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Tanner, M.

Publications and source records attributed to Tanner, M..

4 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Evidence that Ultra-high-energy Gamma Rays Are a Universal Feature near Powerful Pulsars

The highest-energy known gamma-ray sources are all located within 0°5 of extremely powerful pulsars. This raises the question of whether ultra-high-energy (UHE; >56 TeV) gamma-ray emission is a universal feature expected near pulsars with a high spin-down power. Using four years of data from the High Altitude Water Cherenkov Gamma-Ray Observatory, we present a joint-likelihood analysis of 10 extremely powerful pulsars to search for subthreshold UHE gamma-ray emission correlated with these locations. We report a significant detection (>3σ), indicating that UHE gamma-ray emission is a generic feature of powerful pulsars. Finally, we discuss the emission mechanisms of the gamma rays and the implications of this result. The individual environment, such as the magnetic field and particle density in the surrounding area, appears to play a role in the amount of emission.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2020

Constraints on Lorentz Invariance Violation from HAWC Observations of Gamma Rays above 100 TeV

Because of the high energies and long distances to the sources, astrophysical observations provide a unique opportunity to test possible signatures of Lorentz invariance violation (LIV). Superluminal LIV enables the decay of photons at high energy. The high altitude water Cherenkov (HAWC) observatory is among the most sensitive gamma-ray instruments currently operating above 10 TeV. HAWC finds evidence of 100 TeV photon emission from at least four astrophysical sources. These observations exclude, for the strongest of the limits set, the LIV energy scale to 2.2 × 10 31 eV , over 1800 times the Planck energy and an improvement of 1 to 2 orders of magnitude over previous limits.

79 ASTRONOMY AND ASTROPHYSICS↗
NASA NTRS1993

Characterization of Si (sub X)Ge (sub 1-x)/Si Heterostructures for Device Applications Using Spectroscopic Ellipsometry

Spectroscopic ellipsometry (SE) characterization of several complex Si (sub X)Ge (sub 1-x)/Si heterostructures prepared for device fabrication, including structures for heterojunction bipolar transistors (HBT), p-type and n-type heterostructure modulation doped field effect transistors, has been performed. We have shown that SE can simultaneously determine all active layer thicknesses, Si (sub X)Ge (sub 1-x) compositions, and the oxide overlayer thickness, with only a general knowledge of the structure topology needed a priori. The characterization of HBT material included the SE analysis of a Si (sub X)Ge (sub 1-x) layer deeply buried (600 nanometers) under the silicon emitter and cap layers. In the SE analysis of n-type heterostructures, we examined for the first time a silicon layer under tensile strain. We found that an excellent fit can be obtained using optical constants of unstrained silicon to represent the strained silicon conduction layer. We also used SE to measure lateral sample homogeneity, providing quantitative identification of the inhomogeneous layer. Surface overlayers resulting from prior sample processing were also detected and measured quantitatively. These results should allow SE to be used extensively as a non-destructive means of characterizing Si (sub X)Ge (sub 1-x)/Si heterostructures prior to device fabrication and testing.

Sieg, R. M.↗