Search NASA⌕ Search

Engineering topics

Walters, R. J.

Publications and source records attributed to Walters, R. J..

14 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

Forward Technology Solar Cell Experiment First On-Orbit Data

This paper presents first on orbit measured data from the Forward Technology Solar Cell Experiment (FTSCE). FTSCE is a space experiment housed within the 5th Materials on the International Space Station Experiment (MISSE-5). MISSE-5 was launched aboard the Shuttle return to flight mission (STS-114) on July 26, 2005 and deployed on the exterior of the International Space Station (ISS). The experiment will remain in orbit for nominally one year, after which it will be returned to Earth for post-flight testing and analysis. While on orbit, the experiment is designed to measure a 36 point current vs. voltage (IV) curve on each of the experimental solar cells, and the data is continuously telemetered to Earth. The experiment also measures the solar cell temperature and the orientation of the solar cells to the sun. A range of solar cell technologies are included in the experiment including state-of-the-art triple junction InGaP/GaAs/Ge solar cells from several vendors, thin film amorphous Si and CuIn(Ga)Se2 cells, and next-generation technologies like single-junction GaAs cells grown on Si wafers and metamorphic InGaP/InGaAs/Ge triple-junction cells. In addition to FTSCE, MISSE-5 also contains a Thin-Film Materials experiment. This is a passive experiment that will provide data on the effect of the space environment on more than 200 different materials. FTSCE was initially conceived in response to various on-orbit and ground test anomalies associated with space power systems. The Department of Defense (DoD) required a method of rapidly obtaining on orbit validation data for new space solar cell technologies, and NRL was tasked to devise an experiment to meet this requirement. Rapid access to space was provided by the MISSE Program which is a NASA Langley Research Center program. MISSE-5 is a completely self-contained experiment system with its own power generation and storage system and communications system. The communications system, referred to as PCSat, transmits and receives in the Amateur Radio band providing a node on the Amateur Radio Satellite Service. This paper presents an overview of the various aspects of MISSE-5 and a sample of the first measured on orbit data.

Walters, R. J.↗
NASA NTRS2005

Materials on the International Space Station - Forward Technology Solar Cell Experiment

This paper describes a space solar cell experiment currently being built by the Naval Research Laboratory (NRL) in collaboration with NASA Glenn Research Center (GRC), and the US Naval Academy (USNA). The experiment has been named the Forward Technology Solar Cell Experiment (FTSCE), and the purpose is to rapidly put current and future generation space solar cells on orbit and provide validation data for these technologies. The FTSCE is being fielded in response to recent on-orbit and ground test anomalies associated with space solar arrays that have raised concern over the survivability of new solar technologies in the space environment and the validity of present ground test protocols. The FTSCE is being built as part of the Fifth Materials on the International Space Station (MISSE) Experiment (MISSE-5), which is a NASA program to characterize the performance of new prospective spacecraft materials when subjected to the synergistic effects of the space environment. Telemetry, command, control, and communication (TNC) for the FTSCE will be achieved through the Amateur Satellite Service using the PCSat2 system, which is an Amateur Radio system designed and built by the USNA. In addition to providing an off-the-shelf solution for FTSCE TNC, PCSat2 will provide a communications node for the Amateur Radio satellite system. The FTSCE and PCSat2 will be housed within the passive experiment container (PEC), which is an approximately 2ft x2ft x 4in metal container built by NASA Langley Research Center (NASA LaRC) as part of the MISSE-5 program. NASA LaRC has also supplied a thin film materials experiment that will fly on the exterior of the thermal blanket covering the PCSat2. The PEC is planned to be transported to the ISS on a Shuttle flight. The PEC will be mounted on the exterior of the ISS by an astronaut during an extravehicular activity (EVA). After nominally one year, the PEC will be retrieved and returned to Earth. At the time of writing this paper, the subsystems of the experiment are being integrated at NRL, and we are preparing to commence environmental testing.

Walters, R. J.↗
NASA NTRS2004

Displacement Damage Effects in Solar Cells: Mining Damage From the Microelectronics and Photonics Test Bed Space Experiment

The objective is to develop an improved space solar cell radiation response analysis capability and to produce a computer modeling tool which implements the analysis. This was accomplished through analysis of solar cell flight data taken on the Microelectronics and Photonics Test Bed experiment. This effort specifically addresses issues related to rapid technological change in the area of solar cells for space applications in order to enhance system performance, decrease risk, and reduce cost for future missions.

Hardage, Donna↗
NASA NTRS2004

NIEL for Heavy Ions: An Analytical Approach

We describe an analytical model for calculating NIEL for heavy ions based upon screened Coulomb potentials. The model applies to any incident ion on any target material in the Coulombic limit.

Messenger, S. R.↗
NASA NTRS2004

LEO Flight Testing of GaAs on Si Solar Cells Aboard MISSES

Previous research efforts have demonstrated small area (0.04 cm) GaAs on Si (GaAs/Si) solar cells with AM0 efficiencies in excess of 17%. These results were achieved on Si substrates coated with a step graded buffer of Si(x),Ge(1-x) alloys graded to 100% Ge. Recently, a 100-fold increase in device area was accomplished for these devices in preparation for on-orbit testing of this technology aboard Materials International Space Station Experiment number 5 (MISSE5). The GaAs/Si MISSE5 experiment contains five (5) GaAs/Si test devices with areas of lcm(exp 2) and 4cm(exp 4) as well as two (2) GaAs on GaAs control devices. Electrical performance data, measured on-orbit for three (3) of the test devices and one (1) of the control devices, will be telemetered to ground stations daily. After approximately one year on orbit, the MISSE5 payload will be returned to Earth for post flight evaluation. This paper will discuss the development of the GaAs/Si devices for the MISSE5 flight experiment and will present recent ground and on-orbit performance data.

