Ward, T. | Search NASA

DOE OSTI2019

Numerical Simulation and Validation of Gas and Molten Metal Flows in Close-Coupled Gas Atomization

Molten metal atomization in close-coupled gas atomization dies can operate between two limiting conditions, jetting and filming, together with several complex mechanisms: liquid-gas drafting, downward/upward shearing, melt bouncing, etc. Liquid jet deformation depends on flow and geometric parameters, such as liquid Reynolds, liquid Weber, and gas Mach numbers, as well as gas jet apex angle and melt tube tip extension and aspect ratio, among others. Understanding their effect is of importance for the metal powder making industry. Numerical gas atomization studies can provide approximated flow information and consider a wide range of conditions, beyond experimental reach. Here, 3D high-resolution simulations employing a 5-equation compressible flow model coupled with the volume-of-fluid method are compared with experiments, for liquid Weber number in the range of 1–30 and liquid Reynolds number below 10,000. This validation explores the predicting capabilities of the numerical model.

Hernandez, F.↗

DOE OSTI2014

Design rules for dislocation filters

The efficacy of strained layer threading dislocation filter structures in single crystal epitaxial layers is evaluated using numerical modeling for (001) face-centred cubic materials, such as GaAs or Si{sub 1−x}Ge{sub x}, and (0001) hexagonal materials such as GaN. We find that threading dislocation densities decay exponentially as a function of the strain relieved, irrespective of the fraction of threading dislocations that are mobile. Reactions between threading dislocations tend to produce a population that is a balanced mixture of mobile and sessile in (001) cubic materials. In contrast, mobile threading dislocations tend to be lost very rapidly in (0001) GaN, often with little or no reduction in the immobile dislocation density. The capture radius for threading dislocation interactions is estimated to be approximately 40 nm using cross section transmission electron microscopy of dislocation filtering structures in GaAs monolithically grown on Si. We find that the minimum threading dislocation density that can be obtained in any given structure is likely to be limited by kinetic effects to approximately 10{sup 4}–10{sup 5 }cm{sup −2}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