Engineering topics
Publications and source records attributed to Wang, E. Y..
The two-dimensional plasma potential measurements are given of a space-charge dominated double sheath near a hot cathode. Laboratory data show that a virtual cathode is a self-consistent solution only for a transient cathode-plasma system. Slow charge exchange ions get trapped in the potential dip that forms the virtual cathode and eventually destroy it.
A detailed model of surface plasmon dispersion in the metal-oxide-metal tunnel diode is presented in order to clarify the spectral emission from this diode. The model predicts the location of the spectral peaks and the emission between the peaks by considering the effects of retardation on the surface plasmon. A nonradiative mode is found to play a major role in the transition from the visible to UV peaks in the diode spectra.
Nonmonotonic plasma potential structures are a common feature of many double layers and sheaths. Steady state plasma potential wells separating regions having different plasma potentials are often found in laboratory experiments. In order to exist, all such structures must find a solution to a common problem. Ions created by charge exchange or ionization in the region of the potential well are electrostatically confined and tend to accumulate and fill up the potential well. The increase in positive charge should eliminate the well. Nevertheless, steady state structures are found in which the wells do not fill up. This means that it is important to take into account processes which pump ions from the well. As examples of ion pumping of plasma wells, potential dips in front of a positively biased electron collecting anode in a relatively cold, low density, multidipole plasma are considered. Pumping is provided by ion leaks from the edges of the potential dip or by oscillating the applied potential. In the former case the two-dimensional character of the problem is shown to be important.
Nonmonotonic plasma potential structures are a common feature of many double layers and sheaths. Steady state plasma potential wells separating regions having different plasma potentials are often found in laboratory experiments. In order to exist, such structures all must find a solution to a common problem. Ions created by charge exchange or ionization in the region of the potential well are electrostatically confined and tend to accumulate and fill up the potential well. The increase in positive charge should eliminate the well. Nevertheless, steady state structures are found in which the wells do not fill up. This means that it is important to take into account processes which 'pump' ions from the well. As examples of ion pumping of plasma wells, potential dips in front of a positively biased electro collecting anode in a relatively cold, low density multidipole plasma is considered. Pumping is provided by ion leaks from the edges of the potential dip or by oscillating the applied potential. In the former case the two dimensional character of the problem is shown to be important.
Investigations of the effects of RF on plasma potential measurements with electron emitting probes and methods for interpreting data are presented. Techniques correspond to the floating and inflection point methods of single-emitting and differential emitting probes, respectively. A simple method of measurement of plasma potential fluctuations is given which makes use of time-averaged emitting probe I-V characteristics.
Reversible changes in solar cell performance were induced by AM1 illumination and evaluated by measuring short-circuit current, weak light spectral response, and minority carrier diffusion length. In n(+)p cells the change manifests itself as a reduced short-circuit current, a loss of the red response, and a reduction in minority carrier diffusion length. In p(+)n cells there are two-photon induced effects: (1) enhancement of the blue spectral response, presumably occurring in the p(+) layer and (2) degradation in open-circuit voltage at low light levels due to increased leakage occurring only after the junction edge is exposed to bright light. Most of these photon effects are attributed to defects in the silicon.
Recent calculations by Wang et al. (1974) have shown that the short-circuit current for silicon solar cells is sensitive to the impurity distribution in the diffused and base region. In the present work, these theoretical results were verified by experimentally investigating the impurity profile and sheet resistance of the diffused layers of (n+)-p silicon solar cells fabricated by normal diffusion processes and at subsequently various drive-in times. Impurity profiles of the n+ diffused layer, measured by differential Hall and resistivity technique, resemble the erfc distribution. The junction depth is larger as drive-in time increases. Measured short-circuit current is in agreement with calculated ones. Open-circuit voltage is independent of drive-in times, and its calculated values are consistent with capacitance-voltage measurements.
An extension of the width calculation for impurity distributions of complementary error function and the Gaussian function, in addition to the exponential function is used in combination with experimental width values deduced from capacitance measurements at zero bias to numerically determine the width occurring in both the n+ and p junctions. The total possible error o the semi-empirical calculation is less than plus or minus 3%. Results show considerable variation in the depletion widths occurring in the n+ and p regions for different impurity profiles.
The conventional surface photovoltage (SPV) method is extended to the measurement of the minority carrier diffusion length in diffused semiconductor junctions of the type used in a silicon solar cell. The minority carrier diffusion values obtained by the SPV method agree well with those obtained by the X-ray method. Agreement within experimental error is also obtained between the minority carrier diffusion lengths in solar cell diffusion junctions and in the same materials with n-regions removed by etching, when the SPV method was used in the measurements.
Based on classical electromagnetic theory, reflectivity calculations for various single and double optical coating systems for silicon solar cells are presented. From calculations and considerations of solar spectral response of the solar cells, the number and thickness of coating materials needed to obtain efficient solar cells can be predicted. Some experimental results on single layer coated cells are also presented for comparison with calculations, and agreement is good. By means of microwave transmission line analogy, the design of the multilayer coating can be simplified by using Tchebycheff polynomials.
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The current-voltage characteristics of n(plus)-p silicon solar cells with 0.1, 1.0, 2.0, and 10 ohm-cm p-type base materials have been examined in detail. In addition to the usual I-V measurements, we have studied the temperature dependence of the slope of the I-V curve at the origin by the lock-in technique. The excess junction current coefficient (Iq) deduced from the slope at the origin depends on the square root of the intrinsic carrier concentration. The Iq obtained from the I-V curve fitting over the entire forward bias region at various temperatures shows the same temperature dependence. This result, in addition to the presence of an aging effect, suggest that the surface channel effect is the dominant cause of the excess junction current.