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Weber, J.

Publications and source records attributed to Weber, J..

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

DLTS Investigation of the Energy Spectrum of Si:Mg Crystals

Electrically active centers in n-type magnesium-doped silicon crystals are studied by deep-level transient spectroscopy (DLTS). Magnesium is introduced by diffusion from a metal film on the surface at 1100°C. It is found that two levels with a similar concentration of ~6 × 10{sup 14} cm{sup –3} dominate in the DLTS spectrum; the value approximately corresponds to the interstitial magnesium (Mg{sub i}) concentration expected from diffusion conditions and published data on the Hall effect. The dependence of the electron emission rate from these levels on the electric-field strength agrees qualitatively with the Poole–Frenkel effect, which indicates the donor nature of both levels, although the absolute value of the effect differs from theoretical value. The activation energies of these levels found by the extrapolation of emission rates measured at various temperatures to zero field are 112 and 252 meV, which coincides within the accuracy with energies of ground states of the first and second donor levels of Mg determined previously from optical absorption. Thus, it is shown that when using high-quality initial material and the selected diffusion mode, interstitial magnesium atoms are the dominant centers with levels in the upper half of the band gap.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

The Structure of Liquid and Amorphous Hafnia

Understanding the atomic structure of amorphous solids is important in predicting and tuning their macroscopic behavior. Here, we use a combination of high-energy X-ray diffraction, neutron diffraction, and molecular dynamics simulations to benchmark the atomic interactions in the high temperature stable liquid and low-density amorphous solid states of hafnia. The diffraction results reveal an average Hf–O coordination number of ~7 exists in both the liquid and amorphous nanoparticle forms studied. The measured pair distribution functions are compared to those generated from several simulation models in the literature. We have also performed ab initio and classical molecular dynamics simulations that show density has a strong effect on the polyhedral connectivity. The liquid shows a broad distribution of Hf–Hf interactions, while the formation of low-density amorphous nanoclusters can reproduce the sharp split peak in the Hf–Hf partial pair distribution function observed in experiment. The agglomeration of amorphous nanoparticles condensed from the gas phase is associated with the formation of both edge-sharing and corner-sharing HfO6,7 polyhedra resembling that observed in the monoclinic phase.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Single and double acceptor-levels of a carbon-hydrogen defect in n-type silicon

In the present study, we discuss the origin of two dominant deep levels (E42 and E262) observed in n-type Si, which is subjected to hydrogenation by wet chemical etching or a dc H-plasma treatment. Their activation enthalpies determined from Laplace deep level transient spectroscopy measurements are E{sub C}-0.06 eV (E42) and E{sub C}-0.51 eV (E262). The similar annealing behavior and identical depth profiles of E42 and E262 correlate them with two different charge states of the same defect. E262 is attributed to a single acceptor state due to the absence of the Poole-Frenkel effect and the lack of a capture barrier for electrons. The emission rate of E42 shows a characteristic enhancement with the electric field, which is consistent with the assignment to a double acceptor state. In samples with different carbon and hydrogen content, the depth profiles of E262 can be explained by a defect with one H-atom and one C-atom. From a comparison with earlier calculations [Andersen et al., Phys. Rev. B 66, 235205 (2002)], we attribute E42 to the double acceptor and E262 to the single acceptor state of the CH{sub 1AB} configuration, where one H atom is directly bound to carbon in the anti-bonding position.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Two different carbon-hydrogen complexes in silicon with closely spaced energy levels

An acceptor and a single donor state of carbon-hydrogen defects (CH{sub A} and CH{sub B}) are observed by Laplace deep level transient spectroscopy at 90 K. CH{sub A} appears directly after hydrogenation by wet chemical etching or hydrogen plasma treatment, whereas CH{sub B} can be observed only after a successive annealing under reverse bias at about 320 K. The activation enthalpies of these states are 0.16 eV for CH{sub A} and 0.14 eV for CH{sub B}. Our results reconcile previous controversial experimental results. We attribute CH{sub A} to the configuration where substitutional carbon binds a hydrogen atom on a bond centered position between carbon and the neighboring silicon and CH{sub B} to another carbon-hydrogen defect.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Interstitial carbon formation in irradiated copper-doped silicon

The influence of a copper impurity on the spectrum of defects induced in p-Si crystals containing a low oxygen concentration by irradiation with electrons with an energy of 5 MeV at room temperature is studied by deep-level transient spectroscopy. It is found that interstitial carbon atoms (C{sub i}) which are the dominant defects in irradiated samples free of copper are unobservable immediately after irradiation, if the concentration of mobile interstitial copper atoms (Cu{sub i}) is higher than the concentration of radiation defects. This phenomenon is attributed to the formation of (Cu{sub i}, C{sub i}) complexes, which do not introduce levels into the lower half of the band gap. It is shown that these complexes dissociate upon annealing at temperatures of 300–340 K and, thus, bring about the appearance of interstitial carbon.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Identification of titanium-hydrogen complexes with up to four hydrogen atoms in silicon

