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Waldstein, Seth W.

Publications and source records attributed to Waldstein, Seth W..

10 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2020

Microwave Photoelasticity: A Resonant Wavelength Approach Applied to PEEK Polymer

Every nondestructive testing (NDT) technique has its unique set of advantages and limitations. Currently, the only existing noncontact NDT method capable of measuring sub-surface stresses, in optically opaque materials, at near-real-time speeds and over large areas is Microwave Photoelasticity (MP). This paper presents a new MP approach, which correlates changes in resonant wavelengths to changes in stress. In addition to a theoretical outline of the approach, the design and operation of an instrument capable of conducting these measurements is described. Finally, the technique is demonstrated by conducting measurements on polyetheretherketone, commonly known as PEEK, polymer. Between the W-Band frequencies of 105 to 115 GHz, PEEK’s stress-optic-coefficient was determined to be of 𝐢𝐢 = βˆ’0.20 Β± 0.02 1/GPa.

Schemmel, Peter J.β†—
NASA NTRS2019

Multi-Band and Multi-Function Reconfigurable Gallium Nitride Based Fully Solid-State Microwave Power Module for Cognitive Radio/Radar Platforms

This paper presents as a proof-of-concept (POC) the design, integration, and performance of a novel reconfigurable S-/X-band Gallium Nitride (GaN) based fully solid-state microwave power module (SSMPM) for the role as the transmit module in a cognitive radio (CR). The SSMPM synergistically integrates multiple amplifiers through diplexing and high power switches to enable a single SSMPM capable of functioning as both S-/X-band amplifiers for telemetry, tracking, and command (TT&C), telecommunications, and science data downlink or as X-band radar for proximity sensing onboard a planetary exploration spacecraft. Integration of an electric field shaping field plate (FP) onto the GaN high electron mobility transistors (HEMTs) in this SSMPM provides increased performance and reliability for operation in the harsh conditions of space. This SSMPM is capable of delivering saturated power (Psat) of 39 dBm (8 W continuous wave (CW)) at S-band, P(sub sat) of 43 dBm (20 W CW) at X-band, and P(sub sat) of >50 dBm (>100 W Pulsed) at X-band.

Simons, Rainee N.β†—
NASA NTRS2019

A Novel Reconfigurable GaN Based Fully Solid-State Microwave Power Module for Communications/Radar Applications

The paper presents as a proof-of-concept (POC) the design, integration, and performance of a novel reconfigurableS-/X-band, GaN based, fully solid-state microwave power module (SSMPM) to enable miniaturization of the overall RFsystem. The SSMPM includes diplexers, pre-amplifiers, a multistage medium power amplifier, SPDT switches, andCW/Pulsed high-power amplifiers. These components are synergistically integrated such that a single SSMPM is capable of being dynamically reconfigured to function as a CW S-/X-band amplifier for TT&C/science data downlink and as a pulsed X-band amplifier for remote sensing radar onboard a planetary exploration spacecraft. The POC SSMPM is capable of delivering Psat of 39 dBm (8 W CW) at S-band, P(sub sat) of 46 dBm (40 W CW) at X-band, and P(sub sat) of >50 dBm (>100 W Pulsed) at X-band.

Simons, Rainee N.β†—
NASA NTRS2019

A Novel Reconfigurable GaN Based Fully Solid-State Microwave Power Module for Communications/Radar Applications

In this paper, we present as a proof-of-concept (POC) the design, integration, and performance of a novel reconfigurable GaN based fully solid-state MPM. The module synergistically integrates diplexers, pre-amplifiers, multistage medium power amplifiers (MPAs), SPDT switches, and CW/Pulsed high power amplifiers (HPAs) with a voltage sequencer, a DC blanking controller, and a low voltage electronic power conditioner. The POC SSMPM operates at both S-band and X-band to serve multiple roles. The SSMPM can be reconfigured to deliver Psat of 39 dBm (8 W CW) at S-band, Psat of 46 dBm (40 W CW) at X-band, and Psat of >50 dBm (>100 W Pulsed) at X-band. Lastly, our link budget calculations indicate that the SSMPM with Psat = 40 W when coupled to a 10 cm X-band transmit antenna on a low Earth orbiting (900 km) satellite can close a 1 Gbps (QPSK) data downlink to a 1 m receive antenna on ground with 3 dB margin.

