Engineering topics

Tolman, C. H.

Publications and source records attributed to Tolman, C. H..

4 records

NASA NTRS1985

Self-structured, current aperture approach for bubble memory

An approach to magnetic bubble memory which incorporates dual conductor current access drive with a self-structured (strongly interacting) bubble lattice is described. This is expected to provide higher operating speeds, defect tolerance, and higher bit density for a given bubble size as compared to present field access bubble devices. Bubble spacings of 2.5 bubble diameters are projected for a prototype device. Experimental work on device components including detectors, major/minor loops, and gates is described. Defect tolerance has also been demonstrated.

Nelson, G. L.↗

NASA NTRS1982

Investigation of multilayer magnetic domain lattice file

A theoretical and experimental investigation determined that current accessed self structured bubble memory devices have the potential of meeting projected data density and speed requirements. Device concepts analyzed include multilayer ferrimagnetic devices where the top layer contains a domain structure which defines the data location and the second contains the data. Current aperture and permalloy assisted current propagation devices were evaluated. Based on the result of this work more detailed device research was initiated. Detailed theoretical and experimental studies indicate that the difference in strip and threshold between a single bubble in the control layer and a double bubble which would exist in both the control layer and data layer is adequate to allow for detection of data. Detailed detector designs were investigated.

Torok, E. J.↗

NASA NTRS1980

Investigation of multilayer magnetic domain lattice file

The feasibility of the self structured multilayered bubble domain memory as a mass memory medium for satellite applications is examined. Theoretical considerations of multilayer bubble supporting materials are presented, in addition to the experimental evaluation of current accessed circuitry for various memory functions. The design, fabrication, and test of four device designs is described, and a recommended memory storage area configuration is presented. Memory functions which were demonstrated include the current accessed propagation of bubble domains and stripe domains, pinning of stripe domain ends, generation of single and double bubbles, generation of arrays of coexisting strip and bubble domains in a single garnet layer, and demonstration of different values of the strip out field for single and double bubbles indicating adequate margins for data detection. All functions necessary to develop a multilayer self structured bubble memory device were demonstrated in individual experiments.

Torok, E. J.↗

NASA NTRS1980

A current access, self-structured, multilayered bubble domain memory

Preliminary experimental results are reported on a self-structured, multilayer bubble memory with buried data layer. Stripe domains are used to move carrier bubbles by magnetostatic coupling. An expression is derived for that coupling as a function of thickness of the GGG separation layer. Experimental values of coupling are given as a function of bias field. An expression for stripe curvature as a function of bias field is derived. The performance of seven different current access stripe propagation circuits is reported.

Stermer, R. L., Jr.↗