Search NASA⌕ Search

Engineering topics

Venkatesan, T.

Publications and source records attributed to Venkatesan, T..

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Large microwave inductance of granular boron-doped diamond superconducting films

Boron-doped diamond granular thin films are known to exhibit superconductivity with an optimal critical temperature of T c =7.2 K. Here, we report the measured in-plane complex surface impedance of boron-doped diamond films in the microwave frequency range using a resonant technique. Experimentally measured inductance values are in good agreement with estimates obtained from the normal state sheet resistance of the material. Additionally, the magnetic penetration depth temperature dependence is consistent with that of a fully gapped s-wave superconductor. Boron-doped diamond films should find application where high kinetic inductance is needed, such as microwave kinetic inductance detectors and quantum impedance devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Reversible hydrogen control of antiferromagnetic anisotropy in α-Fe 2 O 3

Antiferromagnetic insulators are a ubiquitous class of magnetic materials, holding the promise of low-dissipation spin-based computing devices that can display ultra-fast switching and are robust against stray fields. However, their imperviousness to magnetic fields also makes them difficult to control in a reversible and scalable manner. Here we demonstrate a novel proof-of-principle ionic approach to control the spin reorientation (Morin) transition reversibly in the common antiferromagnetic insulator α-Fe 2 O 3 (haematite) - now an emerging spintronic material that hosts topological antiferromagnetic spin-textures and long magnon-diffusion lengths. We use a low-temperature catalytic-spillover process involving the post-growth incorporation or removal of hydrogen from α-Fe 2 O 3 thin films. Hydrogenation drives pronounced changes in its magnetic anisotropy, Néel vector orientation and canted magnetism via electron injection and local distortions. We explain these effects with a detailed magnetic anisotropy model and first-principles calculations. Tailoring our work for future applications, we demonstrate reversible control of the room-temperature spin-state by doping/expelling hydrogen in Rh-substituted α-Fe 2 O 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2019

Dielectric resonator method for determining gap symmetry of superconductors through anisotropic nonlinear Meissner effect

We present a new measurement method which can be used to image the gap nodal structure of superconductors whose pairing symmetry is under debate. This technique utilizes a high quality factor microwave resonance involving the sample of interest. While supporting a circularly symmetric standing wave current pattern, the sample is perturbed by a scanned laser beam, creating a photoresponse that was previously shown to reveal the superconducting gap anisotropy. Simulation and the measurement of the photoresponse of an unpatterned Nb film show less than 8% anisotropy, as expected for a superconductor with a nearly isotropic energy gap along with expected systematic uncertainty. On the other hand, measurement of a YBa 2 Cu 3 O 7- δ thin film shows a clear 4-fold symmetric image with ~12.5% anisotropy, indicating the well-known 4-fold symmetric d x 2 - y 2 gap nodal structure in the ab -plane. The deduced gap nodal structure can be further cross-checked by low temperature surface impedance data, which are simultaneously measured. The important advantage of the presented method over the previous spiral resonator method is that it does not require a complicated lithographic patterning process which limits one from testing various kinds of materials due to photoresponse arising from patterning defects. This advantage of the presented technique, and the ability to measure unpatterned samples such as planar thin films and single crystals, enables one to survey the pairing symmetry of a wide variety of unconventional superconductors.

47 OTHER INSTRUMENTATION↗
DOE OSTI2019

Low-temperature magnetoresistance of (111) ( La 0.3 Sr 0.7 ) ( Al 0.65 Ta 0.35 ) O 3 / SrTiO 3

The two-dimensional conducting interfaces in SrTiO 3 -based systems are known to show a variety of coexisting and competing phenomena in a complex phase space. Magnetoresistance measurements, which are typically used to extract information about the various interactions in these systems, must be interpreted with care, since multiple interactions can contribute to the resistivity in a given range of magnetic field and temperature. Here we review all the phenomena that can contribute to transport in SrTiO 3 -based conducting interfaces at low temperatures. We apply this understanding to the perpendicular magnetoresistance data of the high-mobility system of (111) oriented (La 0.3 Sr 0.7 ) (Al 0.65 Ta 0.35 )O 3 / STO heterostructures, and find an excess negative magnetoresistance contribution which cannot be explained by weak localization alone. Here, we argue that contributions from magnetic scattering as well as electron-electron interactions, combined with weak localization/antilocalization, can provide a possible explanation for the observed magnetoresistance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Investigating the Role of Copper Oxide in Electrochemical CO 2 Reduction in Real Time

