed to reach the diffusion-controlled level. In order to completely dampen the buoyancy-induced convection on earth, estimates based on scaling analysis indicate that for common experimental conditions, an extremely high magnetic field is required, far beyond the capacity of the experimental apparatus currently available. Therefore, it is proposed that only the combination of microgravity environment and magnetic damping will produce the desired diffusion-controlled growth state for this particular material. The primary objectives of this study are to provide a quantitative understanding of the complex transport phenomena during solidification of non-dilute binarys, to furnish a numerical tool for furnace design and growth condition optimization, to provide estimates of the required magnetic field strength for low gravity growth, and to assess the role of magnetic damping for space and earth control of the double-diffusive convection. As an integral part of a NASA research program, our numerical simulation supports both the flight and ground-based experiments in an effort to bring together a complete picture of the complex physical phenomena involved in the crystal growth process. For Bridgman growth of PbSnTe under microgravity (with both vertical and horizontal configurations), the simulations suggest that a moderate axial magnetic field of only a few kilo-Gauss in strength could effectively eliminate buoyancy-induced convection in the melt and control solute segregation. Therefore, this work confirms the idea that the combination of microgravity environment and the magnetic damping will indeed be sufficient to produce the desired diffusion-controlled growth state for PbSnTe.

Fripp, Archibald L.↗

NASA NTRS1999

Crystal Growth of II-VI Semiconducting Alloys by Directional Solidification

This research study is investigating the effects of a microgravity environment during the crystal growth of selected II-VI semiconducting alloys on their compositional, metallurgical, electrical and optical properties. The on-going work includes both Bridgman-Stockbarger and solvent growth methods, as well as growth in a magnetic field. The materials investigated are II-VI, Hg(1-x)Zn(x)Te, and Hg(1-x)Zn(x)Se, where x is between 0 and 1 inclusive, with particular emphasis on x-values appropriate for infrared detection and imaging in the 5 to 30 micron wavelength region. Wide separation between the liquidus and solidus of the phase diagrams with consequent segregation during solidification and problems associated with the high volatility of one of the components (Hg), make the preparation of homogeneous, high-quality, bulk crystals of the alloys an extremely difficult nearly an impossible task in a gravitational environment. The three-fold objectives of the on-going investigation are as follows: (1) To determine the relative contributions of gravitationally-driven fluid flows to the compositional redistribution observed during the unidirectional crystal growth of selected semiconducting solid solution alloys having large separation between the liquidus and solidus of the constitutional phase diagram; (2) To ascertain the potential role of irregular fluid flows and hydrostatic pressure effects in generation of extended crystal defects and second-phase inclusions in the crystals; and, (3) To obtain a limited amount of "high quality" materials needed for bulk crystal property characterizations and for the fabrication of various device structures needed to establish ultimate material performance limits. The flight portion of the study was to be accomplished by performing growth experiments using the Crystal Growth Furnace (CGF) manifested to fly on various Spacelab missions.

Lehoczky, Sandor L.↗

NASA NTRS1999

Growth of Solid Solution Single Crystals

The objective of the study is to establish the effects of processing semiconducting, solid solution, single crystals in a microgravity environment on the metallurgical, compositional, electrical, and optical characteristics of the crystals. The alloy system being investigated is the solid solution semiconductor Hg(1-x)Cd(x)Te, with x-values appropriate for infrared detector applications in the 8 to 14 mm wavelength region. Both melt and Te-solvent growth are being performed. The study consists of an extensive ground-based experimental and theoretical research effort followed by flight experimentation where appropriate. The ground-based portion of the investigation also includes the evaluation of the relative effectiveness of stabilizing techniques, such as applied magnetic fields, for suppressing convective flow during the melt growth of the crystals.

Lehoczky, Sandor L.↗

NASA NTRS1999

Reduction of Defects in Germanium-Silicon

It is well established that crystals grown without contact with a container have far superior quality to otherwise similar crystals grown in direct contact with a container. In addition to float-zone processing, detached-Bridgman growth is often cited as a promising tool to improve crystal quality, without the limitations of float zoning. Detached growth has been found to occur quite often during microgravity experiments and considerable improvements of crystal quality have been reported for those cases. However, no thorough understanding of the process or quantitative assessment of the quality improvements exists so far. This project will determine the means to reproducibly grow Ge-Si alloys in the detached mode. Specific objectives include: (1) measurement of the relevant material parameters such as contact angle, growth angle, surface tension, and wetting behavior of the GeSi-melt on potential crucible materials; (2) determination of the mechanism of detached growth including the role of convection; (3) quantitative determination of the differences of defects and impurities among normal Bridgman, detached Bridgman, and floating zone (FZ) growth; (4) investigation of the influence of defined azimuthal or meridional flow due to rotating magnetic fields on the characteristics of detached growth; (5) control time-dependent Marangoni convection in the case of FZ-growth by the use of a rotating magnetic field to examine the influence on the curvature of the solid-liquid interface and the heat and mass transport; and (6) grow high quality GeSi-single crystals with Si-concentration up to 10 at% and diameters up to 20 mm.

