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Wang, W. L.

Publications and source records attributed to Wang, W. L..

8 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Reduced CO 2 uptake and growing nutrient sequestration from slowing overturning circulation

Current Earth system models (ESMs) project dramatic slowing (28–42% by 2100) of Atlantic Meridional Overturning Circulation and Southern Meridional Overturning Circulation (SMOC) across a range of climate scenarios, with a complete shutdown of SMOC possible by year 2300. Slowing meridional overturning circulation (MOC) differentially impacts the ocean biological and solubility carbon pumps, leaving the net impact on ocean carbon uptake uncertain. Here using a suite of ESMs, we show that slowing MOC reduces anthropogenic carbon uptake by the solubility pump but increases deep-ocean storage of carbon and nutrients by the biological pump. The net effect reduces ocean uptake of anthropogenic CO 2 . The deep-ocean nutrient sequestration will increasingly depress global-scale, marine net primary production over time. As a result, MOC slowdown represents a positive feedback that could extend or intensify peak-warmth climate conditions on multi-century timescales.

58 GEOSCIENCES↗
NASA NTRS2001

Modeling of Ice Flow and Internal Layers Along a Flow Line Through Swiss Camp in West Greenland

An anisotropic ice flow line model is applied to a flow line through Swiss Camp (69.57 N, 49.28 W) in West Greenland to estimate the dates of internal layers detected by Radio-Echo Sounding measurements. The effect of an anisotropic ice fabric on ice flow is incorporated into the steady state flow line model. The stress-strain rate relationship for anisotropic ice is characterized by an enhancement factor based on the laboratory observations of ice deformation under combined compression and shear stresses. By using present-day data of accumulation rate, surface temperature, surface elevation and ice thickness along the flow line as model inputs, a very close agreement is found between the isochrones generated from the model and the observed internal layers with confirmed dates. The results indicate that this part of Greenland ice sheet is primarily in steady state.

Wang, W. L.↗
NASA NTRS2001

Interannual Variations of Shallow Firn Temperature at Greenland Summit

Firn-temperature profiles are calculated in a thermal model using continuous surface temperatures derived from Automatic Weather Station (AWS) data and passive microwave data in the Greenland Summit region during the period 1987-1999. The results show that significant interannual variations of mean summer (June to August) and annual temperatures occur in the top 15 m, in addition to the normal seasonal cycle of firn temperature. At 5 m depth, the seasonal cycle is damped to 13% of the surface seasonal amplitude, but even at 15 m about 1% or 0.6 C of the seasonal cycle persists. Both summer and mean annual temperatures decrease from 1987 to 1992, followed by a general increasing trend. Interannual variability is 5 C at the surface, but only is only dampened to 3.2 C at 10 m depth and 0.7 C at 15 m depth. Dampening of the interannual variability with depth is slower than dampening of the seasonal cycle, because of the longer time constant of the interannual variation. The warmer spring and summer temperatures experienced in the top 5 m, due to both the seasonal cycle and interannual variations, affect the rate of firn densification, which is non-linearly dependent on temperature. During the 12 year period 1987-1999, the mean annual surface temperature is -29.2 C, and the mean annual 15 m temperature is -30. 1 C, which is more than 1 C warmer than a 15-m borehole temperature representing the period of about 1959 and warmer than the best-fit temperature history by Alley and Koci back to 1500 A.D..

Jun, Li↗
NASA NTRS1984

Ohmic Versus Rectifying Contacts of Au to N-gaas by Ion Sputtering

Results of investigations of argon ion sputtering of heavily doped n-GaAs are compared with those obtained from studies of Au/low doping density n-GaAs contacts. The Au contact on Si-doped GaAs was nearly ohmic when the surface contamination (carbon and oxides) was reduced prior to deposition by chemical cleaning. However, when ion sputtering was used in situ to clean the surface, rectifying contact was produced whose barrier height varied with the energy of the sputtering ion. It was found that ion sputtering of GaAs doped to more than 3 x 10 to the 18th power/cu may be used to change ohmic contact to rectifying contacts. The barrier height may be changed by changing the ion energy. The behavior results from the sputter creation of deep level acceptor states at the GaAs surface. Annealing after sputtering can restore the contact to nearly an ohmic character.

Wang, Y. X.↗
NASA NTRS1984

Defect studies in one MeV electron irradiated GaAs and in Al/sub x Ga/sub l-x As P-N junction solar cells

Deep level transient spectroscopy reveals that the main electron traps for one-MeV electron irradiated GaAs cells are E9c)-0.31, E(c)-0.90 eV, and the main hole trap is due to the level. Electron trap density was found to vary from 3/tens-trillion ccm for 2/one quadrillion cm 3/3.7 quadrillion cm for 21 sextillion cm electron fluence for electron fluence; a similar result was also obtained for the hole trap density. As for the grown-in defects in the Al(x)Ga(1-x)As p-n junciton cells, only two electron traps with energies of E(c)-0.20 and E(c)-0.34 eV were observed in samples with x = 0.17, and none was found for x 0.05. Auger analysis on the Al(x)Ga(1-x) As window layer of the GaAs solar cell showed a large amount of oxygen and carbon contaminants near the surface of the AlGaAs epilayer. Thermal annealing experiment performed at 250 C for up to 100 min. showed a reduction in the density of both electron traps.

Li, S. S.↗
NASA NTRS1982

Defects and annealing studies in 1-Me electron irradiated (AlGa)As-GaAs solar cells

The deep-level defects and recombination mechanisms in the one-MeV electron irradiated (AlGa)As-GaAs solar cells under various irradiation and annealing conditions are discussed. Deep-level transient spectroscopy (DLTS) and capacitance-voltage (CV) techniques were used to determine the defect and recombination parameters such as energy levels and defect density, carrier capture cross sections and lifetimes for both electron and hole traps as well as hole diffusion lengths in these electron irradiated GaAs solar cells. GaAs solar cells used in this study were prepared by the infinite solution melt liquid phase epitaxial (LPE) technique at Hughes Research Lab., with (Al0.9Ga0.1)-As window layer, Be-diffused p-GaAs layer on Sn-doped n-GaAs or undoped n-GaAs active layer grown on n(+)-GaAs substrate. Mesa structure with area of 5.86x1000 sq cm was fabricated. Three different irradiation and annealing experiments were performed on these solar cells.

Li, S. S.↗
NASA NTRS1980

Deep-level defects and recombination parameters in proton irradiated AlGaAs-GaAs solar cells

The deep-level defects produced in high efficiency AlGaAs-GaAs solar cells by proton energies of 50, 100, 200, and 290 keV are investigated. Proton fluences were from 10 to the 10th to 10 to the 13th p/sq cm. The results show that the diode ideality factor varies between 1.9 and 2.1, indicating that the dominant current component is due to the recombination of electron-hole pairs via deep-level traps in the junction space charge region of these diodes. The recombination current increases with increasing proton fluence and proton energy. The reduction of open circuit voltage, short circuit current, and conversion efficiency in the irradiated cells relates directly to the density of the deep-level defects induced by proton irradiation.

Li, S. S.↗