Copper oxides have been of considerable interest as electrocatalysts for CO 2 reduction (CO2R) in aqueous electrolytes. Yet, their role as an active catalyst in reducing the required overpotential and improving the selectivity of reaction compared with that of polycrystalline copper remains controversial. In this work, we present the use of selected-ion flow tube mass spectrometry, in concert with chronopotentiometry, in situ Raman spectroscopy, and computational modeling, to investigate CO2R on C u 2O nanoneedles, Cu 2 O nanocrystals, and Cu 2 O nanoparticles. We show experimentally that the selective formation of gaseous C2 products (i.e., ethylene) in CO 2 R is preceded by the reduction of the copper oxide (Cu 2 OR) surface to metallic copper. On the basis of density functional theory modeling, CO2R products are not formed as long as Cu 2 O is present at the surface because Cu 2 OR is kinetically and energetically more favorable than CO2R.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Mo-Terminated Edge Reconstructions in Nanoporous Molybdenum Disulfide Film

The catalytic and magnetic properties of molybdenum disulfide (MoS 2 ) are significantly enhanced by the presence of edge sites. One method to obtain a high density of edge sites in a two-dimensional (2D) film is by introducing porosity. Yet, the large-scale bottom-up synthesis of a porous 2D MoS 2 film remains challenging and the correlation of growth conditions to the atomic structures of the edges is not well understood. In this work, using molecular beam epitaxy, we prepare wafer-scale nanoporous MoS 2 films under conditions of high Mo flux and study their catalytic and magnetic properties. Atomic-resolution electron microscopy imaging of the pores reveals two new types of reconstructed Mo-terminated edges, namely, a distorted 1T (DT) edge and the Mo-Klein edge. Nanoporous MoS 2 films are magnetic up to 400 K, which is attributed to the presence of Mo-terminated edges with unpaired electrons, as confirmed by density functional theory calculation. The small hydrogen adsorption free energy at these Mo-terminated edges leads to excellent activity for the hydrogen evolution reaction.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Decreasing the Hydroxylation Affinity of La 1– x Sr x MnO 3 Perovskites To Promote Oxygen Reduction Electrocatalysis

Understanding the interaction between oxides and water is critical to design many of their functionalities, including the electrocatalysis of molecular oxygen reduction. In this study, we probed the hydroxylation of model (001)-oriented La(1-x)SrxMnO3 (LSMO) perovskite surfaces, where the electronic structure and manganese valence was controlled by five substitution levels of lanthanum with strontium, using ambient pressure X-ray photoelectron spectroscopy in a humid environment. The degree of hydroxyl formation on the oxide surface correlated with the proximity of the valence band center relative to the Fermi level. LSMO perovskites with a valence band center closer to the Fermi level were more reactive toward water, forming more hydroxyl species at a given relative humidity. More hydroxyl species correlate with greater electron-donating character to the surface free energy in wetting, and reduce the activity to catalyze oxygen reduction reaction (ORR) kinetics in basic solution. New strategies to design more active catalysts should include design of electronically conducting oxides with lower valence band centers relative to the Fermi level at ORR-relevant potentials.

ambient pressure X-ray photoelectron spectroscopy↗
DOE OSTI2017

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

Non-volatile memories will play a decisive role in the next generation of digital technology. Flash memories are currently the key player in the field, yet they fail to meet the commercial demands of scalability and endurance. Resistive memory devices, and in particular memories based on low-cost, solution-processable and chemically tunable organic materials, are promising alternatives explored by the industry. However, to date, they have been lacking the performance and mechanistic understanding required for commercial translation. Here we report a resistive memory device based on a spin-coated active layer of a transition-metal complex, which shows high reproducibility (~350 devices), fast switching (≤30 ns), excellent endurance (~10 12 cycles), stability (>10 6 s) and scalability (down to ~60 nm 2 ). In situ Raman and ultraviolet–visible spectroscopy alongside spectroelectrochemistry and quantum chemical calculations demonstrate that the redox state of the ligands determines the switching states of the device whereas the counterions control the hysteresis. This insight may accelerate the technological deployment of organic resistive memories.

Goswami, Sreetosh↗
DOE OSTI2017

Electron Accumulation and Emergent Magnetism in LaMnO 3 /SrTiO 3 Heterostructures

Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here in this paper we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO$_{3}$/SrTiO$_{3}$ (001) heterostructures. Using a combination of element-specific x-ray absorption spectroscopy and dichroism, and first-principles calculations, interfacial electron accumulation, and ferromagnetism have been observed within the polar, antiferromagnetic insulator LaMnO$_{3}$. Our results show that the critical thickness for the onset of electron accumulation is as thin as 2 unit cells (UC), significantly thinner than the observed critical thickness for ferromagnetism of 5 UC. The absence of ferromagnetism below 5 UC is likely induced by electron overaccumulation. In turn, by controlling the doping of the LaMnO$_{3}$, we are able to neutralize the excessive electrons from the polar mismatch in ultrathin LaMnO$_{3}$ films and thus enable ferromagnetism in films as thin as 3 UC, extending the limits of our ability to synthesize and tailor emergent phenomena at interfaces and demonstrating manipulation of the electronic and magnetic structures of materials at the shortest length scales.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Electrostatic tuning of magnetism at the conducting (111) (La 0.3 Sr 0.7 )(Al 0.65 Ta 0.35 )/SrTiO 3 interface

