Substrate dependence of heat dissipation in GaN p-n diodes bonded to SiC, AlN direct-bonded Cu, and diamond
Explore the source record for details and available documents.
Meyers, Vincent Evan↗
Engineering topics
Vuong, Hoang
Publications and source records attributed to Vuong, Hoang.
XeF2 – A new MOCVD source for removal of surface Si contamination and in-situ etching of GaN for epitaxial regrowth
Explore the source record for details and available documents.
Allerman, Andrew A.↗
High-Current (390 A) Large Area Vertical GaN PN Diodes with 1600 V Breakdown
Explore the source record for details and available documents.
Yates, Luke↗
Development of Medium-Voltage High-Current Vertical GaN Power Devices
Explore the source record for details and available documents.
Yates, Luke↗
In-situ MOCVD Etching of GaN using XeF2 for Selective-Area-Epitaxial-Regrowth of p-type GaN for High Voltage PN Diodes
Explore the source record for details and available documents.
Allerman, Andrew A.↗