Silver cementation mechanism for leaching silicon solar cells in nitric acid
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Engineering topics
Publications and source records attributed to Tao, Meng.
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Precious and scarce silver (Ag) is used as a front electrical contact in silicon solar panels. With massive amounts of solar panel waste coming to end-of-life, it is imperative to recover all the Ag from these modules. In this paper, we propose a novel method to easily reclaim Ag from end-of-life silicon solar cells using low concentration sulfuric acid (H 2 SO 4 ) leaching followed by ultrasonication. Our process simplifies the Ag recycling procedure by directly recovering the Ag contacts from solar cells, eliminating the need for secondary precipitation/electrodeposition. First, scanning electron microscopy (SEM) with energy dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS) was used to study the leaching and ultrasonication process on rejected solar wafers. Next, a solar panel from landfill was heated in a furnace to burn off the polymer encapsulant. The silicon wafers were then collected from the burning process and leached in 2 M H 2 SO 4 at two different shaking speeds for 48 hours at room temperature. Finally, the end-of-life silicon wafer pieces were collected, sonicated in water, and then the sonication water was centrifuged to show a proof-of-concept to recover the Ag contacts. Inductively coupled plasma optical emission spectroscopy (ICPOES) is used to monitor dissolved elements in the leachate as a function of time and shaking speed. XPS is used to evaluate the composition of the silicon cell wafer surface before and after H 2 SO 4 leaching. SEM is used to image the recovered Ag contacts morphology and EDX confirms the recovered particles contain high amounts of Ag. Furthermore, a proposed schematic illustrates the authors’ hypothesis for the peeling mechanism.
Electroplating of aluminum may be utilized to form electrodes for solar cells. In contrast to expensive silver electrodes, aluminum allows for reduced cell cost and addresses the problem of material scarcity. In contrast to copper electrodes which typically require barrier layers, aluminum allows for simplified cell structures and fabrication steps. In the solar cells, point contacts may be utilized in the backside electrodes for increased efficiency. Solar cells formed in accordance with the present disclosure enable large-scale and cost-effective deployment of solar photovoltaic systems.
It is imperative to recover lead (Pb) contained in end-of-life solar modules. In this paper, a two-step leaching and electrowinning process using acetic acid is investigated for Pb recovery. Acetic acid with hydrogen peroxide can dissolve Pb quickly and, under some conditions, in a matter of minutes. Pb electrowinning has been successfully demonstrated from aqueous solutions of 0.009 M lead(II) acetate with 0–10% v/v acetic acid. Pb-containing deposits are found on both the copper cathode and graphite anode. X-ray diffraction, energy-dispersive X-ray spectroscopy, and Fourier transform infrared spectroscopy confirm the presence of metallic Pb and Pb(II) oxide (PbO) co-deposits on the cathode. Further, there is also the formation of lead subacetate on the cathode under certain conditions. On the anode, the deposit consists of lead(IV) oxide and superoxide (PbO 2 and Pb 1–x O 2 ). A Pb recovery rate of 99% is achieved in 0.009 M lead(II) acetate solutions with 10% v/v acetic acid by applying a reduction potential of either –0.8 V or –1.0 V versus the silver/silver chloride reference electrode for 24h. Pb leaching with acetic acid is also demonstrated from milled silicon solar modules.
A method to repair laser-induced phosphorus loss from the n-type emitter of Si solar cells during light-induced Al plating is demonstrated. The ability to add a water-reactive phosphorus compound, PCl 5 , into the Al plating bath gives a unique advantage to Al over Cu for front contacts on Si solar cells. The contact resistivity between light-induced Al and Si emitter is reduced to as low as 0.1 mΩ-cm 2 . Cyclic voltammetry performed on a plating bath composed of 81 wt% 1-ethyl-3-methylimidazolium tetrachloroaluminate, 19 wt% AlCl 3 , and 0.2 wt% PCl 5 reveals multiple reduction reactions of PCl 5 , although incomplete decomposition of PCl 5 is possible. A decrease in nucleation loop size during cyclic voltammetry is also observed suggesting that PCl 5 , while being consumed, modifies the growth mechanism during Al plating. Structural analysis confirms that the addition of PCl 5 produces an Al film which is levelized and compact. Here, a pulsed voltage profile coupled with chemical analysis verifies that phosphorus incorporation is electrolytically activated and is likely the cause for the low contact resistivity.