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Wang, K. L.

Publications and source records attributed to Wang, K. L..

20 records · Page 2

Defect distribution near the surface of electron-irradiated silicon

The surface-defect distributions of electron-irradiated n-type silicon have been investigated using a transient capacitance technique. Schottky, p-n junction, and MOS structures were used in profiling the defect distributions. Surface depletions of defects observed were attributed to the vacancy distribution, but not that of oxygen, and other capture centers' distributions. The vacancy diffusion length at 300 K was estimated to be about 3-6 microns.

Wang, K. L.

Transient effect of lubricant on elastohydro-dynamic film thickness

The inlet solution of the elastohydrodynamic lubricated rolling contact problem was obtained by considering lubricants with transient viscosity. The effect of the viscoelastic retardation time of the lubricant on the center film thickness was investigated. The effect of transient viscosity in response to a sudden pressure was found to be insignificant in determining the film thickness in elastohydrodynamic contacts.

Wang, K. L.