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Tyryshkin, A. M.

Publications and source records attributed to Tyryshkin, A. M..

5 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Multi-frequency spin manipulation using rapidly tunable superconducting coplanar waveguide microresonators

In this work, we demonstrate the use of frequency-tunable superconducting NbTiN coplanar waveguide microresonators for multi-frequency pulsed electron spin resonance (ESR) experiments. By applying a bias current to the center pin, the resonance frequency (~7.6 GHz) can be continuously tuned by as much as 95 MHz in 270 ns without a change in the quality factor of 3000 at 2 K. We demonstrate the ESR performance of our resonators by measuring donor spin ensembles in silicon and show that adiabatic pulses can be used to overcome magnetic field inhomogeneities and microwave power limitations due to the applied bias current. We take advantage of the rapid tunability of these resonators to manipulate both phosphorus and arsenic spins in a single pulse sequence, demonstrating pulsed double electron-electron resonance. Our NbTiN resonator design is useful for multi-frequency pulsed ESR and should also have applications in experiments where spin ensembles are used as quantum memories.

42 ENGINEERING↗
DOE OSTI2016

Spin coherence and 14N ESEEM effects of nitrogen-vacancy centers in diamond with X-band pulsed ESR

Pulsed ESR experiments are reported for ensembles of negatively-charged nitrogen-vacancy centers (NV - ) in diamonds at X-band magnetic fields (280–400 mT) and low temperatures (2–70 K). The NV - centers in synthetic type IIa diamonds (nitrogen impurity concentration < 1 ppm) are prepared with bulk concentrations of 2 • 10 13 cm -3 to 4• 10 14 cm -3 by high-energy electron irradiation and subsequent annealing. We find that a proper post-radiation anneal (1000°C for 60 min) is very important to repair the radiation damage and to recover long electron spin coherence times for NV - s. After the annealing, spin coherence times of T 2 = 0.74ms at 5 K are achieved, being only limited by 13 C nuclear spectral diffusion in natural abundance diamonds. By measuring the temperature dependence of T 2 in the under-annealed diamonds (900°C) we directly extract the density (10 14 -16 cm -3 ) and activation energy (2.5 meV) of unannealed defects responsible for the faster NV - decoherence. At X-band magnetic fields, strong electron spin echo envelope modulation (ESEEM) is observed originating from the central 14 N nucleus, and we extract accurate 14 N nuclear hypefine and quadrupole tensors. In addition, the ESEEM effects from two proximal 13 C sites (second-nearest neighbor and fourth-nearest neighbor) are resolved and the respective 13 C hyperfine coupling constants are extracted.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Fast, low-power manipulation of spin ensembles in superconducting microresonators

We demonstrate the use of high-Q superconducting coplanar waveguide (CPW) microresonators to perform rapid manipulations on a randomly distributed spin ensemble using very low microwave power (400 nW). This power is compatible with dilution refrigerators, making microwave manipulation of spin ensembles feasible for quantum computing applications. We also describe the use of adiabatic microwave pulses to overcome microwave magnetic field (B{sub 1}) inhomogeneities inherent to CPW resonators. This allows for uniform control over a randomly distributed spin ensemble. Sensitivity data are reported showing a single shot (no signal averaging) sensitivity to 10{sup 7} spins or 3×10{sup 4}spins/√(Hz) with averaging.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Stark shift and field ionization of arsenic donors in {sup 28}Si-silicon-on-insulator structures

We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified {sup 28}Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to 2 V/μm to be applied across the SOI layer. Utilizing this structure, we measure the Stark shift parameters of arsenic donors embedded in the {sup 28}Si-SOI layer and find a contact hyperfine Stark parameter of η{sub a} = −1.9 ± 0.7 × 10{sup −3} μm{sup 2}/V{sup 2}. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.

36 MATERIALS SCIENCE↗