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Volz, Martin P.

Publications and source records attributed to Volz, Martin P..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2017

Growth Angle: A Microscopic View

A microscopic continuum mechanical model of the growth angle is proposed. It is based on the van der Waals type framework that is used for surface force phenomena. The obtained augmented Laplace type integro-differential equations are, in general, difficult to analyze. Here we focused primarily on the particular case of equal melt and crystal surface energies. We derived an approximate equation for the meniscus shape, and obtained an analytical relationship between the contact and the growth angle. Interestingly, the same result can be obtained using the macroscopic model of Herring. The case of a macroscopically sharp corner is also considered. For this case, the macroscopic angle is not defined and it can be any angle between the contact angles of both flat surfaces. The microscopic model yields the smooth shape for the meniscus that also is not unique, but depends on the initial position of the meniscus.

Mazuruk, Konstantin↗
NASA NTRS2015

Determination of the Contact Angle Based on the Casimir Effect

On a macroscopic scale, a nonreactive liquid partially covering a homogeneous solid surface will intersect the solid at an angle called the contact angle. For molten metals and semiconductors, the contact angle is materially dependent upon both the solid and liquid and typical values fall in the range 80-170 deg, depending on the crucible material. On a microscopic scale, there does not exist a precise and sharp contact angle but rather the liquid and solid surfaces merge smoothly and continuously. Consider the example of the so called detached Bridgman crystal growth process. In this technique, a small gap is formed between the growing crystal and the crucible. At the crystal/melt interface, a meniscus ring is formed. Its width can be in the range of a few micrometers, approaching a microscopic scale. It then becomes questionable to describe the shape of this meniscus by the contact angle. A more advanced treatment of the interface is needed and here we propose such a refined model. The interaction of the liquid surface with the solid can be calculated by considering two forces: a short-range repulsive force and a longer range (up to a few micrometers) Casimir or van der Waals force.

Mazuruk, Konstantin↗
NASA NTRS2013

Stability of Menisci in Detached Bridgman Growth

Detached growth, also referred to as dewetted growth, is a Bridgman crystal growth process in which the melt is in contact with the crucible wall but the crystal is not. A meniscus bridges the gap between the top of the crystal and the crucible wall. The meniscus shape depends on the contact angle of the melt with the crucible wall, the growth angle of the melt with respect to the solidifying crystal, the gas pressure differential, the Weber number describing the rotation rate of the crucible, and the Bond number. Only some of the meniscus shapes are stable and the stability criterion is the sign of the second variation of the potential energy upon admissible meniscus shape perturbations. The effects of confined gas volumes above and below the melt and crucible rotation are evaluated. The analysis is applicable to the non-stationary case where the crystal radius changes during growth. Static stability maps (crystal radius versus pressure differential) are obtained for a series of Bond numbers, growth angles and Weber numbers. Also, the specific cases of Ge and InSb, in both terrestrial and microgravity conditions, are analyzed. Stability was found to depend significantly on whether the interior surface was considered to be microscopically rough or smooth, corresponding to pinned or unpinned states. It was also found that all meniscus shapes are statically stable in a microgravity environment.

Mazuruk, Konstantin↗
NASA NTRS2010

U.S. Materials Science on the International Space Station: Status and Plans

This viewgraph presentation reviews the current status and NASA plans for materials science on the International Space Station. The contents include: 1) Investigations Launched in 2009; 2) DECLIC in an EXPRESS rack; 3) Dynamical Selection of Three-Dimensional Interface Patterns in Directional Solidification (DSIP); 4) Materials Science Research Rack (MSRR); 5) Materials Science Laboratory; 6) Comparison of Structure and Segregation in Alloys Directionally Solidified in Terrestrial and Microgravity Environments (MICAST/CETSOL); 7) Coarsening in Solid Liquid Mixtures 2 Reflight (CSLM 2R); 8) Crystal Growth Investigations; 9) Levitator Investigations; 10) Quasi Crystalline Undercooled Alloys for Space Investigation (QUASI); 11) The Role of Convection and Growth Competition in Phase Selection in Microgravity (LODESTARS); 12) Planned Additional Investigations; 13) SETA; 14) METCOMP; and 15) Materials Science NRA.

