Machine learning-based reconstruction for resistive silicon sensors
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Engineering topics
Tricoli, Alessandro
Publications and source records attributed to Tricoli, Alessandro.
Response of AC-coupled Low Gain Avalanche Detectors to Ionizing and Non-ionizing Radiation Damage
Low gain avalanche diodes with DC- and AC-coupled readout were exposed to ionizing and non-ionizing radiation at levels relevant to future experiments in particle, nuclear, and medical physics and to astrophysics. Damage-related change in their acceptor removal constants and in the resistivity of the region between the guard ring and the active area are reported, as is change in the leakage current and depletion voltages of the active volumes.
FOS: Physical sciences↗
Spectroscopic performance of Low-Gain Avalanche Diodes for different types of radiation
LGADs (Low-Gain Avalanche Diodes or Detectors) are a type of silicon Avalanche Photo-Diodes originally developed for the fast detection of minimum ionizing particles in high-energy physics experiments. Thanks to their fast timing performance, the LGAD paradigm enables detectors to accurately measure minimum ionizing particles with a timing resolution of a few tens of picoseconds. Such a performance is due to a thin substrate and the presence of a moderate signal gain. This internal gain of a few tens is enough to compensate for the reduced charge deposition in the thinner substrate and the noise of fast read-out systems. While LGADs are optimized for the detection of minimum ionizing particles for high-energy particle detectors, it is critical to study their performance for the detection of different types of particle, such as X-rays, gamma-rays, or alphas. In this paper, we evaluate the gain of three types of LGADs: two devices with different geometries and doping profiles fabricated by Brookhaven National Laboratory, and one fabricated by Hamamatsu Photonics with a different process. Since the gain in LGADs depends on the bias voltage applied to the sensor, pulse-height spectra have been acquired for bias voltages spanning from the depletion voltage up to the breakdown voltage. Finally, the signal-to-noise ratio of the generated signals and the shape of their spectra allow us to probe the underlying physics of the multiplication process.
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