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Trinh, T. Q.

Publications and source records attributed to Trinh, T. Q..

6 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Multi-Band and Broad-Band Infrared Detectors Based on III-V Materials for Spectral Imaging Instruments

Quantum well infrared photodetector technology has shown remarkable success by realizing large-format focal plane arrays in both broad-bands and in multi-bands. The spectral response of these detectors based on the III-V material system are tailorable within the mid and long wavelength IR bands (similar to 3-25 mu m) and possibly beyond. Multi-band and broad-band detector arrays have been developed by vertically integrating stacks of multi quantum wells tailored for response in different wavelengths bands. Each detector stack absorbs photons within the specified wavelength band while allowing the transmission other photons, thus efficiently permitting multiband detection. Flexibility in many design parameters of these detectors allows for tuning and tailoring the spectral shape according to application requirements, specifically for spectral imaging instruments.

quantum well devices↗
NASA NTRS2005

Tuning and tailoring of broadband quantum-well infrared photodetector responsivity spectrum.

The spectral response of quantum-well infrared photodetectors (QWIPs) based on the III-V material system are tailorable to narrow or broad bandwidths within mid- and long-wavelength infrared bands. Typical broad-band QWIPs show considerable spectral shape change with bias voltage, particularly near the cut-off wavelength region. Two alternatives to the typical broadband QWIP design have been demonstrated. These designs consist of two multiquantum-well (QW) stacks or alternatively placed QWs and produce nearly fixed spectrums within the operating bias voltages. Flexibility in many design parameters of these detectors allows for tuning and tailoring the spectral shape according to application requirements, specifically for spectral imaging instruments

Liu, A. W. K.↗
NASA NTRS1985

Sixty GHz IMPATT diode development

The objective of this program is to develop 60 GHz GaAs IMPATT Diodes suitable for communications applications. The performance goal of the 60 GHz IMPATT is 1W CW output power with a conversion efficiency of 15 percent and 10 year life time. During the course of the program, double drift (DD) GaAs IMPATT Diodes have been developed resulting in the state of the art performance at V band frequencies. A CW output power of 1.12 W was demonstrated at 51.9 GHz with 9.7 percent efficiency. The best conversion efficiency achieved was 15.3 percent. V band DD GaAs IMPATTs were developed using both small signal and large signal analyses. GaAs wafers of DD flat, DD hybrid, and DD Read profiles using molecular beam epitaxy (MBE) were developed with excellent doping profile control. Wafer evaluation was routinely made by the capacitance versus voltage (C-V) measurement. Ion mass spectrometry (SIMS) analysis was also used for more detailed profile evaluation.

Ma, Y. E.↗