Spectral and temporal characteristics of AlGaAs/GaAs superlattice p-i-n photodetectors
Measurements of the spectral and the temporal response of AlGaAs/GaAs p-i-n photodetectors with superlattice intrinsic regions grown by molecular beam epitaxy are reported. The feasibility for high-speed applications is demonstrated by a time constant limited impulse response of 200 ps (full width at half-maximum) when excited near the band edge with 100 ps optical pulses. The theory-predicted and recently verified voltage tunability of the band edge with clearly resolved excitonic resonances was observed. The responsivity was measured to be 0.2 A/W.