Engineering topics
Taylor, Aidan A.
Publications and source records attributed to Taylor, Aidan A..
Defect filtering for thermal expansion induced dislocations in III–V lasers on silicon
Epitaxially integrated III–V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect-tolerant InAs quantum dot (QD)-based lasers. Despite being below the critical thickness, QD layers in these devices contain previously unexplained misfit dislocations, which facilitate non-radiative recombination. We demonstrate here that these misfit dislocations form during post-growth cooldown due to the combined effects of (1) thermal-expansion mismatch between the III–V layers and silicon and (2) mechanical hardening in the active region. By incorporating an additional sub-critical thickness, indium-alloyed “misfit dislocation trapping layer,” we leverage these mechanical hardening effects to our advantage, displacing 95% of misfit dislocations from the QD layer in model structures. Unlike conventional dislocation mitigation strategies, the trapping layer reduces neither the number of threading dislocations nor the number of misfit dislocations. It simply shifts the position of misfit dislocations away from the QD layer, reducing the defects' impact on luminescence. In full lasers, adding a misfit dislocation trapping layer both above and below the QD active region displaces misfit dislocations and substantially improves performance: we measure a twofold reduction in lasing threshold currents and a greater than threefold increase in output power. Overall, our results suggest that devices employing both traditional threading dislocation reduction techniques and optimized misfit dislocation trapping layers may finally lead to fully integrated, commercially viable silicon-based photonic integrated circuits.
Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon
Here, we analyze the structure of dislocations in electrically aged InAs quantum dot (QD) lasers on silicon to understand gradual device degradation. We find that misfit dislocations lengthen due to carrier injection, experiencing a combination of recombination-enhanced climb and glide processes constrained by the epitaxial structure. An examination of the dislocation geometry reveals that the climb process involves the addition of atoms to the extra half plane of the dislocation. Spontaneous emission from the QDs is also dimmer after aging. Additionally, the signature of misfit dislocations in the unaged laser, discernible as sharp dark lines in spatially resolved cathodoluminescence, is replaced by finer, more inhomogeneous contrast upon aging. We speculate that this change arises from vacancy clouds expelled from the dislocation during climb. With this insight, we evaluate the driving forces for dislocation climb that could be at play and discuss the origins of slow degradation in QD lasers.