Engineering topics
Ulmen, Benjamin
Publications and source records attributed to Ulmen, Benjamin.
Magneto-Optical Measurement of High Magnetic Fields for Pulsed Power Systems.
Abstract not provided.
Considerations for improvements to the 25 TW Saturn high-current driver.
Abstract not provided.
Optical measurement of the new Saturn gas switch as a timing fiducial.
Abstract not provided.
3D Electromagnetic Simulations of the Saturn Waterline Through the Vacuum Region.
Abstract not provided.
Power flow simulations of the Saturn accelerator using 1D multi-mode transmission line models.
Abstract not provided.
Saturn Radiation Dose Environment Characterization
To understand the environment where a time-resolved hard x-ray spectrometer (AXIOM) might be fielded, experiments and simulations were performed to analyze the radiation dose environment underneath the Saturn vacuum dome. Knowledge of this environment is critical to the design and placement of the spectrometer. Experiments demonstrated that the machine performance, at least in terms of on-axis dose, has not significantly changed over the decades. Simulations of the off-axis dose were performed to identify possible spectrometer locations of interest. The effects from the source and dome hardware as well as source distributions and angles of incidence on the radiation environment were also investigated. Finally, a unified radiation transport model was developed for two widely used radiation transport codes to investigate the off-axis dose profiles and the time-dependent x-ray energy spectrum. The demonstrated equivalence of the unified radiation transport model between the radiation transport codes allows the team to tie future time-dependent x-ray environment calculations to previous integral simulations for the Saturn facility.
Simulation and Modeling of Time-Resolved X-Ray Detector for the Saturn Accelerator
In this work, we present the technology-aided computer design (TCAD) device simulation and modeling of a silicon p-i-n diode for detecting time-dependent X-ray radiation. We show that the simulated forward and reverse breakdown current–voltage characteristics agree well with the measured data under nonradiation environment by only calibrating carrier lifetimes for the forward bias case and avalanche model critical fields for the reverse bias condition. Using the calibrated parameters and other nominal material properties, we simulated the radiation responses of the p-i-n diode and compared with experimental data when the diode was exposed to X-ray radiation at Sandia’s Saturn facility and the Idaho State University (ISU) TriMeV facility. For Saturn’s Gaussian dose-rate pulses, we show three findings from TCAD simulations. First, the simulated photocurrents are in excellent agreement with the measured data for two dose-rate pulses with peak values of 1.16×10 10 and 1.88×10 10 rad(Si)/s. Second, the simulation results of high dose-rate pulses predict increased delayed photocurrents with longer time tails in the diode electrical responses due to excess carrier generation. Third, simulated peak values of diode radiation responses versus peak dose rates at different bias conditions provide useful guidance to determine the dose-rate range that the p-i-n diode can reliably detect in experiment. For TriMeV’s non-Gaussian dose-rate pulse, our simulated diode response is in decent agreement with the measured data without further calibration. We also studied the effects of device geometry, recombination process, and dose-rate enhancement via TCAD simulations to understand the higher measured response in the time after the peak dose-rate radiation for the p-i-n diode exposed to TriMeV irradiation.