Pressure-Induced Changes in the Crystal Structure and Electrical Conductivity of GeV 4 S 8
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Engineering topics
Publications and source records attributed to Wang, Yuejian.
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Here, we have studied the high-pressure vibrational and structural behavior of bulk graphite and graphene nanoplatelets at room temperature by means of high-pressure Raman spectroscopic and x-ray diffraction probes. We have detected a clear pressure-induced structural transition in both materials, evidenced by the appearance of new Bragg peaks and Raman features, deviating from the starting hexagonal graphitic structure. The high-pressure phase is identified as a partially disordered orthorhombic structure, consisting of mixed sp 2 - and sp 3 -type bonding. Our experimental findings serve as direct evidence for the existence of a metastable transient modification in cold compressed carbon, lying between the sp 2 -type graphite and sp 3 -type diamond allotropes.
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Abstract not provided
Stress-induced grain growths were observed in many nanosized metals and alloys. Correctly understanding this unique feature is critical in designing and tailoring proper nanostructures for particular applications in mechanically harsh environments, e.g., high-stress concentration, mechanical vibrations. Though extensive researches have been carried out on metals or alloys subjected to deformation, experimental studies on metals deformed in a confining environment are severely lacking. Nearly all of the previous investigations on this theme were carried out either through theoretical simulations or by using transmission electron microscopy to probe grain variation in vacuo. In the present study, we employed a powerful high-pressure technique along with high-energy synchrotron X-rays to monitor the grain size evolution in situ, in nanosized nickel deformed in a confining environment. Our experimental data demonstrate, for the first time, that grain sizes grow with the increment of the confining pressure. Finally, since plasticity strongly depends on the grain size of a given material, understanding and controlling fundamental mechanisms leading to stress-assisted grain growth may pave a new route to improve the mechanical properties of nanosized materials by tuning confining environment within which the deformation is operated.
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Surface doping is being used as an effective approach to improve the mechanical, optical, electronic, and magnetic properties of various materials. For example, experimental studies have proven that rare-earth element doping can enhance the optical properties of silicon nanostructures. However, the majority of previous investigations focused on either bulk materials or nanosized spherical crystals. Here we present a comparative study on semiconducting germanium (Ge) nanowires with and without surface doping by using multiple integrated characterization probes, including high resolution scanning/transmission electron microscopy (SEM/TEM), in situ high pressure synchrotron X-ray diffraction (XRD), and Raman spectroscopy. Our results reveal that under pressure the stability of the Ge-I phase (diamond structure) in erbium (Er)-doped Ge nanowires is enhanced compared to undoped Ge nanowires. We also found an increased stability of the Ge-II phase (body centered tetragonal structure) in Er-doped Ge nanowires during decompression. Furthermore, the presence of Er doping elevates the transition kinetics by showing a smaller pressure span needed for a complete Ge-I to Ge-II phase transformation. In contrast, Er doping has a negligible impact on the mechanical properties of Ge nanowires under high pressure, exhibiting a very different mechanical behavior from other foreign element-doped nanostructures. This anomalous doping effect was explained based on surface modification and decoration. Furthermore, these findings are of both fundamental and applied significance, because they not only provide a thorough understanding of the distinct role of surface doping in nanoscale materials, but also yield insight with regard to a given material’s design for favorable properties in semiconductor nanostructures.