Engineering topics

Thind, Arashdeep Singh

Publications and source records attributed to Thind, Arashdeep Singh.

3 records

DOE OSTI2024

Coherent Erbium Spin Defects in Colloidal Nanocrystal Hosts

We demonstrate nearly a microsecond of spin coherence in Er 3+ ions doped in cerium dioxide nanocrystal hosts, despite a large gyromagnetic ratio and nanometric proximity of the spin defect to the nanocrystal surface. The long spin coherence is enabled by reducing the dopant density below the instantaneous diffusion limit in a nuclear spin-free host material, reaching the limit of a single erbium spin defect per nanocrystal. We observe a large Orbach energy in a highly symmetric cubic site, further protecting the coherence in a qubit that would otherwise rapidly decohere. Spatially correlated electron spectroscopy measurements reveal the presence of Ce 3+ at the nanocrystal surface, which likely acts as extraneous paramagnetic spin noise. Even with these factors, defect-embedded nanocrystal hosts show tremendous promise for quantum sensing and quantum communication applications, with multiple avenues, including core-shell fabrication, redox tuning of oxygen vacancies, and organic surfactant modification, available to further enhance their spin coherence and functionality in the future.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2023

Domain-wall magnetoelectric coupling in multiferroic hexagonal YbFeO 3 films

Electrical modulation of magnetic states in single-phase multiferroic materials, using domain-wall magnetoelectric (ME) coupling, can be enhanced substantially by controlling the population density of the ferroelectric (FE) domain walls during polarization switching. In this work, we investigate the domain-wall ME coupling in multiferroic h-YbFeO 3 thin films, in which the FE domain walls induce clamped antiferromagnetic (AFM) domain walls with reduced magnetization magnitude. Simulation according to the phenomenological theory indicates that the domain-wall ME effect is dramatically enhanced when the separation between the FE domain walls shrinks below the characteristic width of the clamped AFM domain walls during the ferroelectric switching. Experimentally, we show that while the magnetization magnitude remains same for both the positive and the negative saturation polarization states, there is evidence of magnetization reduction at the coercive voltages. These results suggest that the domain-wall ME effect is viable for electrical control of magnetization.

42 ENGINEERING↗

DOE OSTI2023

Solid state reduction of nickelate thin films

The square-planar nickelates are a class of superconductors analogous to the cuprates and promise to provide insight into the pairing mechanism in high-temperature superconducting oxides. The parent phase of doped superconducting films is NdNiO 2 , which is prepared by reducing 3 + Ni in NdNiO 3 films. In this paper, we develop an ultrahigh vacuum reduction method using aluminum deposited on top of the 3 + nickelates and monitor the reduction process in real time through in situ crystal truncation rod measurements and diffraction x-ray absorption near edge spectroscopy measurements across the Ni K edge. Further, we establish a relation between Ni valence and the lattice constant of NdNiO 3-x and show that the process can precisely control the oxygen content in the films. Finally, we extend the reduction process to quintuple square-planar nickelates.

36 MATERIALS SCIENCE↗