Chiaramonte, Francis P.↗
NASA NTRS2009

On Favorable Thermal Fields for Detached Bridgman Growth

The thermal fields of two Bridgman-like configurations, representative of real systems used in prior experiments for the detached growth of CdTe and Ge crystals, are studied. These detailed heat transfer computations are performed using the CrysMAS code and expand upon our previous analyses [14] that posited a new mechanism involving the thermal field and meniscus position to explain stable conditions for dewetted Bridgman growth. Computational results indicate that heat transfer conditions that led to successful detached growth in both of these systems are in accordance with our prior assertion, namely that the prevention of crystal reattachment to the crucible wall requires the avoidance of any undercooling of the melt meniscus during the growth run. Significantly, relatively simple process modifications that promote favorable thermal conditions for detached growth may overcome detrimental factors associated with meniscus shape and crucible wetting. Thus, these ideas may be important to advance the practice of detached growth for many materials.

Stelian, Carmen↗
NASA NTRS2008

Transient Effects in Planar Solidification of Dilute Binary Alloys

The initial transient during planar solidification of dilute binary alloys is studied in the framework of the boundary integral method that leads to the non-linear Volterra integral governing equation. An analytical solution of this equation is obtained for the case of a constant growth rate which constitutes the well-known Tiller's formula for the solute transient. The more physically relevant, constant ramping down temperature case has been studied both numerically and analytically. In particular, an asymptotic analytical solution is obtained for the initial transient behavior. A numerical technique to solve the non-linear Volterra equation is developed and the solution is obtained for a family of the governing parameters. For the rapid solidification condition, growth rate spikes have been observed even for the infinite kinetics model. When recirculating fluid flow is included into the analysis, the spike feature is dramatically diminished. Finally, we have investigated planar solidification with a fluctuating temperature field as a possible mechanism for frequently observed solute trapping bands.

Mazuruk, Konstantin↗
NASA NTRS2003

Toward Understanding Pore Formation and Mobility during Controlled Directional Solidification in a Microgravity Environment Investigation (PFMI)

The generation and inclusion of detrimental porosity, e.g., pipes and rattails can occur during controlled directional solidification processing. The origin of these defects is generally attributed to gas evolution and entrapment during solidification of the melt. On Earth, owing to buoyancy, an initiated bubble can rapidly rise through the liquid melt and pop at the surface; this is obviously not ensured in a low gravity or microgravity environment. Clearly, porosity generation and inclusion is detrimental to conducting any meaningful solidification-science studies in microgravity. Thus it is essential that model experiments be conducted in microgravity, to understand the details of the generation and mobility of porosity, so that methods can be found to eliminate it. In hindsight, this is particularly relevant given the results of the previous directional solidification experiments conducted in Space. The current International Space Station (ISS) Microgravity Science Glovebox (MSG) investigation addresses the central issue of porosity formation and mobility during controlled directional solidification processing in microgravity. The study will be done using a transparent metal-analogue material, succinonitrile (SCN) and succinonitrile-water 'alloys', so that direct observation and recording of pore generation and mobility can be made during the experiments. Succinonitrile is particularly well suited for the proposed investigation because it is transparent, it solidifies in a manner analogous to most metals, it has a convenient melting point, its material properties are well characterized and, it has been successfully used in previous microgravity experiments. The PFMI experiment will be launched on the UF-2, STS-111 flight. Highlighting the porosity development problem in metal alloys during microgravity processing, the poster will describe: (i) the intent of the proposed experiments, (ii) the theoretical rationale behind using SCN as the study material for porosity generation and migration and, (iii) the experimental protocol for the investigation of the effects of the processing parameters. Photographs of the flight experimental hardware, and the novel sample ampoule, will be exhibited. The experimental apparatus will be described in detail and a summary of the scientific objectives will be presented.

