Spatially Resolved Decoherence of Donor Spins in Silicon Strained by a Metallic Electrode
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Engineering topics
Publications and source records attributed to Vion, D..
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In this work, we report long coherence times (up to 300 ms) for near-surface bismuth donor electron spins in silicon coupled to a superconducting microresonator, biased at a clock transition. This enables us to demonstrate the partial absorption of a train of weak microwave fields in the spin ensemble, their storage for 100 ms, and their retrieval, using a Hahn-echo-like protocol. Phase coherence and quantum statistics are preserved in the storage.
We report electron spin resonance measurements of donors in silicon at millikelvin temperatures using a superconducting LC planar micro-resonator and a Josephson parametric amplifier. The resonator includes a nanowire inductor, defining a femtoliter detection volume. Due to strain in the substrate, the donor resonance lines are heavily broadened. In this work, single-spin to photon coupling strengths up to ~ 3 kHz are observed. The single shot sensitivity is 120 ± 24 spins/Hahn echo, corresponding to ≈ 12 ± 3 spins / Hz for repeated acquisition.