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Thome, Lionel

Publications and source records attributed to Thome, Lionel.

How relative defect migration energies drive contrasting temperature-dependent microstructural evolution in irradiated ceramics

Ceramic materials have become widely used in various fields of material science, and ceramic oxides such as cubic zirconia (c- ZrO 2 ) and magnesia (MgO) are candidate materials for nuclear energy applications. For the corresponding in-service conditions of these materials, there is a crucial need in studies at moderate or high temperatures of the physical phenomena underlying the damage buildup under irradiation. Here in the present work, we show, using x-ray diffraction, that these two materials exhibit a similar damage accumulation process under ion irradiation at fixed temperature. However, they display an unexpected opposite damaging rate to changes in the irradiation temperature. In fact, as the temperature is increased, the final damage state is reached earlier in c- ZrO 2 while it is delayed in MgO. Rate equation cluster dynamics simulations show that defect clustering is favored over defect recombination in c- ZrO 2 , but the situation is reversed for MgO, explaining the observed opposite response to temperature of the two materials. This contrasting behavior can be rationalized in terms of nonequivalent interstitial versus vacancy defect migration energies in MgO. We finally demonstrate that these results allow for a qualitative prediction of the evolution of the experimental irradiation-induced disorder with temperature, henceforth potentially reducing the cost in selecting and developing ad hoc materials.

36 MATERIALS SCIENCE↗

The role of electronic energy loss in ion beam modification of materials

The interaction of energetic ions with solids results in energy loss to both atomic nuclei and electrons in the solid. In this article, recent advances in understanding and modeling the additive and competitive effects of nuclear and electronic energy loss on the response of materials to ion irradiation are reviewed. Experimental methods and large-scale atomistic simulations are used to study the separate and combined effects of nuclear and electronic energy loss on ion beam modification of materials. The results demonstrate that nuclear and electronic energy loss can lead to additive effects on irradiation damage production in some materials; while in other materials, the competitive effects of electronic energy loss leads to recovery of damage induced by elastic collision cascades. Lastly, these results have significant implications for ion beam modification of materials, non-thermal recovery of ion implantation damage, and the response of materials to extreme radiation environments.

36 MATERIALS SCIENCE↗

Effect of combined local variations in elastic and inelastic energy losses on the morphology of tracks in ion-irradiated materials

A judicious choice of irradiation parameters and experimental methodology allowed the visualization of the tracks created by swift heavy ions in pyrochlores over the entire ion trajectories. Several peculiarities were observed: a layered structure of tracks composed of an amorphous core surrounded by a strained crystalline envelope, a change of the track diameter as a function of the ion slowing down, a loss of parallelism of tracks, a transformation from continuous to discontinuous regime, and an increasing contribution of elastic collisions at large depths. These observations are compared to the respective amount of electronic and nuclear energy losses.

Correlation↗

Combined effects of nuclear and electronic energy losses in solids irradiated with a dual-ion beam

Single and dual-beam irradiations of oxide (c-ZrO{sub 2}, MgO, Gd{sub 2}Ti{sub 2}O{sub 7}) and carbide (SiC) single crystals were performed to study combined effects of nuclear (S{sub n}) and electronic (S{sub e}) energy losses. Rutherford backscattering experiments in channeling conditions show that the S{sub n}/S{sub e} cooperation induces a strong decrease of the irradiation-induced damage in SiC and MgO and almost no effects in c-ZrO{sub 2} and Gd{sub 2}Ti{sub 2}O{sub 7}. The healing process is ascribed to electronic excitations arising from the electronic energy loss of swift ions. These results present a strong interest for both fundamental understanding of the ion-solid interactions and technological applications in the nuclear industry where expected cooperative S{sub n}/S{sub e} effects may lead to the preservation of the integrity of nuclear devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

HRTEM study of track evolution in 120-MeV U irradiated Gd2Ti2O7

High resolution Scanning Transmission Electron Microscopy (HRTEM) experiments were performed on Gd2Ti2O7 pyrochlores irradiated with 120-MeV U ions. A judicious choice of irradiation energy, sample preparation (using Focused Ion Beam) and analytical technique (HRTEM) allowed us to visualize the complete evolution of tracks from the surface of samples down to depths exceeding the projected range of irradiating ions. Such features as variation of track diameters, changes in track directions and discontinuous segments of tracks were clearly documented at various depths. By using two different STEM imaging modes: High- and Low-Angle Annular Dark Field imaging (HAADF and LAADF), it was possible to observe the layered structure of tracks composed of an amorphous core surrounded by a strained crystalline envelope.