We present measurements of the low temperature electrical transport properties of the two dimensional carrier gas that forms at the interface of (111) (La 0.3 Sr 0.7 )(Al 0.65 Ta 0.35 )/SrTiO 3 as a function of applied back gate voltage, V g . As is found in (111) LaAlO 3 /SrTiO 3 interfaces, the low-field Hall coefficient is electron-like but shows a sharp reduction in magnitude below V g ~ 20 V, indicating the presence of hole-like carriers in the system. This same value of V g correlates approximately with the gate voltage below which the magnetoresistance evolves from nonhysteretic to hysteretic behavior at millikelvin temperatures, signaling the onset of magnetic order in the system. Finally, we believe our results can provide insight into the mechanism of magnetism in SrTiO 3 based systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2004

In situ Pulsed Laser Deposition of C-Axis Oriented MgB2 Films and Their Characterization

The recent discovery of an intermetallic superconductor MgB2 has renewed interest in the area of superconductivity not only because of fundamental understanding of superconductivity but also due to its potential applicability in devices such as thermal detectors. Considerable amount of research has been devoted to obtain MgB2 films by an all in situ growth technique. We have grown MgB2 thin films by an all in situ pulsed laser deposition process from pure B and Mg targets. Ultrathin layers of B and Mg were deposited in a multilayer configuration. Hundreds of such Mg-B bilayers with a capping Mg layer on the top were deposited on sapphire substrate. These depositions were done in high vacuum (approx. 10(exp -7) Torr) and at room temperature. After deposition, such a configuration was annealed at high temperature for a short time in a forming gas (4% H2 in Ar). The best films, obtained by this procedure, showed superconducting transition temperature approx. 30 K. These films have been characterized by x-ray diffraction, Rutherford Backscattering Spectrometry, AC susceptibility-, resistivity- (with and without magnetic field) and 1/f noise-measurements. The physical properties of these films will be presented and discussed.

Shinde, Sanjay↗
NASA NTRS1999

Room Temperature Thin Film Ba(x)Sr(1-x)TiO3 Ku-Band Coupled MicrostripPhase Shifters: Effects of Film Thickness, Doping, Annealing and Substrate Choice

We report on measurements taken on over twenty Ku-band coupled microstrip phase shifters (CMPS) using thin ferroelectric films of Ba(x)Sr(1-x)TiO3. This CMPS design is a recent innovation designed to take advantage of the high tunability and tolerate the high dielectric constant of ferroelectric films at Ku- and K-band frequencies. These devices are envisioned as a component in low-cost steerable beam phased area antennas, Comparisons are made between devices with differing film thickness, annealed vs unannealed, Mn-doped vs. undoped, and also substrates of LaAlO3 and MgO. A comparison between the CMPS structure and a CPW phase shifter was also made oil the same ferroelectric film.

VanKeuls, F. W.↗
NASA NTRS1994

Mechanisms of optical response in superconducting YBa2Cu3O7-delta thin films and grain-boundary weak links

The optical response of single grain-boundary weak links in superconducting YBCO thin films has been investigated. At temperatures well below the transition temperature, the grain boundary exhibits an optical response which is qualitatively different from transition edge response. Using a resistively shunted-junction model for the grain-boundary weak link, we find that the optical response below the transition temperature can be described by radiation induced thermal modulation of the critical currents of the weak links. The dependence on the bias current and the temperature distinguishes the weak-link optical response from the transition edge optical response. We discuss novel aspects of a potential radiation detector based on grain-boundary weak-link junctions.

Bhattacharya, S.↗
NASA NTRS1993

Optical response of an ultrathin film and a large-angle grain-boundary in superconducting YBa2Cu3O(7-delta)

We have investigated the optical response of epitaxial ultrathin (3 nm) YBa2Cu3O(7-delta) film on an NdGaO3 substrate and thin (50 nm) film of YBa2Cu3O(7-delta) on a bicrystal SrTiO3 substrate. While the current-voltage characteristics of the ultrathin film indicate a Kosterlitz-Thouless transition (associated with vortex-antivortex unbinding) at a temperature T(KT), we do not observe any optical response at or below T(KT). An enhanced optical response with nonbolometric characteristics was observed from the grain-boundary as compared to the bolometric optical response of the epitaxial film at the resistive transition. These results indicate that the grain-boundary weak links play a significant role in the enhanced optical response near Tc.

Bhattacharya, S.↗