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Tian, Hao

Publications and source records attributed to Tian, Hao.

Resistive switching properties of monolayer h-BN atomristors with different electrodes

Resistive switching properties based on molecular beam epitaxy-grown monolayer hexagonal boron nitride (h-BN) atomristors are studied by using metal insulator metal configurations with different electrode materials. Au/monolayer h-BN/Ni devices demonstrate a forming-free bipolar resistive switching (BRS) behavior, a good endurance with up to 97 cycles at a high compliance current of 100 mA, an average on/off ratio of 10 3 , and a low set/reset voltage variability. Metal/monolayer h-BN/graphite/Co devices exhibit self-compliant current BRS characteristics. Both metal/h-BN/Ni and metal/h-BN/graphite/Co devices show the coexistence of BRS, unipolar resistive switching (URS), and nonvolatile threshold switching (TH) modes. The formation of conductive filaments is attributed to the diffusion and trapping of metal ions on the defect sites driven by the electric field, while the rupture is driven by the electric field in BRS and by Joule heating in URS and TH modes.

74 ATOMIC AND MOLECULAR PHYSICS↗

LAMOST Time-Domain survey: first results of four K2 plates

From Oct. 2019 to Apr. 2020, LAMOST performed a time-domain (TD) spectroscopic survey of four K2 plates with both low- and medium-resolution observations. The low-resolution spectroscopic survey acquired 282 exposures ( ≈ 46.6 h) over 25 nights, yielding a total of about 767 000 spectra, and the medium-resolution survey took 177 exposures ( ≈ 49.1 h) over 27 nights, collecting about 478 000 spectra. More than 70%/50% of low-resolution/medium-resolution spectra have signal-to-noise ratio higher than 10. We determine stellar parameters (e.g., T eff , log g, [Fe/H]) and radial velocity (RV) with different methods, including LASP, DD-Payne and SLAM. In general, these parameter estimations from different methods show good agreement, and the stellar parameter values are consistent with those of APOGEE. We use the Gaia DR2 RV values to calculate a median RV zero point (RVZP) for each spectrograph exposure by exposure, and the RVZP-corrected RVs agree well with the APOGEE data. The stellar evolutionary and spectroscopic masses are estimated based on the stellar parameters, multi-band magnitudes, distances and extinction values. Finally, we construct a binary catalog including about 2700 candidates by analyzing their light curves, fitting the RV data, calculating the binarity parameters from medium-resolution spectra and cross-matching the spatially resolved binary catalog from Gaia EDR3. In conclusion, the LAMOST TD survey is expected to represent a breakthrough in various scientific topics, such as binary systems, stellar activity, stellar pulsation, etc.

79 ASTRONOMY AND ASTROPHYSICS↗

High-temperature, spectrally-selective, scalable, and flexible thin-film Si absorber and emitter

Solar thermal technologies have great potential to provide low-cost storage for solar energy. However, their efficiencies are limited by a lack of scalable, mechanically flexible, durable, yet highly-efficient spectrally-selective solar absorbers suitable for high temperatures at low solar concentrations. Here, we overcome these challenges by fabricating a scalable free-standing spectrally-selective thin-film Si absorber and emitter (SSTFS) composite. Its high-temperature emittance shows strong spectral selectivity, even at 595 °C. Thermal stability is proven by measuring optical properties before and after thermal cycling equivalent to one day of concentrated sunlight. Despite the use of crystalline Si, the fabricated SSTFS composite exhibits exceptional mechanical flexibility to cover most surface geometries. The SSTFS composite demonstrates the potential of high-temperature, efficient and flexible solar absorbers and thermal emitters to advance renewable solar energy with storage.

36 MATERIALS SCIENCE↗

Growth Dynamics of Millimeter-Sized Single-Crystal Hexagonal Boron Nitride Monolayers on Secondary Recrystallized Ni (100) Substrates

The outstanding physical properties of 2D materials have sparked continuous research interest in exploiting these materials for next-generation high-performance electronic and photonic technology. Scalable synthesis of high-quality large-area 2D hexagonal boron nitride (h-BN) is a crucial step toward the ultimate success of many of these applications. In this work, a synthetic approach in which secondary recrystallized Ni (100) substrates underwent a carburization process, followed by the growth of h-BN in a molecular beam epitaxy system is designed. The h-BN growth dynamics is studied by tuning different growth parameters including the substrate temperature, and the boron and nitrogen source flux ratio. With assistance from density functional theory calculations, the role of interstitial C atoms in promoting h-BN growth by enhancing the catalytic effect of the transition metal, which lowers the nucleation activation energy barrier, is rationalized. Furthermore, through the control of the growth parameters, a single-crystal h-BN monolayer domain as large as 1.4 mm in edge length is achieved. In addition, a high-quality, continuous, large-area h-BN single-layer film with a breakdown electric field of 9.75 MV cm -1 is demonstrated. The high value of the breakdown electric field suggests that single-layer h-BN has extraordinary dielectric strength for high-performance 2D electronics applications.

2D↗

Electric-Field Control of Magnetization, Jahn-Teller Distortion, and Orbital Ordering in Ferroelectric Ferromagnets

Controlling the direction of the magnetization by an electric field in multiferroics that are both ferroelectric and strongly ferromagnetic will open the door to the design of the next generation of spintronics and memory devices. Using first-principles simulations, we report that the discovery that the PbTiO 3 /LaTiO 3 (PTO/LTO) superlattice possesses such highly desired control, as evidenced by the electric-field-induced rotation of 90° and even a possible full reversal of its magnetization in some cases. Moreover, such systems also exhibit Jahn-Teller distortions, as well as orbital orderings, that are switchable by the electric field, therefore making PTO/LTO of importance for the tuning of electronic properties too. Here, the origin for such striking electric-field controls of magnetization, Jahn-Teller deformations, and orbital orderings resides in the existence of three different types of energetic coupling: one coupling polarization with antiphase and in-phase oxygen octahedral tiltings, a second one coupling polarization with antiphase oxygen octahedra tilting and Jahn-Teller distortions, and finally a biquadratic coupling between antiphase oxygen octahedral tilting and magnetization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