120↗

Monte Carlo simulations of channeling spectra recorded for samples containing complex defects

The main aim of the present paper is to describe the current status of the development of McChasy, a Monte Carlo simulation code, to make it suitable for the analysis of dislocations and dislocation loops in crystals. Such factors like the shape of the bent channel and geometrical distortions of the crystalline structure in the vicinity of dislocation has been discussed. Several examples of the analysis performed at different energies of analyzing ions are presented. The results obtained demonstrate that the new procedure applied to the spectra recorded on crystals containing dislocation yields damage profiles which are independent of the energy of the analyzing beam.

Carlo↗

Investigation of irradiation effects induced by self-ion in 6H-SiC combining RBS/C, Raman and XRD

Single crystals of 6H-SiC were irradiated at room temperature and 670 K with 4 MeV C ions at two fluences: 1015 and 1016 cm2 (0.16 and 1.6 dpa at the damage peak). Damage accumulation was studied by a combination of X-ray diffraction (XRD), Raman spectroscopy and Rutherford backscattering spectrometry in channelling geometry (RBS/C) along the [0001] direction. The irradiated layer is found to be composed of a low damage region up to 1.5 lm followed by a region where the disorder level is higher, consistent with SRIM predictions. At room temperature and low fluence, typically 1015 cm2, the strain depth profile follows the dpa depth distribution (with a maximum value of 2%). The disorder is most likely due to small defect clusters. When increasing the fluence up to 1016 cm2, a buried amorphous layer forms, as indicated by e.g. Raman results where the Si C bands become broader or even disappear. At a higher irradiation temperature of 670 K, amorphization is not observed at the same fluence, revealing a dynamic annealing process. However, results tend to suggest that the irradiated layer is highly heterogeneous and composed of different types of defects.

99 GENERAL AND MISCELLANEOUS↗

Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals

The healing effect of intense electronic energy deposition arising during swift heavy ion (SHI) irradiation is demonstrated in the case of 3C-SiC damaged by nuclear energy deposition. Experimental (ion channeling experiments) and computational (molecular dynamics simulations) studies provide consistent indications of disorder decrease after SHI irradiation. Furthermore, both methods establish that SHI-induced recrystallization takes place at amorphous-crystalline interfaces. The recovery process is unambiguously accounted for by the thermal spike phenomenon.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗

Irradiation damage in Gd{sub 2}Ti{sub 2}O{sub 7} single crystals: Ballistic versus ionization processes

The structural transformations induced in Gd{sub 2}Ti{sub 2}O{sub 7} single crystals irradiated at high energies (870-MeV Xe), where ionization processes (electronic stopping) dominate, and at low energies (4-MeV Au), where ballistic processes (nuclear stopping) dominate, have been studied via the combination of Rutherford backscattering spectrometry and channeling (RBS/C), Raman spectroscopy, and transmission electron microscopy (TEM) experiments. At high energy, amorphization occurs directly in individual ion tracks from the extreme electronic-energy deposition, and full amorphization results from the overlapping of these tracks as described by a direct impact model. The track diameters lie in the range 6-9 nm. At low energy, amorphization occurs via indirect processes, driven by ballistic nuclear energy deposition from the ions, that is accounted for in the framework of both direct-impact/defect-stimulated and multi-step damage accumulation models. The ion fluence for total amorphization of the irradiated layer is much higher at low energy (0.5 ion nm{sup -2}) than at high energy (0.05 ion nm{sup -2}), consistent with the nuclear stopping at low energy (5.2 keV/nm) compared to the electronic stopping at high energy (29 keV/nm).

36 MATERIALS SCIENCE↗

Damage evolution in Au-implanted Ho2Ti2O7 titanate pyrochlore

Damage evolution at room temperature in Ho2Ti2O7 single crystals is studied under 1 MeV Au2+ ion irradiation by Rutherford backscattering spectroscopy along the <001> direction. For a better determination of ion-induced disorder profile, an iterative procedure and a Monte Carlo code (McChasy) were used to analyze ion channeling spectra. A disorder accumulation model, with contributions from the amorphous fraction and the crystalline disorder, is fit to the Ho damage accumulation data. The damage evolution behavior indicates that the relative disorder on the Ho sublattice follows a nonlinear dependence on dose and that defect-stimulated amorphization is the primary amorphization mechanism. Similar irradiation behavior previously was observed in Sm2Ti2O7. A slower damage accumulation rate for Ho2Ti2O7, as compared with damage evolution in Sm2Ti2O7, is mainly attributed to a lower effective cross section for defect-simulated amorphization.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