Szofran, Frank R.↗

NASA NTRS1999

Magnetic Damping of Solid Solution Semiconductor Alloys

The objective of this study is to: (1) experimentally test the validity of the modeling predictions applicable to the magnetic damping of convective flows in electrically conductive melts as this applies to the bulk growth of solid solution semiconducting materials; and (2) assess the effectiveness of steady magnetic fields in reducing the fluid flows occurring in these materials during processing. To achieve the objectives of this investigation, we are carrying out a comprehensive program in the Bridgman and floating-zone configurations using the solid solution alloy system Ge-Si. This alloy system has been studied extensively in environments that have not simultaneously included both low gravity and an applied magnetic field. Also, all compositions have a high electrical conductivity, and the materials parameters permit reasonable growth rates. An important supporting investigation is determining the role, if any, that thermoelectromagnetic convection (TEMC) plays during growth of these materials in a magnetic field. TEMC has significant implications for the deployment of a Magnetic Damping Furnace in space. This effect will be especially important in solid solutions where the growth interface is, in general, neither isothermal nor isoconcentrational. It could be important in single melting point materials, also, if faceting takes place producing a non-isothermal interface. In conclusion, magnetic fields up to 5 Tesla are sufficient to eliminate time-dependent convection in silicon floating zones and possibly Bridgman growth of Ge-Si alloys. In both cases, steady convection appears to be more significant for mass transport than diffusion, even at 5 Tesla in the geometries used here. These results are corroborated in both growth configurations by calculations.

Szofran, Frank R.↗

NASA NTRS1999

Reducing and Inducing Convection in Ge-Si Melts with Static Magnetic Field

Results of a study of the effectiveness of using static magnetic fields to reduce convection in Ge-Si melts will be presented. Lenz's law causes a retardation of convection when a static magnetic field is applied to an electrically conducting liquid. However, during the solidification of a solid-solution system such as Ge-Si, the interface is neither isothermal nor isoconcentrational. The variation of temperature and chemical composition along the interface causes thermoelectric currents to be generated within the solidifying material (and the container if it is electrically conductive). These currents, in the presence of a magnetic field, can cause movement (stirring, convection) in the melt which can exceed convection induced by normal thermosolutal mechanisms. Crystals have been grown by both the Bridgman and floating-zone methods. Clear evidence for the existence of this thermoelectromagnetic convection, especially in the case of Si floating-zone growth, will be presented.

Szofran, Frank R.↗

NASA NTRS1998

Magnetic Damping of Solid Solution Semiconductor Alloys

The objective of this study is to conduct the Earth-based research sufficient to successfully propose a flight experiment (1) to experimentally test the validity of the modeling predictions applicable to the magnetic damping of convective flows in conductive melts as this applies to the bulk growth of solid solution semiconducting materials in the reduced gravitational levels available in low Earth orbit and (2) to assess the effectiveness of steady magnetic fields in reducing the fluid flows occurring in these materials during space processing. To achieve the objectives of this investigation, we are carrying out a comprehensive program in the Bridgman and floating-zone configurations using the solid solution alloy system Ge-Si. This alloy system was chosen because it has been studied extensively in environments that have not simultaneously included both low gravity and an applied magnetic field. Also, all compositions have a high electrical conductivity, and the materials parameters permit high growth rates compared to many other commonly studied alloy semiconductors. An important supporting investigation is determining the role, if any, that thermoelectromagnetic convection (TEMC) plays during growth of these materials in a magnetic field. Some compositional anomalies observed by us in magnetic grown crystals can only be explained by TEMC; this has significant implications for the deployment of a Magnetic Damping Furnace in space. This effect will be especially important in solid solutions where the growth interface is, in general, neither isothermal nor isoconcentrational. It could be important in single melting point materials, also, if faceting takes place producing a non-isothermal interface.

