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Watson, R. K.

Publications and source records attributed to Watson, R. K..

Trends in Device SEE Susceptibility from Heavy Ions

The sixth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications in December issues of IEEE - Nuclear Science Transactions for 1985, 1987, 1989, 1991, and the IEEE Workshop Record, 1993. Trends in SEE susceptibility (including soft errors and latchup) for state-of- are evaluated.

single event effects latchup radiation hardening↗

An observation of proton-induced latchup

Proton-induced latchup in a CMOS microprocessor known to have a very low heavy-ion-induced latchup threshold LET was observed. The latchup cross section vs. proton energy for three different bias conditions is displayed. Average measures of latchup current within an 11-ms window following the onset of latchup are provided, as a function of bias and incident proton energy. These data can be interpreted in terms of the present understanding of SEE phenomena.

Nichols, Donald K.↗

Single-event upset (SEU) in a DRAM with on-chip error correction

Results are given of SEU measurements on 256K dynamic RAMs with on-chip error correction. They are claimed to be the first ever reported. A (12/8) Hamming error-correcting code was incorporated in the layout. Physical separation of the bits in each code word was used to guard against multiple bits being disrupted in any given word. Significant reduction in observed errors is reported.

Zoutendyk, J. A.↗