Engineering topics

Tamboli, Adele C. (ORCID:0000000328399634)

Publications and source records attributed to Tamboli, Adele C. (ORCID:0000000328399634).

9 records

DOE OSTI2022

Transition metal impurities in silicon: computational search for a semiconductor qubit

Abstract Semiconductors offer a promising platform for physical implementation of qubits, but their broad adoption is presently hindered by limited scalability and/or very low operating temperatures. Learning from the nitrogen-vacancy centers in diamond, our goal is to find equivalent optically active point defect centers in crystalline silicon, which could be advantageous for their scalability and integration with classical devices. Transition metal (TM) impurities in silicon are common paramagnetic deep defects, but a comprehensive theoretical study of the whole 3 d series that considers generalized Koopmans’ condition is missing. We apply the HSE06(+U) method to examine their potential as optically active spin qubits and identify seven TM impurities that have optically allowed triplet–triplet transitions within the silicon band gap. These results provide the first step toward silicon-based qubits with higher operating temperatures for quantum sensing. Additionally, these point defects could lead to spin-photon interfaces in silicon-based qubits and devices for mid-infrared free-space communications.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Subcell Coupling in Tandem Solar Cells: Measurements and Modeling

Closely stacking two or more photovoltaic (PV) subcells together to form tandem solar cells inevitably results in subcell coupling that is important to understand. Here we describe how this coupling can be modeled and characterized for two-, three-, and four-terminal tandems (hereafter 2T, 3T or 4T).

2T↗

DOE OSTI2022

Short-Range Order Tunes Optical Properties in Long-Range Disordered ZnSnN2-ZnO Alloy

Local site ordering offers a new paradigm for property control in functional materials. However, systems that exhibit a propensity for local order and global disorder are often challenging to characterize, and demonstrations of ordering-induced property tuning are few and far between. Here, we demonstrate that short-range ordering tunes the optical absorption edge in the long-range disordered alloy system (ZnSnN2)1-x(ZnO)2x at x = 0.25. We use combinatorial cosputtering to synthesize a set of thin-film samples spanning this alloy space. X-ray diffraction demonstrates lattice contraction as a function of alloy composition, confirming that a mixed-anion and -cation alloy has been synthesized. Using N and O K-edge X-ray absorption near-edge structure in conjunction with simulations of cation-disordered supercell structures, we find that samples exhibit octet-rule-breaking motifs around both anions. Upon annealing at an alloy composition of x = 0.25, X-ray absorption analysis suggests that local motif structure shifts toward octet-rule-conserving while long-range disorder is maintained. Spectroscopic ellipsometry reveals that local ordering increases the absorption edge energy at constant composition. Additionally, alloy-induced optical absorption edge tuning is demonstrated. This work paves the way toward property tuning with short-range ordering in (ZnSnN2)1-x(ZnO)2x and beyond.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Fabrication of Quasi-Random Photonic Crystals for Ultrathin Solar Cells

Quasi-random structures for light management present an intermediate ordering between a completely random rough surface and a perfect ordered photonic crystal. They are attractive for broadband applications due to their power spectral density. This makes them excellent candidates for photovoltaic applications. Here we present preliminary fabrication results creating quasi-random structures using a self-assembly approach based on polymer blends and wet etching. We are able to create patterns with average lattice constant of five to two microns. This structure is proposed to be used as a rear patterning layer for ultrathin GaAs cells for better sustainability and radiation- hard devices.

41 EE - Solar Energy Technologies Office (EE-4S)↗

DOE OSTI2021

Fabrication, Measurement, and Modeling of GaInP/GaAs Three-Terminal Cells and Strings

Three-terminal (3T) GaInP/GaAs solar cells are fabricated from inverted-grown monolithic tandems and processed with external metal contacts suitable for easy interconnection. Prototype 3T tandems both with and without tunnel junctions are demonstrated. They are characterized as a function of two independent variables in a variety of configurations, with each configuration holding one of the contacts common to two source-meter units (SMUs). Each of these different measurement configurations completely characterizes the device by transforming the results into 6 unique device parameters and plotting the total power parametrically in two dimensions. The performance is fit using a 3T optoelectronic model that includes luminescent coupling as well as important resistances. Eight of these devices are interconnected in various voltage-constrained configurations to form voltage-matched (VM) strings. Measurement and analysis of these III-V devices and strings are generally applicable to all 3T photovoltaics.

photovoltaics↗

DOE OSTI2021

Compensated Contacts for Three-Terminal Transistor Solar Cells

The heterojunction bipolar transistor solar cell (HBTSC) is an alternative to conventional double-junction solar cells that combines the advantages of three-terminal architectures with a compact design. A critical part of the HBTSC fabrication is the implementation of the middle contact, the one associated to the base layer in the transistor structure, because this layer can be damaged by the diffusion of metallic species during contact annealing. As a solution we propose to implement a "compensated contact", that is, to leave a thin (< 200 nm) portion of emitter or collector between the base layer and the contact metals and compensate its doping during contact annealing. Using an Au/Zn/Au metal structure to compensate a 150 nm thick portion of the collector, we obtain a specific contact resistance ~8 10-4 ..omega.. cm2. This value is fairly invariant for annealing temperatures between 400 and 460 degrees C and annealing times between 2 and 5 minutes, and it does not improve by adding Pd to the metallic stack. Optimizing the compensated contact technology opens the path to the realization of III-V-material-based HBTSCs with open-circuit voltages and fill factors comparable to those of conventional multijunction architectures.

contact resistance↗

DOE OSTI2021

Stringing Monolithic Three Terminal III-V Tandems

Tandemdevicesarewellknowntosurpasssinglejunctions.However,thelimitationsofcurrent-matchingisaconcern for changing spectra in terrestrial applications. Three terminal tandem (3T) devices can be more robust to these variations resulting in higher energy yield than single junction devices and two terminal series-connected tandems. We fabricate one-sun 3T tandem devices made of inverted grown III-V tandem (GaInP/t/GaAs) as a prototype of 3T tandems for stringing and measurement demon- strations. We demonstrate 3T tandem measurements that can be used to understand the use of 3T tandems in various constrained configurations. We have demonstrated the improvement of unconstrained 3T tandem cells over 2T series-connected cells as the illumination changes. We present initial results for micro-module with up to 8 3T tandem devices to be strung together.

3T↗

DOE OSTI2021

Fundamentals of Three-Terminal Tandem Solar Cells: a Comprehensive Taxonomy

Three-terminal tandem (3TT) solar cells can overcome some of the limitations of two- and four-terminal tandem designs. However, the coupled nature of the cells adds a degree of complexity to the devices themselves and the ways that their performance can be measured and reported. To facilitate understanding, we have developed a taxonomy which encompasses all types of 3TT devices, enabling a common nomenclature for discussing devices and performance. Once the physical devices, contact nodes, and loading circuitry have been self-consistently described, it becomes apparent that a wide range of 3TT devices share a common set of design and operating principles.

3T↗

DOE OSTI2021

Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

Here we present the experimental results of an inverted three-terminal heterojunction bipolar transistor solar cell (HBTSC) made of GaInP/GaAs. The inverted growth and processing enables contacting the intermediate layer from the bottom, which increases the cell performance by reducing shadow factor and series resistance at the same time. With this prototype we show that an inverted processing of a three-terminal solar cell is feasible and pave the way for the application of epitaxial lift-off, substrate reuse and mechanical stacking to the HBTSC which can eventually lead to a low-cost high-efficiency III-V-on-Si HBTSC technology.

41 EE - Solar Energy Technologies Office (EE-4S)↗