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Tomko, John A.

Publications and source records attributed to Tomko, John A..

6 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Ion irradiation induced crystalline disorder accelerates interfacial phonon conversion and reduces thermal boundary resistance

Traditional understanding of the thermal boundary resistance (TBR) across solid-solid interfaces posits that the vibrational densities of states overlap between materials dictates interfacial energy transport, with phonon scattering occurring at the interface. Using atomistic simulations, we show a mechanism for control of TBR; point defects near an interface can lead to both short- and midrange disorder, accelerating the conversion of vibrational energy between bulk and interfacial modes, ultimately reducing the TBR. In conclusion, we experimentally demonstrate this reduction through ion irradiation of gallium nitride and subsequently measuring the TBR across Al/GaN interfaces.

Pfeifer, Thomas W.↗
DOE OSTI2023

Interface-independent sound speed and thermal conductivity of atomic-layer-deposition-grown amorphous AlN / Al 2 O 3 multilayers with varying oxygen composition

Dielectric amorphous multilayers (AMLs) play a critical role in a wide array of technologies such as optical coatings, nanoelectronics, energy harvesting, and recovery devices. However, despite their wide applications, a robust understanding of the effect of the interplay between chemical and structural disorder on the thermal properties of AMLs is still lacking. Therefore, in this paper, we experimentally and numerically investigate the effects of composition and interface density on the sound speed and thermal conductivity of a series of amorphous aluminum nitride and aluminum oxide multilayers grown via plasma-enhanced atomic layer deposition. To systematically change the composition, the oxygen content of the AMLs is proportionally varied with interface density during growth. We find that the longitudinal sound speed of these AMLs is dictated by the oxygen content instead of the number of interfaces. The thermal conductivity, in contrast, is dictated by both interface density and oxygen content. The interfaces act to decrease the thermal conductivity, whereas the oxygen content increases the thermal conductivity. Due to the competing influence of the interfaces and oxygen content, the thermal conductivity of the AMLs remains nearly constant as a function of interface density. Furthermore, our study provides crucial insights into the effect of the interplay of composition and interfaces on the sound speed and thermal conductivity of AMLs.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Measuring sub-surface spatially varying thermal conductivity of silicon implanted with krypton

The thermal properties of semiconductors following exposure to ion irradiation are of great interest for the cooling of electronic devices; however, gradients in composition and structure due to irradiation often make the measurement difficult. Furthermore, the nature of spatial variations in thermal resistances due to spatially varying ion irradiation damage is not well understood. In this work, we develop an advancement in the analysis of time-domain thermoreflectance to account for spatially varying thermal conductivity in a material resulting from a spatial distribution of defects. We then use this method to measure the near-surface (≲1 μm) thermal conductivity of silicon wafers irradiated with Kr + ions, which has an approximate Gaussian distribution centered 260 nm into the sample. Our numerical analysis presented here allows for the spatial gradient of thermal conductivity to be extracted via what is fundamentally a volumetric measurement technique. We validate our findings via transmission electron microscopy, which is able to confirm the spatial variation of the sub-surface silicon structure, and provide additional insight into the local structure resulting from the effects of ion bombardment. Thermal measurements found the ion stopping region to have a nearly 50x reduction in thermal conductivity as compared to pristine silicon, while TEM showed the region was not fully amorphized. Our results suggest this drastic reduction in silicon thermal conductivity is primarily driven by structural defects in crystalline regions along with boundary scattering between amorphous and crystalline regions, with a negligible contribution being due to implanted krypton ions themselves.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Observation of solid-state bidirectional thermal conductivity switching in antiferroelectric lead zirconate (PbZrO 3 )

Materials with tunable thermal properties enable on-demand control of temperature and heat flow, which is an integral component in the development of solid-state refrigeration, energy scavenging, and thermal circuits. Although gap-based and liquid-based thermal switches that work on the basis of mechanical movements have been an effective approach to control the flow of heat in the devices, their complex mechanisms impose considerable costs in latency, expense, and power consumption. As a consequence, materials that have multiple solid-state phases with distinct thermal properties are appealing for thermal management due to their simplicity, fast switching, and compactness. Thus, an ideal thermal switch should operate near or above room temperature, have a simple trigger mechanism, and offer a quick and large on/off switching ratio. In this study, we experimentally demonstrate that manipulating phonon scattering rates can switch the thermal conductivity of antiferroelectric PbZrO 3 bidirectionally by –10% and +25% upon applying electrical and thermal excitation, respectively. Our approach takes advantage of two separate phase transformations in PbZrO 3 that alter the phonon scattering rate in different manners. In this study, we demonstrate that PbZrO 3 can serve as a fast (<1 second), repeatable, simple trigger, and reliable thermal switch with a net switching ratio of nearly 38% from ~1.20 to ~1.65 W m –1 K –1 .

25 ENERGY STORAGE↗
DOE OSTI2022

Emergent interface vibrational structure of oxide superlattices

As the length scales of materials decrease, the heterogeneities associated with interfaces become almost as important as the surrounding materials. This has led to extensive studies of emergent electronic and magnetic interface properties in superlattices. However, the interfacial vibrations that affect the phonon-mediated properties, such as thermal conductivity, are measured using macroscopic techniques that lack spatial resolution. Although it is accepted that intrinsic phonons change near boundaries, the physical mechanisms and length scales through which interfacial effects influence materials remain unclear. Here we demonstrate the localized vibrational response of interfaces in strontium titanate–calcium titanate superlattices by combining advanced scanning transmission electron microscopy imaging and spectroscopy, density functional theory calculations and ultrafast optical spectroscopy. Structurally diffuse interfaces that bridge the bounding materials are observed and this local structure creates phonon modes that determine the global response of the superlattice once the spacing of the interfaces approaches the phonon spatial extent. Our results provide direct visualization of the progression of the local atomic structure and interface vibrations as they come to determine the vibrational response of an entire superlattice. Direct observation of such local atomic and vibrational phenomena demonstrates that their spatial extent needs to be quantified to understand macroscopic behaviour. Tailoring interfaces, and knowing their local vibrational response, provides a means of pursuing designer solids with emergent infrared and thermal responses.

36 MATERIALS SCIENCE↗