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Vajtai, Robert

Publications and source records attributed to Vajtai, Robert.

11 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

An Impedance Humidity Sensor Based on CVD Grown WSe 2 2D Films

2D materials-based planar devices have been sought after for gas and humidity sensor applications owing to their high sensitivity due to their ultrathin nature and increased surface area. Herein, 2D WSe 2 films-based planner devices were fabricated to evaluate their performance for potential application in humidity sensors. The structure and morphology of the WSe 2 sensing films were studied by Raman spectroscopy, photoluminescence, optical microscopy, and scanning electron microscopy (SEM) techniques. The relative humidity-dependent sensing performances of the 2D WSe 2 films were evaluated using current–voltage (I–V), relative impedance, and complex total impedance (electrochemical impedance spectroscopy, EIS) techniques. This sensor showed a very stable and repeatable performance investigated over the period of 18 months. The response and recovery times of the WSe 2 -based impedance sensors were found to be 40 and 30 s, respectively. The WSe 2 sensor exhibits a 2 ± 1% minimum hysteresis at a lower humidity level (50% RH) and around 8 ± 2% maximum hysteresis at relative humidity level (70% RH). This value of hysteresis is in the acceptable range during the initial investigation of any material to explore its potential for application in humidity sensors. The density functional theory (DFT) analysis was performed with the interaction from water molecules of the WSe 2 sample for a better understanding of the sensing mechanism of devices.

2D- WSe2↗
DOE OSTI2023

VO 2 phase change electrodes in Li-ion batteries

Use of electrode materials that show phase change behavior and hence drastic changes in electrochemical activity during operation has not been explored for Li-ion batteries. Here we demonstrate the vanadium oxide (VO 2 ) cathode that undergoes a metal–insulator transition due to the first-order structural phase transition at an accessible temperature of 68 °C for battery operation. Using a suitable electrolyte operable across the phase transition range and compatible with vanadium oxide cathodes, we studied the effect of cathode active material structural changes on lithium insertion followed by the electrochemical characteristics above and below the phase transition temperature. The high-temperature VO 2 phase shows significantly improved capacitance, enhanced current rate capabilities, improved electrical conductivity and lithium-ion diffusivity compared to the insulating low temperature phase. In conclusion, this opens up new avenues for electrode design, allowing manipulation of electrochemical reactions around phase transition temperatures, and in particular enhancing electrochemical properties at elevated temperatures contrary to the existing class of battery chemistries that lead to performance deterioration at elevated temperatures.

25 ENERGY STORAGE↗
DOE OSTI2023

Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition

Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap > 4.0 eV), such as BN and diamond, hold significant importance for the development of high-power electronics in the next generation. However, achieving in situ heteroepitaxy of BN/diamond or vice versa remains exceptionally challenging due to the complex growth kinetics involved. In this work, we grew BN thin film on (100) single-crystal diamonds using pulsed laser deposition and investigated its structural, magnetic, optical, and thermal properties. Throughout this study, the structural analyses confirmed the growth of BN films, which exhibited diamagnetic behavior at room temperature. Notably, the film demonstrated anisotropic refractive index characteristics within the visible-to-near-infrared wavelength range. The room-temperature cross-plane thermal conductivity of BN is 1.53 ± 0.77 W/mK, while the thermal conductance of the BN/diamond interface is 20 ± 2 MW/m 2 ⁢K. These findings have significant implications for a range of device applications based on UWBG BN/diamond heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Non-Linear Optics at Twist Interfaces in h-BN/SiC Heterostructures

Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers must be precisely controlled and the layers have to be single crystalline with uniform atomic ordering. Here, in this work, an alternative, simple, and scalable approach is suggested, where nanocrystalline two-dimensional (2D) film on 3D substrates yields twisted-interface-dependent properties. Ultrawide-bandgap hexagonal boron nitride (h-BN) thin films are directly grown on high in-plane lattice mismatched wide-bandgap silicon carbide (4H-SiC) substrates to explore the twist-dependent structure-property correlations. Concurrently, nanocrystalline h-BN thin film shows strong non-linear second-harmonic generation and ultra-low cross-plane thermal conductivity at room temperature, which are attributed to the twisted domain edges between van der Waals stacked nanocrystals with random in-plane orientations. First-principles calculations based on time-dependent density functional theory manifest strong even-order optical nonlinearity in twisted h-BN layers. This work unveils that directly deposited 2D nanocrystalline thin film on 3D substrates could provide easily accessible twist-interfaces, therefore enabling a simple and scalable approach to utilize the 2D-twistronics integrated in 3D material devices for next-generation nanotechnology.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications

The room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. Low temperature growth supersedes the requirement of elevated growth temperatures accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diffusion related deterioration of the functional properties and the consequent deterioration of the device performance. Here, we demonstrated the growth of ultrawide-bandgap boron nitride (BN) at room temperature by using the pulsed laser deposition (PLD) process, which exhibited various functional properties for potential applications. Comprehensive chemical, spectroscopic and microscopic characterizations confirmed the growth of ordered nanosheet-like hexagonal BN (h-BN). Functionally, the nanosheets show hydrophobicity, high lubricity (low coefficient of friction), and a low refractive index within the visible to near-infrared wavelength range, and room temperature single-photon quantum emission. In conclusion, our work unveils an important step that brings a plethora of potential applications for these room temperature grown h-BN nanosheets as the synthesis can be feasible on any given substrate, thus creating a scenario for “h-BN on demand” under a frugal thermal budget.

2D h-BN↗
DOE OSTI2022

Low temperature CVD growth of WSe 2 enabled by moisture-assisted defects in the precursor powder

Two-dimensional transition metal dichalcogenides (TMDs) have been proposed for a wide variety of applications, such as neuromorphic computing, flexible field effect transistors, photonics, and solar cells, among others. However, for most of these applications to be feasible, it is necessary to integrate these materials with the current existing silicon technology. Although chemical vapor deposition is a promising method for the growth of high-quality and large-area TMD crystals, the high temperatures necessary for the growth make this technique incompatible with the processes used in the semiconductor industry. Herein, we demonstrate the possibility of low-temperature growth of TMDs, using tungsten selenide (WSe 2 ) as a model, by simply using moisture-assisted defective tungsten oxide (WO 3 ) precursor powders during the growth of these materials. Density functional theory calculations reveal the mechanism by which moisture promotes the defect formation on the precursor crystal structure and how it dictates the reduction of the temperature of the growth. The results were compared with the standard growth at high temperatures and with a precursor mixture with alkali salts to show the high quality of the WSe 2 grown at temperatures as low as 550 °C. To conclude, the work improves the understanding of nucleation and growth mechanisms of WSe 2 at low temperatures and provides a useful strategy for the growth of TMDs at temperatures required for the back-end-of-line compatibility with current silicon technology.

2D materials↗
DOE OSTI2022

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, in this paper, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band x-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, and Raman) and microscopic (atomic force microscopy and scanning transmission electron microscopy) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that the BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (~234 V) as compared to GaN (~168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step toward bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.

42 ENGINEERING↗
DOE OSTI2020

Scale-Enhanced Magnetism in Exfoliated Atomically Thin Magnetite Sheets

The discovery of ferromagnetism in atomically thin layers at room temperature widens the prospects of 2D materials for device applications. Recently, two independent experiments demonstrated magnetic ordering in two dissimilar 2D systems, CrI 3 and Cr 2 Ge 2 Te 6 , at low temperatures and in VSe 2 at room temperature, but observation of intrinsic room-temperature magnetism in 2D materials is still a challenge. Here a transition at room temperature that increases the magnetization in magnetite while thinning down the bulk material to a few atom-thick sheets is reported. DC magnetization measurements prove ferrimagnetic ordering with increased magnetization and density functional theory calculations ascribe their origin to the low dimensionality of the magnetite layers. Additionally, surface energy calculations for different cleavage planes in passivated magnetite crystal agree with the experimental observations of obtaining 2D sheets from non-van der Waals crystals.

2D Magnetism↗