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Vargas, Nicolas M.

Publications and source records attributed to Vargas, Nicolas M..

Tuning Spin-Orbit Torques Across the Phase Transition in VO 2 /NiFe Heterostructure

The emergence of spin-orbit torques as a promising approach to energy-efficient magnetic switching has generated large interest in material systems with easily and fully tunable spin-orbit torques. We report current-induced spin-orbit torques in VO 2 /NiFe heterostructures are investigated using spin-torque ferromagnetic resonance, where the VO 2 layer undergoes a prominent insulator-metal transition. A roughly twofold increase in the Gilbert damping parameter, α, with temperature is attributed to the change in the VO 2 /NiFe interface spin absorption across the VO 2 phase transition. More remarkably, a large modulation (±100%) and a sign change of the current-induced spin-orbit torque across the VO 2 phase transition suggest two competing spin-orbit torque generating mechanisms. The bulk spin Hall effect in metallic VO 2 , corroborated by the first-principles calculation of the spin Hall conductivity σ SH ≈ -10 4 ($\frac{\hbar}{e}$) Ω -1 m -1 , is verified as the main source of the spin-orbit torque in the metallic phase. The self-induced/anomalous torque in NiFe, with opposite sign and a similar magnitude to the bulk spin Hall effect in metallic VO 2 , can be the other competing mechanism that dominates as temperature decreases. For applications, the strong tunability of the torque strength and direction opens a new route to tailor spin-orbit torques of materials that undergo phase transitions for new device functionalities.

36 MATERIALS SCIENCE↗

Imaging of Electrothermal Filament Formation in a Mott Insulator

Resistive switching—the current- and voltage-induced change of electrical resistance—is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching in a Mott insulator, which undergoes a thermally driven metal-to-insulator transition. Two distinct switching mechanisms are reported for such a system: electric-field-driven resistive switching and electrothermal resistive switching. The latter results from an instability caused by Joule heating. Here, we present the visualization of the reversible resistive switching in a planar V 2 O 3 thin-film device using high-resolution wide-field microscopy in combination with electric transport measurements. We investigate the interaction of the electrothermal instability with the strain-induced spontaneous phase separation in the V 2 O 3 thin film at the Mott transition. The photomicrographs show the formation of a narrow metallic filament with a minimum width ≲500 nm. Although the filament formation and the overall shape of the current-voltage characteristics (IVCs) are typical of an electrothermal breakdown, we also observe atypical effects such as oblique filaments, filament splitting, and hysteretic IVCs with sawtoothlike jumps at high currents in the low-resistance regime. We are able to reproduce the experimental results in a numerical model based on a two-dimensional resistor network. This model demonstrates that resistive switching in this case is indeed electrothermal and that the intrinsic heterogeneity is responsible for the atypical effects. This heterogeneity is strongly influenced by strain, thereby establishing a link between switching dynamics and structural properties.

42 ENGINEERING↗

Spatiotemporal characterization of the field-induced insulator-to-metal transition

Watching a metal filament grow Resistive switching is a process in which the electrical resistance of a sample changes abruptly in response to a voltage pulse, often by orders of magnitude. This process is at the heart of many neuromorphic computing approaches but visualizing it in both space and time is tricky. del Valle et al . monitored the resistive switching in three different vanadium oxide compounds by measuring time- and space-resolved optical reflectivity (see the Perspective by Hilgenkamp and Gao). A characteristic conducting filament was quickly nucleated on the inhomogeneities in the sample and then propagated due to Joule heating. —JS

Science & Technology - Other Topics↗

Helical spin structure in iron chains with hybridized boundaries

In this paper, we have compared the magnetic properties of well-controlled ultra-short (≤50 nm) atomic iron (Fe) chains embedded in Fe-phthalocyanine films with those in Fe–hydrogen (H2) phthalocyanine superlattices. Surprisingly, we found that the coercivity of the atomic chains with free boundary conditions is independent of the chain length, whereas the one subject to hybridization of the chain ends exhibits an unexpected length dependence. These findings suggest that ferromagnetism in the free-boundary condition system is caused by an intrinsic indirect exchange. On the other hand, controlled boundary conditions produce a helical spin structure due to an extrinsic indirect exchange, which arises from the interaction between iron atoms at the ends of the chain and the hydrogen in the H 2 phthalocyanine spacer. As a consequence, during magnetic reversal, ultra-short iron chains subject to boundary clamping develop a helical spin structure, leading to increased coercivity. These findings suggest unique insights and ideas for the design of atomic-scale ultra-dense magnetic storage nanodevices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ultradense Arrays of Sub-100 nm Co/CoO Nanodisks for Spintronics Applications

Sub-100 nm ferromagnetic/antiferromagnetic nanodisks present enhanced magnetic properties with respect to their thin film counterparts. Co/CoO disks were fabricated over large areas by a transferring process of an anodic aluminum oxide membrane, electron beam evaporation of Co, and subsequent oxidation to CoO. This method reveals exchange bias fields up to 4 times larger than that in thin films and higher blocking temperatures for the same oxidation protocol. The significant improvement of the magnetic properties is attributed to finite-size effects in nanostructures and might be exploited in diverse areas such as the magnetic stabilization of ultradense arrays or the scalability process of patterned heterostructures in spintronic phenomena.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Chiral symmetry and scale invariance breaking in spin chains

The effects of the Dzyaloshinsky-Moriya interaction on finite size one-dimensional (1D) magnetic chains are investigated as a function of their length. The magnetic configuration the system adopts for varying boundary conditions are explored analytically, which leads to the appearance of chiral configurations that play a crucial role. The coercive and exchange bias fields show an unexpected chain length dependence, caused by the boundary conditions and by chiral symmetry breaking, which in turn leads to the breakdown of scale-invariance. Our treatment yields results in agreement with experimental evidence and ongoing research on phthalocyanine iron chains bonded to hydrogen.

36 MATERIALS SCIENCE↗