Szofran, Frank R.↗

NASA NTRS1998

Directional Solidification of Mercury Cadmium Telluride in Microgravity

Mercury cadmium telluride (MCT) has been directionally solidified for ten days in the Advanced Automated Directional Solidification Furnace (AADSF) on the second United States Microgravity Payload Mission (USMP-2). A second growth experiment is planned for the USMP-4 mission in November 1997. Results from USMP-2 demonstrated significant changes between microgravity and ground-based experiments, particularly in the compositional homogeneity. Changes were also observed during the microgravity mission which were dependent on the attitude of the space shuttle and the relative magnitudes of axial and transverse residual accelerations with respect to the growth axis of the crystal. Issues of shuttle operation, especially those concerned with safety and navigation, and the science needs of other payloads dictated the need for changes in attitude. One consequence for solidification of MCT in the USMP4 mission is the desire for a shorter growth time to complete the experiment without subjecting the sample to shuttle maneuvers. By using a seeded technique and a pre-processed boule of MCT with an established diffusion layer quenched into the solid, equilibrium steady state growth can be established within 24 hours, rather than the three days needed in USMP-2. The growth of MCT in AADSF during the USMP-4 mission has been planned to take less than 72 hours with 48 hours of actual growth time. A review of the USMP-2 results will be presented, and the rationale for the USMP-4 explained. Pre-mission ground based tests for the USN4P-4 mission will be presented, as will any available preliminary flight results from the mission.

Lechoczhy, Sandor L.↗

NASA NTRS1998

Reduction of Defects in Germanium-Silicon

It is well established that crystals grown without contact with a container have far superior quality to otherwise similar crystals grown in direct contact with a container. In addition to float- zone processing, detached-Bridgman growth is often cited as a promising tool to improve crystal quality, without the limitations of float zoning. Detached growth has been found to occur quite often during micro-g experiments and considerable improvements of crystal quality have been reported for those cases. However, no thorough understanding of the process or quantitative assessment of the quality improvements exists so far. This project will determine the means to reproducibly grow Ge-Si alloys in the detached mode. Specific objectives include: (1) measurement of the relevant material parameters such as contact angle, growth angle, surface tension, and wetting behavior of the GeSi-melt on potential crucible materials; (2) determination of the mechanism of detached growth including the role of convection; (3) quantitative determination of the differences of defects and impurities among normal Bridgman, detached Bridgman, and Floating Zone (FZ) growth; (4) investigation of the influence of defined azimuthal or meridional flow due to rotating magnetic fields on the characteristics of detached growth; (5) control time-dependent Marangoni convection in the case of FZ-growth by the use of a rotating magnetic field to examine the influence on the curvature of the solid-liquid interface and the heat and mass transport; and (6) grow high quality GeSi-single crystals with Si-concentration up to 10 at% and diameters up to 20 mm.

Szofran, Frank R.↗

NASA NTRS1996

NASA Microgravity Materials Science Conference

The Microgravity Materials Science Conference was held June 10-11, 1996 at the Von Braun Civic Center in Huntsville, AL. It was organized by the Microgravity Materials Science Discipline Working Group, sponsored by the Microgravity Science and Applications Division at NASA Headquarters, and hosted by the NASA Marshall Space Flight Center and the Alliance for Microgravity Materials Science and Applications (AMMSA). It was the second NASA conference of this type in the microgravity materials science discipline. The microgravity science program sponsored approximately 80 investigations and 69 principal investigators in FY96, all of whom made oral or poster presentations at this conference. The conference's purpose was to inform the materials science community of research opportunities in reduced gravity in preparation for a NASA Research Announcement (NRA) scheduled for release in late 1996 by the Microgravity Science and Applications Division at NASA Headquarters. The conference was aimed at materials science researchers from academia, industry, and government. A tour of the MSFC microgravity research facilities was held on June 12, 1996. This volume is comprised of the research reports submitted by the principal investigators after the conference and presentations made by various NASA microgravity science managers.

Szofran, Frank R.↗

NASA NTRS1993

Bulk Growth of 2-6 Crystals in the Microgravity Environment of USML-1

The first United States Microgravity Laboratory Mission (USML- 1) flew in June 1992 on the Space Shuttle Columbia. An important part of this SpaceLab mission was the debut of the Crystal Growth Furnace (CGF). Of the seven samples grown in the furnace, three were bulk grown 2-6 compounds, two of a cadmium zinc telluride alloy, and one of a mercury zinc telluride alloy. Ground based results are presented, together with the results of computer simulated growths of these experimental conditions. Preliminary characterization results for the three USML-1 growth runs are also presented and the flight sample characteristics are compared to the equivalent ground truth samples. Of particular interest are the effect of the containment vessel on surface features, and especially on the nucleation, and the effect of the gravity vector on radial and axial compositional variations and stress and defect levels.

Gillies, Donald C.↗

NASA NTRS1989

Method of preparing radially homogeneous mercury cadmium telluride crystals

Hg(1-x)Cd(x)Te is prepared in an improved directional solidification method in which a precast alloy sample containing predetermined amounts of Hg, Cd, and Te is disposed in a sealed ampule and a furnace providing two controlled temperature zones is translated upward past the ampule to provide melting and resolidification. The present improvement is directed to maintaining the zones at temperatures determined in accordance with a prescribed formula providing a thermal barrier between the zones with a maximum thickness and translating the furnace past the zones at a rate less the 0.31 micron/sec.

Lehoczky, Sandor L.↗