Engineering topics
Publications and source records attributed to Turner, G. W..
High power 2.05-mu m Fabry-Perot and distributed feedback (DFB) ridge waveguide lasers fabricated from epitaxially grown InGaAsSb/AlGaAsSb/GaSb and InGaAs/InP hetero-structures are reported.
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Spectroscopy and photometry are used to show that MR Persei, an object originally classified as a dwarf nova, is in fact a flare star. The automated CCD photometry consists of sequences of exposures within a single night as well as long-term photometry over a five-month interval. One sequence shows a 30-min flare, accompanied by post-flare 'dips'. A 0.2 mag variation with a period of about one-half day is also seen in this sequence. The long-term photometry is used to refine the period to 0.45483 d, which we attribute to the rotation of a spotted star. Evidence for membership of MR Per in the young Alpha Per cluster is considered, and found to be inconclusive.
Double-heterostructure solar cells have been fabricated from wafers prepared by using organometallic chemical vapor deposition to grow a p GaAs absorbing layer sandwiched between p(+) and n(+) AlGaAs layers. The best cell, which incorporates an abrupt AlGaAs/GaAs shallow heterojunction, exhibits a global AM1 one-sun conversion efficiency of 23 percent. The rate at which the open-circuit voltage decreases with increasing temperature is lower for the double-heterostructure cells than for GaAs shallow-homojunction cells.
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Shallow-homojunction n+/p/p+ solar cells with one-sun, AM1 conversion efficiencies as high as 12.9 percent have been fabricated in Al0.2Ga0.8As epitaxial layers grown by organometallic chemical vapor deposition on single-crystal GaAs substrates. For these cells, which have n+ layers thinned by anodic oxidation to about 500 A, the quantum efficiencies in the short-wavelength portion of the spectrum are as high as the best reported for AlGaAs cells with high band-gap window layers.
Shallow-homojunction GaAs solar cells are fabricated with a back-surface field (BSF) produced by a GaAs/Al(0.2)Ga(0.8)As heterostructure. These cells exhibit higher open-circuit voltages and conversion efficiencies than control cells made with a p-GaAs/p(+)-GaAs BSF. Conversion efficiencies of over 22 percent (AM1, total area) have been obtained with this new structure. The use of a higher bandgap material below the active region not only provides an enhanced BSF but will also permit the implementation of two solar-cell designs: a GaAs cell with a back-surface reflector and an AlGaAs cell that can be used as the upper cell in tandem configurations.