Wilt, David M.↗
NASA NTRS2003

Nonionizing energy loss (NIEL) for protons

The proton induced NIELs for representative spacecraft materials are presented for the energy range between the displacement thresholds of the material to 1000 MeV. All interaction mechanisms (Coulomb and nuclear elastic/inelastic) are fully accounted in the present NIEL calculations.

NIEL protons coulomb nuclear↗
NASA NTRS2003

The Simulation of Damage Tracks in Silicon

We describe a model for deriving heavy ion damage tracks using NIEL and the projected range. NIEL is directly calculated using screened Coulomb potentials. The model is applied to energetic ions incident on silicon.

Messenger, S. R.↗
NASA NTRS1994

Summary of Workshop on InP: Status and Prospects

The primary objective of most of the programs in InP solar cells is the development of the most radiation hard solar cell technology. In the workshop, it was generally agreed that the goal is a cell which displays high radiation tolerance in a radiation environment equivalent to a 1 MeV electron fluence of about 10(exp 16)/sq cm. Furthermore, it is desired that the radiation response of the cell be essentially flat out to this fluence - i.e. that the power output of the cell not decrease from its beginning of life (BOL) value in this radiation environment. It was also agreed in the workshop that the manufacturability of InP solar cells needs to be improved. In particular, since InP wafers are relatively dense and brittle, alternative substrates need to be developed. Research on hetero-epitaxial InP cells grown on Si, Ge, and GaAs substrates is currently underway. The ultimate goal is to develop hetero-epitaxial InP solar cells using a cheap, strong, and lightweight substrate.

Walters, R. J.↗
NASA NTRS1993

A detailed study of the photo-injection annealing of thermally diffused InP solar cells

A detailed analysis of the annealing of thermally diffused InP solar cells fabricated by the Nippon Mining Co. is presented. The cells were irradiated with 1 MeV electrons, and the induced degradation is measured using deep level transient spectroscopy and low temperature (86 K) IV measurements. Clear recovery of the photovoltaic parameters is observed during low temperature (T is less than 300 K) solar illuminations (1 sun, AMO) with further recovery at higher temperatures (300 less than T less than 500 K). For example, the output of a cell which was irradiated up to a fluence of 1 x 10(exp 16) cm(sup -2) was observed to recover to within 5 percent of the pre-irradiation output. An apparent correlation between the recovery of I(sub sc) and the annealing of the H4 defect and of the minority carrier trapping centers is observed. An apparent correlation between the recovery of VO, and the annealing of the H5 defect is also observed. These apparent correlations are used to develop a possible model for the mechanism of the recovery of the solar cells.

Walters, R. J.↗
NASA NTRS1993

High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

Messenger, S. R.↗
NASA NTRS1993

Radiation effects in Ga(0.47)In(0.53)As solar cells

The effects of irradiating Ga(0.47)In(0.53)As p-i-n junctions with 1 MeV electrons were measured using Deep Level Transient Spectroscopy (DLTS) and both dark and illuminated (1 sun, air mass zero (AM0)) current-voltage (I-V) measurements. The I-V measurements were made over the range 100K less than T less than 350K. Temperature coefficients of the Ga(0.47)In(0.53)As photovoltaic parameters are presented which follow the same general behavior as other solar cell materials (e.g. Si and GaAs). Fits of the dark I-V data to the two term diode equation before irradiation were satisfactory, yielding an estimated band-gap energy of 0.79 eV. The recombination component of the dark current was found to increase linearly with fluence. DLTS detected two radiation-induced defect levels one shallow (E(sub c)-0.10 eV) and one near mid-gap (E(sub c)-0.29 eV), and it is the near mid-gap level which is expected to be the cause of the dark current increase. The radiation-induced degradation of the open circuit voltage is shown to be accurately predicted from the dark I-V measurements. The degradation of the open circuit voltage dominated the radiation response of the photovoltaic parameters while the short circuit current was only moderately degraded. This behavior is qualitatively explained in terms of the base thickness and dopant level. Appropriate changes in the device structure are suggested which should increase the radiation resistance. Isochronal thermal annealing induced recovery in the photovoltaic parameters at approximately 400K, coinciding with an annealing stage of the near mid-gap defect level.

Walters, R. J.↗
NASA NTRS1973

Tank fragmentation test

A photographic study of a simulated tank fragmentation test was made. Sixteen disks and four spheres were ejected from a test article mounted in a vertical orientation 110 ft above a target installed on the test chamber floor. The test was performed at a chamber pressure of 25 microns. Velocities at impingement on the target ranged from 88 to 120 ft/sec; corresponding ejection velocities at the exit plane of the ejector assembly ranged from 29 to 87 ft/sec. Tumble axes of the disks were expected to be all in the north-south direction; the majority of those measured were, while some were skewed from this direction, the maximum observed being 90 deg. A typical measured tumble rate was 2.4 turns/sec. The dispersion pattern measured on the target was reasonably regular, and measured approximately 16 ft east-to-west by 11 ft north-to-south.

Daye, C. J.↗