Grugel, Richard N.↗
NASA NTRS2003

Reduction of Defects in Germanium-Silicon

Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in the crystals. In addition to float-zone processing, detached Bridgman growth, although not a completely crucible-free method, is a promising tool to improve crystal quality. It does not suffer from the size limitations of float zoning and the impact of thermocapillary convection on heat and mass transport is expected to be negligible. Detached growth has been observed frequently during g experiments. Considerable improvements in crystalline quality have been reported for these cases. However, neither a thorough understanding of the process nor a quantitative assessment of the quality of these improvements exists. This project will determine the means to reproducibly grow GeSi alloys in a detached mode and seeks to compare processing-induced defects in Bridgman, detached-Bridgman, and floating-zone growth configurations in GeSi crystals (Si less than or equal to 10 at%) up to 20mm in diameter. Specific objectives include: measurement of the relevant material parameters such as contact angle, growth angle, surface tension, and wetting behavior of the GeSi-melt on potential crucible materials; determination of the mechanism of detached growth including the role of convection; quantitative determination of the differences in defects and impurities for crystals grown using normal Bridgman, detached Bridgman, and floating zone (FZ) methods; investigation of the influence of a defined flow imposed by a rotating magnetic field on the characteristics of detached growth; control of time-dependent Marangoni convection in the case of FZ growth by the use of a rotating magnetic field to examine the influence on the curvature of the solid-liquid interface and the heat and mass transport; and growth of benchmark quality GeSi-single crystals.

Szofran, Frank R.↗
NASA NTRS2002

Effects of a Rotating Magnetic Field on Gas Transport During Detached Crystal Growth in Space

During the detached Bridgman growth of semiconductor crystals, the melt has a short free surface which is detached from the ampoule wall near the crystal-melt interface, thus eliminating the crystal defects caused by contact with the ampoule wall. Recent modelling has indicated that initiation and continuation of detached growth depends on the rate of transport of dissolved gas from the crystal-melt interface, where gas is rejected into the melt, to the detached free surface, where evaporating gas maintains the pressure on the free surface. Here we use numerical modelling to investigate whether the application of a rotating magnetic field increases or decreases the transport of rejected gas to the detached free surface. Unfortunately the results show that a rotating magnetic field almost always decreases the evaporation rate at the detached free surface. The exception is an insignificant increase for a short period at the beginning of crystal growth for a few circumstances. The evaporation rate decreases as the strength of the rotating magnetic field is increased.

Walker, John S.↗
NASA NTRS2001

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

Crystal growth by vapor transport has several distinct advantages over melt growth techniques. Among various potential benefits from material processing in reduced gravity the followings two are considered to be related to crystal growth by vapor transport: (1) elimination of the crystal weight and its influence on the defect formation and (2) reduction of natural buoyancy-driven convective flows arising from thermally and/ or solutally induced density gradient in fluids. The previous results on vapor crystal growth of semiconductors showed the improvements in surface morphology, crystalline quality, electrical properties and dopant distribution of the crystals grown in reduced gravity as compared to the crystals grown on Earth. But the mechanisms, which are responsible for the improvements and cause the gravitational effects on the complicated and coupled processes of vapor mass transport and growth kinetics, are not well understood.

Su, Ching-Hua↗
NASA NTRS2001

Reduction of Defects in Germanium-Silicon

Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in the crystals. In addition to float-zone processing, detached Bridgman growth, although not a completely crucible-free method, is a promising tool to improve crystal quality. It does not suffer from the size limitations of float zoning and the impact of thermocapillary convection on heat and mass transport is expected to be negligible. Detached growth has been observed frequently during (micro)g experiments. Considerable improvements in crystalline quality have been reported for these cases. However, neither a thorough understanding of the process nor a quantitative assessment of the quality of these improvements exists. This project will determine the means to reproducibly grow Pepsi alloys in a detached mode and seeks to compare processing-induced defects in Bridgman, detached-Bridgman, and floating-zone growth configurations in Pepsi crystals (Si less or = 10 at%) up to 20mm in diameter.

Szofran, Frank R.↗
NASA NTRS2000

The Effect of a Rotating Magnetic Field on Flow Stability During Crystal Growth

The effect of a rotating magnetic field on the stability of flow in crystal growth configurations has been experimentally modeled using liquid gallium contained in a finite cylinder and heated from below. Several distinct flow regions were determined as a function of the Rayleigh and Hartmann numbers. At low values of the Rayleigh and Hartmann numbers, a region of stationary flow exists. As the rotating magnetic field is increased, the critical Rayleigh number bounding the stationary flow region can increase by a factor of 10. However, the rotating magnetic field itself induces an instability at a critical value of the Hartmann number independent of the Rayleigh number. In the stationary flow region, the rotating magnetic field can induce fluid motion with velocities several orders of magnitude larger than typical semiconductor crystal growth velocities. Thus, a rotating magnetic field can be used to achieve the benefits of forced convection without triggering deleterious instabilities.

