Tseng, Hsin-Fu | Search NASA

NASA NTRS1992

Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

Hoenk, Michael E.↗

NASA NTRS1987

High performance visible and near-infrared charge-coupled-device array for spectroscopy applications

This paper describes the design and performance of a scientific CCD array for use in NASA's Shuttle Image Spectrometer Experiment. The device is a four-phase, buried-channel CCD structure that operates in the frame-transfer mode. The sensor consists of 64 x 404 pixels, has a 100 percent fill factor, and operates in the visible and near-infrared spectral regions. In operation, the 404 horizontal elements provide spatial information, while the 64 vertical elements give spectral information covering the wavelength range of 400 to 1000 nm in 10 nm increments. The high full-well capacity of each pixel and low noise floor yield a dynamic range of more than 95 dB. In addition, the device has been designed to have good linearity characteristics. The unique dual-output structure allows a horizontal row to be read out to the right or to the left, or it can be split from the middle to both right and left output circuits simultaneously for high speed applications. The power dissipation of the device is about 60 mW.

Wang, Weng-Lyang↗