Search NASA⌕ Search

Engineering topics

Tonigan, Andrew M.

Publications and source records attributed to Tonigan, Andrew M..

8 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Radiation characterization summary for the WSMR fast burst reactor environment at the 6-inch location

The characterization of the neutron, prompt gamma-ray, and delayed gamma-ray radiation fields for the White Sands Missile Range (WSMR) Fast Burst Reactor, also known as molybdenum-alloy Godiva (Molly-G) has been assessed at the 6-inch irradiation location. The neutron energy spectra, uncertainties, and common radiation metrics are presented. Code-dependent recommended constants are given to facilitate the conversion of various dosimetry readings into radiation metrics desired by experimenters. The Molly-G core was designed and configured similarly to Godiva II, as an unreflected, unmoderated, cylindrical annulus of uranium-molybdenum-alloy fuel with molybdenum loading of 10%. At the 6-inch position, the axial fluence maximum is about 2.4×10 13 n/cm 2 per MJ of reactor energy; about 0.1% of the neutron fluence is below 1 keV and 96% is above 100 keV. The 1-MeV Damage-Equivalent Silicon (DES) fluence is estimated at 2.2×10 13 n/cm 2 per MJ of reactor energy. The prompt gamma-ray dose is roughly 2.5E+03 rad(Si) per MJ and the delayed gamma-ray dose is about 1.3E+03 rad(Si) per MJ.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2022

Radiation Characterization Summary: WSMR Fast Burst Reactor Environment at the 6-Inch and 24-Inch Irradiation Locations

This document presents the facility-recommended characterization of the neutron, prompt gamma-ray, and delayed gamma-ray radiation fields for the White Sands Missile Range (WSMR) Fast Burst Reactor, also known as molybdenum-alloy Godiva (Molly-G), at the 6-inch and the 24-inch irradiation locations. The neutron, prompt gamma-ray, and delayed gamma-ray energy spectra, uncertainties, and covariance matrices are presented. Code dependent recommended constants are given to facilitate the conversion of various dosimetry readings into radiation metrics desired by experimenters. Representative pulse operations are presented with conversion examples.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

The energy distributions of electrons in gate-all-around (GAA) Si MOSFETs are analyzed using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with experimental current–voltage characteristics. For these 24-nm gate length devices, the electron distribution features a smeared energy peak with an extended tail. This extension of the tail results primarily from the Coulomb scattering within the channel. A fraction of electrons that enter the drain retains their energy, resulting in an out-of-equilibrium distribution in the drain region. The simulated density and average energy of the hot electrons correlate well with experimentally observed device degradation. We propose that the interaction of high-energy electrons with hydrogen-passivated phosphorus dopant complexes within the drain may provide an additional pathway for interface-trap formation in these devices.

42 ENGINEERING↗
DOE OSTI2021

Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology

Semiconductor–insulator interfaces play an important role in the reliability of integrated devices; however, the impact of these interfaces on the physical mechanisms related to single-event effects has not been previously reported. We present experimental data that demonstrate that single-event charge collection can be impacted by changes in interface quality. The experimental data, combined with simulations, show that single-event response may depend on surface recombination at interface defects. The effect depends on strike location and increases with increasing linear energy transfer (LET). Surface recombination can affect single-event charge collection for interfaces with a surface recombination velocity (SRV) of 1000 cm/s and is a dominant charge collection mechanism with SRV >10 5 cm/s.

42 ENGINEERING↗
DOE OSTI2020

DFF Layout Variations in CMOS SOI—Analysis of Hardening by Design Options

Four D flip-flop (DFF) layouts were created from the same schematic in Sandia National Laboratories’ CMOS7 silicon-on-insulator (SOI) process. Single-event upset (SEU) modeling and testing showed an improved response with the use of shallow (not fully bottomed) N-type metal-oxide-semiconductor field-effect transistors (NMOSFETs), extending the size of the drain implant and increasing the critical charge of the transmission gates in the circuit design and layout. This research also shows the importance of correctly modeling nodal capacitance, which is a major factor determining SEU critical charge. Accurate SEU models enable the understanding of the SEU vulnerabilities and how to make the design more robust.

42 ENGINEERING↗