Simons, Rainee N.β†—
NASA NTRS2018

A Novel Reconfigurable GaN Based Fully Solid-State Microwave Power Module for Communications/Radar Applications

The paper presents the design, integration, and performance of a novel S-/X-band, GaN based, fully solid-state microwave power module (SSMPM). The SSMPM includes diplexers, pre-amplifiers, a multi-stage medium power amplifier, SPDT switches, and CW/Pulsed high-power amplifiers. These components are synergistically integrated such that a single SSMPM is capable of being dynamically reconfigured to function as a S-/X-band amplifier for TT&C/telecommunications for command/science date downlink and radar for remote sensing onboard a planetary exploration spacecraft. The SSMPM is capable of delivering Psat of 39.5 dBm (~10 W CW) at S-band, Psat of 46.7 dBm (~45 W CW) at X-band, and Psat of 51.2 dBm (~122 W Pulsed) at X-band.

Microwave Amplifier↗
NASA NTRS2017

Reconfigurable Wideband Circularly Polarized Stacked Square Patch Antenna for Cognitive Radios

An almost square patch, a square patch and a stacked square patch with corner truncation for circular polarization (CP) are researched and developed at X-band for cognitive radios. Experimental results indicate, first, that the impedance bandwidth of a CP almost square patch fed from the edge by a 50 ohm line is 1.70 percent and second, that of a CP square patch fed from the ground plane side by a surface launch connector is 1.87 percent. Third, the impedance bandwidth of a CP stacked square patch fed by a surface launch connector is 2.22 percent. The measured center frequency for the CP square patch fed by a surface launch connector without and with an identical stacked patch is 8.45 and 8.1017 GHz, respectively. By stacking a patch, separated by a fixed air gap of 0.254 mm, the center frequency is observed to shift by as much as 348.3 MHz. The shift in the center frequency can be exploited to reconfigure the operating frequency by mechanically increasing the air gap. The results indicate that a tuning bandwidth of about 100 MHz can be achieved when the distance of separation between the driven patch and the stacked patch is increased from its initial setting of 0.254 to 1.016 mm.

Cognitive↗
NASA NTRS2017

Multiband Reconfigurable Harmonically Tuned Gallium Nitride (GaN) Solid-State Power Amplifier (SSPA) for Cognitive Radios

The paper presents the architecture of a wideband reconfigurable harmonically-tuned Gallium Nitride (GaN) Solid State Power Amplifier (SSPA) for cognitive radios. When interfaced with the physical layer of a cognitive communication system, this amplifier topology offers broadband high efficiency through the use of multiple tuned input/output matching networks. This feature enables the cognitive radio to reconfigure the operating frequency without sacrificing efficiency. This paper additionally presents as a proof-of-concept the design, fabrication, and test results for a GaN inverse Class-F type amplifier operating at X-band (8.4 GHz) that achieves a maximum output power of 5.14-W, Power Added Efficiency (PAE) of 38.6 percent, and Drain Efficiency (DE) of 48.9 percent under continuous wave (CW) operation.

Cognitive↗
NASA NTRS2017

Wideband Reconfigurable Harmonically Tuned GaN SSPA for Cognitive Radios

The paper presents the architecture of a wideband reconfigurable harmonically-tuned Gallium Nitrate (GaN) Solid State Power Amplifier (SSPA) for cognitive radios. When interfaced with the physical layer of a cognitive communication system, this amplifier topology offers broadband high efficiency through the use of multiple tuned input/output matching networks. This feature enables the cognitive radio to reconfigure the operating frequency without sacrificing efficiency. This paper additionally presents as a proof-of-concept the design, fabrication, and test results for a GaN inverse class-F type amplifier operating at X-band (8.4 GHz) that achieves a maximum output power of 5.14-W, Power Added Efficiency (PAE) of 38.6, and Drain Efficiency (DE) of 48.9 under continuous wave (CW) operation.

Cognitive↗
NASA NTRS2017

Reconfigurable Wideband Circularly Polarized Stacked Square Patch Antenna for Cognitive Radios

An almost square patch, a square patch and a stacked square patch with corner truncation for circular polarization (CP) are researched and developed at X-band for cognitive radios. Experimental results indicate, first, that the impedance bandwidth of a CP almost square patch fed from the edge by a 50 ohm line is 1.70% and second, that of a CP square patch fed from the ground plane side by a surface launch connector is 1.87%. Third, the impedance bandwidth of a CP stacked square patch fed by a surface launch connector is 2.22%. The measured center frequency for the CP square patch fed by a surface launch connector without and with an identical stacked patch is 8.45 and 8.1017 GHz, respectively. By stacking a patch, separated by a fixed air gap of 0.254 mm, the center frequency is observed to shift by as much as 348.3 MHz. The shift in center frequency, brought about by the reconfiguring of the physical layer antenna, can be exploited in a cognitive system since it expands the usable frequency spectrum for software reconfiguration in the presence of interference. In addition, varying the fixed air gap in the stacked antenna geometry by increments of 0.254 mm further expands the usable frequency spectrum.

Cognitive↗