Engineering topics

Wang, Yow-Gwo

Publications and source records attributed to Wang, Yow-Gwo.

6 records

DOE OSTI2017

Amplitude versus phase effects in extreme ultraviolet lithography mask scattering and imaging

It is well established that extreme ultraviolet (EUV) mask multilayer roughness leads to wafer-plane linewidth roughness (LWR) in the lithography process. Analysis and modeling done to date has assumed, however, that the roughness leading to scatter is primarily a phase effect and that the amplitude can be ignored. Under this assumption, simple scattering measurements can be used to characterize the statistical properties of the mask roughness. Here, we explore the implications of this simplifying assumption by modeling the imaging impacts of the roughness amplitude component as a function of the balance between amplitude and phase induced scatter. In addition to model-based analysis, we also use an EUV microscope to compare experimental through focus data to modeling in order to assess the actual amount of amplitude roughness on a typical EUV multilayer mask. The results indicate that amplitude roughness accounts for less than 1% of the total scatter for typical EUV masks.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2017

Impact of tool design on defect detection sensitivity in extreme ultraviolet actinic blank inspection

Here, we discuss the impact of various tool design perspectives on defect detection sensitivity for dark-field-based extreme ultraviolet (EUV) actinic blank inspection. We consider the impact of pixel size, EUV source type, and photon collection efficiency on critical defect signal-to-noise ratio (SNR) performance. The results show that as the pixel size approaches the target defect image size, defect SNR increases, and that pixel size also determines the dominant noise source in the inspection system. Moreover, the choice of the EUV source affects the optimal numerical aperture (NA) and illumination settings. For plasma-discharged sources, more photons provided by larger partial coherent illumination can improve the defect SNR, while coherent illumination is needed to get a higher defect SNR for synchrotron-based source. In the end, we show that simply increasing the photon collection efficiency by using high-NA optics or increasing the source power cannot always improve the defect SNR. In a speckle-noise dominated situation, larger outer NA includes more noise than defect signal, thus resulting in a lower SNR. The impact of source power also saturates at a certain level as the system becomes speckle-noise limited compared to photon-noise limited.

42 ENGINEERING↗

DOE OSTI2017

Impact of noise sources and optical design on defect detection sensitivity in extreme ultraviolet actinic pattern inspection tool

Here, we discuss the impact of various noise sources and the optical design in bright field extreme ultraviolet (EUV) actinic inspection of mask features for defects in the patterned absorber. It is shown that an optimum pixel size is needed to maximize the defect signal-to-noise ratio (SNR) to balance the trade-off in increasing signal strength with shot noise from defect signal and the background pattern intensity (mask layout image) and speckle noise from the mask blank roughness. Moreover, we consider defocus showing that the EUV mask phase effect has an asymmetric impact on pattern defect SNR's through-focus behavior. The impact of defocus limits inspection performance based on defect SNR. Using critical defect sizes in a case study, we show the defect SNR performance of the limiting case and discuss the possibility of utilizing a nominal defocus in the inspection system to leverage the phase effect of EUV mask absorber to improve the defect SNR. A 50% improvement in defect SNR is shown to be possible by introducing a -50 nm nominal defocus into the bright field inspection system.

42 ENGINEERING↗

DOE OSTI2016

Emulation of anamorphic imaging on the SHARP extreme ultraviolet mask microscope

The SHARP high-numerical aperture actinic reticle review project is a synchrotron-based, extreme ultraviolet (EUV) microscope dedicated to photomask research. SHARP emulates the illumination and imaging conditions of current EUV lithography scanners and those several generations into the future. An anamorphic imaging optic with increased mask-side numerical aperture (NA) in the horizontal and increased demagnification in the vertical direction has been proposed in this paper to overcome limitations of current multilayer coatings and extend EUV lithography beyond 0.33 NA. Zoneplate lenses with an anamorphic 4×/8× NA of 0.55 are fabricated and installed in the SHARP microscope to emulate anamorphic imaging. SHARP’s Fourier synthesis illuminator with a range of angles exceeding the collected solid angle of the newly designed elliptical zoneplates can produce arbitrary angular source spectra matched to anamorphic imaging. A target with anamorphic dense features down to 50-nm critical dimension is fabricated using 40 nm of nickel as the absorber. In a demonstration experiment, anamorphic imaging at 0.55 4×/8× NA and 6 deg central ray angle (CRA) is compared with conventional imaging at 0.5 4× NA and 8 deg CRA. A significant contrast loss in horizontal features is observed in the conventional images. Finally, the anamorphic images show the same image quality in the horizontal and vertical directions.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Phase measurements of EUV mask defects

Extreme Ultraviolet (EUV) Lithography mask defects were examined on the actinic mask imaging system, SHARP, at Lawrence Berkeley National Laboratory. Also, a quantitative phase retrieval algorithm based on the Weak Object Transfer Function was applied to the measured through-focus aerial images to examine the amplitude and phase of the defects. The accuracy of the algorithm was demonstrated by comparing the results of measurements using a phase contrast zone plate and a standard zone plate. Using partially coherent illumination to measure frequencies that would otherwise fall outside the numerical aperture (NA), it was shown that some defects are smaller than the conventional resolution of the microscope. We found that the programmed defects of various sizes were measured and shown to have both an amplitude and a phase component that the algorithm is able to recover.

42 ENGINEERING↗

DOE OSTI2014

A broader view on EUV-masks: adding complementary imaging modes to the SHARP microscope

The authors are expanding the capabilities of the SHARP microscope by implementing complementary imaging modes. SHARP (the SEMATECH High-NA Actinic Reticle review Project) is an actinic, synchrotron-based microscope dedicated to extreme ultraviolet (EUV) photomask research. SHARP’s programmable Fourier Synthesis Illuminator and its use of Fresnel zoneplate lenses as imaging optics provide a versatile framework, facilitating the implementation of diverse modes beyond conventional imaging. In addition to SHARP’s set of standard zoneplates, we have created more than 100 zoneplates for complementary imaging modes, all designed to extract additional information from photomasks, improve navigation and enhance defect detection. More than 50 new zoneplates are installed in the tool; the remaining lenses are currently in production. Here in this paper we discuss the design and fabrication of zoneplates for complementary imaging modes and present image data, obtained using Zernike Phase Contrast and different implementations of Differential Interference Contrast.

36 MATERIALS SCIENCE↗