Volz, Martin P.↗
NASA NTRS2000

Convection Induced by High Frequency Rotating Magnetic Field in Ionic Aqueous Solutions

Rotating magnetic fields (RMF) have found applications in modern metallurgy. Examples are casting and semiconductor crystal growth technology. Rotating convective flows can also be induced in ionic fluids. Due to optical transparency, these fluids offer a great opportunity to visualize convection. In this work, we investigate the dynamics of convection induced by a high frequency (100 kHz range) RMF. A dye injected into a cylindrical column of salty water serves as an indicator of the flow. The developed technique has been used to study mixing phenomena induced by a RMF both when the direc'tion of the field rotation is constant and when it is alternated. Optical recording has been used to analyze this process. A numerical model describing RMF mixing in the laminar regime will also be presented.

Volz, Martin P.↗
NASA NTRS2000

Use of Traveling Magnetic Fields to Control Melt Convection

An axially traveling magnetic wave induces a meridional base flow in an electrically conducting molten cylindrical zone. This flow can be beneficial for crystal growth applications. In particular, it can be effectively used to stir the melt in long cylindrical columns. It can also be tailored to modify the thermal and species concentration fields in the melt and to control the interface shape of the growing crystal. The basic theory of such an application is developed and data from a preliminary mercury column experiment are presented.

Ramachandran, Narayanan↗
NASA NTRS1999

Reduction of Defects in Germanium-Silicon

It is well established that crystals grown without contact with a container have far superior quality to otherwise similar crystals grown in direct contact with a container. In addition to float-zone processing, detached-Bridgman growth is often cited as a promising tool to improve crystal quality, without the limitations of float zoning. Detached growth has been found to occur quite often during microgravity experiments and considerable improvements of crystal quality have been reported for those cases. However, no thorough understanding of the process or quantitative assessment of the quality improvements exists so far. This project will determine the means to reproducibly grow Ge-Si alloys in the detached mode. Specific objectives include: (1) measurement of the relevant material parameters such as contact angle, growth angle, surface tension, and wetting behavior of the GeSi-melt on potential crucible materials; (2) determination of the mechanism of detached growth including the role of convection; (3) quantitative determination of the differences of defects and impurities among normal Bridgman, detached Bridgman, and floating zone (FZ) growth; (4) investigation of the influence of defined azimuthal or meridional flow due to rotating magnetic fields on the characteristics of detached growth; (5) control time-dependent Marangoni convection in the case of FZ-growth by the use of a rotating magnetic field to examine the influence on the curvature of the solid-liquid interface and the heat and mass transport; and (6) grow high quality GeSi-single crystals with Si-concentration up to 10 at% and diameters up to 20 mm.

Szofran, Frank R.↗
NASA NTRS1999

Magnetic Damping of Solid Solution Semiconductor Alloys

The objective of this study is to: (1) experimentally test the validity of the modeling predictions applicable to the magnetic damping of convective flows in electrically conductive melts as this applies to the bulk growth of solid solution semiconducting materials; and (2) assess the effectiveness of steady magnetic fields in reducing the fluid flows occurring in these materials during processing. To achieve the objectives of this investigation, we are carrying out a comprehensive program in the Bridgman and floating-zone configurations using the solid solution alloy system Ge-Si. This alloy system has been studied extensively in environments that have not simultaneously included both low gravity and an applied magnetic field. Also, all compositions have a high electrical conductivity, and the materials parameters permit reasonable growth rates. An important supporting investigation is determining the role, if any, that thermoelectromagnetic convection (TEMC) plays during growth of these materials in a magnetic field. TEMC has significant implications for the deployment of a Magnetic Damping Furnace in space. This effect will be especially important in solid solutions where the growth interface is, in general, neither isothermal nor isoconcentrational. It could be important in single melting point materials, also, if faceting takes place producing a non-isothermal interface. In conclusion, magnetic fields up to 5 Tesla are sufficient to eliminate time-dependent convection in silicon floating zones and possibly Bridgman growth of Ge-Si alloys. In both cases, steady convection appears to be more significant for mass transport than diffusion, even at 5 Tesla in the geometries used here. These results are corroborated in both growth configurations by calculations.

Szofran, Frank R.↗