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Wang, Guoyu

Publications and source records attributed to Wang, Guoyu.

Intrinsically low thermal conductivity from a quasi-one-dimensional crystal structure and enhanced electrical conductivity network via Pb doping in SbCrSe 3

The development of new routes for the production of thermoelectric materials with low-cost and high-performance characteristics has been one of the long-term strategies for saving and harvesting thermal energy. We report a new approach for improving thermoelectric properties by employing the intrinsically low thermal conductivity of a quasi-one-dimensional (quasi-1D) crystal structure and optimizing the power factor with aliovalent ion doping. As an example, we demonstrated that SbCrSe 3 , in which two parallel chains of CrSe 6 octahedra are linked by antimony atoms, possesses a quasi-1D property that resulted in an ultra-low thermal conductivity of 0.56 W m -1 K -1 at 900 K. After maximizing the power factor by Pb doping, the peak ZT value of the optimized Pb-doped sample reached 0.46 at 900 K, which is an enhancement of 24 times that of the parent SbCrSe 3 structure. The mechanisms that lead to low thermal conductivity derive from anharmonic phonons with the presence of the lone-pair electrons of Sb atoms and weak bonds between the CrSe 6 double chains. Our results shed new light on the design of new and high-performance thermoelectric materials.

36 MATERIALS SCIENCE↗

Hierarchically structured TiO 2 for Ba-filled skutterudite with enhanced thermoelectric performance

The influence of hierarchical TiO 2 inclusions on electrical and thermal transport properties has been investigated in the Ba-filled skutterudite compound Ba 0.3 Co 4 Sb 12 synthesized by ball milling followed by hot pressing. The hierarchical TiO 2 , with the morphology of nanocrystallite aggregates, was prepared using a carbon sphere-templated method. It was found that TiO 2 inclusions strongly enhance the Seebeck coefficient while they weakly degrade the electric conductivity. In addition, TiO 2 inclusions reduce significantly the lattice thermal conductivity through all-scale length phonon scattering due to the hierarchically-structured TiO 2 particles. ZT values up to 1.2 were obtained for Ba 0.3 Co 4 Sb 12 with an optimal amount and dispersion of TiO 2 inclusions. These observations reported here demonstrate an exciting scientific opportunity to raise the figure-of-merit of filled skutterudites via hierarchical dispersion.

36 MATERIALS SCIENCE↗

Microstructure and thermoelectric properties of CoSb 2.75 Ge 0.25-x Te x prepared by rapid solidification

Since the vibration modes of the pnicogen rings in CoSb3-based skutterudites fall within the range of frequencies of heat-carrying phonons, disruption of the rings by doping should have a strong influence on heat transport in this material. To test the premise, single-phase double-doped CoSb 2.75 Ge 0.25-x Te x x (x = 0.125–0.20) compounds were synthesized by combining melt spinning with a spark plasma sintering method. Following the melt-spinning process, the side of the ribbons contacting the copper drum is featureless and reflects its amorphous nature while the free surface of the ribbons is composed of 30–80 nm grains. After spark plasma processing the average grain size of the bulk samples is about 200 nm. High-resolution transmission electron microscopy images show an in situ nanostructure consisting of circular, 15 nm diameter dots of Te- and Ge-enriched skutterudite phase embedded in the skutterudite matrix. Transport properties were measured from 2 to 800 K as a function of Te and Ge content on the pnicogen (Sb) rings and the results were correlated with the structural data. Double-doping on pnicogen rings with Ge and Te, and using melt-spinning processing, results in binary skutterudite compounds that possess an impressive figure of merit of ZT ~ 1.1 at 750 K.

36 MATERIALS SCIENCE↗

Thermal and electronic charge transport in bulk nanostructured Zr{sub 0.25}Hf{sub 0.75}NiSn composites with full-Heusler inclusions

Bulk Zr{sub 0.25}Hf{sub 075}NiSn half-Heusler (HH) nanocomposites containing various mole fractions of full-Heusler (FH) inclusions were prepared by solid state reaction of pre-synthesized HH alloy with elemental Ni at 1073 K. The microstructures of spark plasma sintered specimens of the HH/FH nanocomposites were investigated using transmission electron microscopy and their thermoelectric properties were measured from 300 K to 775 K. The formation of coherent FH inclusions into the HH matrix arises from solid-state Ni diffusion into vacant sites of the HH structure. HH(1-y)/FH(y) composites with mole fraction of FH inclusions below the percolation threshold, y{approx}0.2, show increased electrical conductivity, reduced Seebeck coefficient and increased total thermal conductivity arising from gradual increase in the carrier concentration for composites. A drastic reduction ({approx}55%) in {kappa}{sub l} was observed for the composite with y=0.6 and is attributed to enhanced phonon scattering due to mass fluctuations between FH and HH, and high density of HH/FH interfaces. - Graphical abstract: Large reduction in the lattice thermal conductivity of bulk nanostructured half-Heusler/full-Heusler (Zr{sub 0.25}Hf{sub 075}NiSn/ Zr{sub 0.25}Hf{sub 075}Ni{sub 2}Sn) composites, obtained by solid-state diffusion at 1073 K of elemental Ni into vacant sites of the half-Heusler structure, arising from the formation of regions of spinodally decomposed HH and FH phases with a spatial composition modulation of {approx}2 nm. Highlights: > Bulk composites from solid state transformation of half-Heusler matrix through Ni diffusion. > Formation of coherent phase boundaries between half-Heusler matrix and full-Heusler inclusion. > Alteration of thermal and electronic transports with increasing full-Heusler inclusion. > Enhanced phonon scattering at half-Heusler/ full-Heusler phase boundaries.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