Using MRED to Screen Multiple Node Charge Collection Mitigated SOI Layouts.
Abstract not provided.
Black, Jeffrey↗
Engineering topics
Publications and source records attributed to Warren, Kevin M..
Abstract not provided.
Abstract not provided.
The RADSAFE simulation framework is described and applied to model Single Event Upsets (SEU) in a 0.25 micron CMOS 4Mbit Static Random Access Memory (SRAM). For this circuit, the RADSAFE approach produces trends similar to those expected from classical models, but more closely represents the physical mechanisms responsible for SEU in the SRAM circuit.