Using high-resolution Laplace deep level transient spectroscopy studies, several TiH-related complexes (E40′, E170, E170′, and E260) were observed in wet-chemically etched and H-plasma treated n-type Si. We assign E40′ and E170 to two different configurations of Ti with one H atom. Both of them are shown to behave as single donor states with an activation enthalpy of E{sub C} − 0.07 eV (E40′) and E{sub C} − 0.34 eV (E170) in the upper half of Si. E170′ with an activation energy of E{sub C} − 0.37 eV is correlated with the donor state of the Ti{sub i}H{sub 2} defect, whereas E260 is attributed to the donor state of Ti{sub i}H{sub 3}. Besides the TiH defects, the presence of electrically inactive TiH{sub 4} is reported. No titanium-hydrogen-related levels were observed in p-type Si.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Preparation of Ag Schottky contacts on n-type GaN bulk crystals grown in nitrogen rich atmosphere by the hydride vapor phase epitaxy technique

Electrical properties of Schottky contacts on n-type GaN grown in nitrogen rich atmosphere with different N/Ga ratios by hydride vapor phase epitaxy were investigated. We show that tunneling of electrons from the conduction band of GaN to the metal is dominant in our samples. The quality of Schottky contacts does not only depend on surface preparation but also on the growth conditions of the crystals. Schottky contacts on these crystals show an increasing deterioration when higher N/Ga growth ratios are used. We correlate our results with the presence of negatively charged gallium vacancies in the samples. These charges compensate the positively charged donors and lead to a significant increase in series resistance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Extreme Conditions Modeling Workshop Report

Sandia National Laboratories (SNL) and the National Renewable Energy Laboratory (NREL) hosted the Wave Energy Converter (WEC) Extreme Conditions Modeling (ECM) Workshop in Albuquerque, NM on May 13th-14th, 2014. The objective of the workshop was to review the current state of knowledge on how to model WECs in extreme conditions (e.g. hurricanes and other large storms) and to suggest how U.S. Department of Energy (DOE) and national laboratory resources could be used to improve ECM methods for the benefit of the wave energy industry.

16 TIDAL AND WAVE POWER↗
DOE OSTI2014

Investigations on residual strains and the cathodoluminescence and electron beam induced current signal of grain boundaries in silicon

Cathodoluminescence (CL) and electron beam induced current (EBIC) measurements were used to investigate the optical behavior and electrical activity of grain boundaries (GBs) in coarsely grained silicon. Electron backscatter diffraction (EBSD) was applied for a comprehensive characterization of the structural properties of the high angle and low angle GBs (HAGBs and LAGBs) in the sample. It was found that not only the EBIC but also the panchromatic (pan) CL contrast of Σ3 HAGBs strongly depends on the hkl-type of the boundary plane. At room temperature coherent Σ3 GBs exhibit no significant contrast in the CL or EBIC images, whereas at low temperatures the pan-CL contrast is strong. For incoherent Σ3 GBs, a strong pan-CL and EBIC contrast was observed in the entire temperature range. Only on a LAGB (misorientation angle 4.5°) CL investigations at low temperatures revealed a line with peak position at about (0.82 ± 0.01) eV, usually related to the dislocation associated D1 transition. Cross-correlation EBSD was applied to analyze the strain fields of Σ3 HAGBs as well as of the LAGB. All the components of the local strain tensors were quantitatively determined. The relationship between the extension of the strain field at the LAGB and the spatial D1 intensity distribution is discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Reassignment of the O{sub Se}−V{sub Cd} complex in CdSe

An IR absorption study of CdSe single crystals is presented. The as-received material revealed three absorption lines at 1094.2, 1107.5, and 1126.3 cm{sup −1}, which were previously assigned to the O{sub Se}−V{sub Cd} complex [G. Chen et al., Phys. Rev. Lett. 101, 195502 (2008)] We show that each of the lines is accompanied by a number of weaker satellites with intensities which match the natural abundances of sulfur isotopes. In contrast to the original identification it is suggested that these peaks are local vibrational modes of a SO{sub n} complex. The three modes correspond to different orientations of the complex in the CdSe lattice. Arguments are presented in favor of 2 oxygen atoms (n = 2) in the complex. Measurements with uniaxial stress applied to the samples revealed defect symmetries and activation energies for the defect reorientation. The complex was found to be stable up to 750 °C.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Confirmation of freely rotating H{sub 2} in ZnO

A Raman scattering study of H{sub 2} in ZnO which addresses the formation process, the thermal stability, the interaction with the phonon spectrum, the position in the host lattice, as well as the ortho-para conversion rates is presented. In particular, it is shown that the molecule is practically a free rotator stable up to 700 °C. Furthermore, an ortho-para conversion rate at 79 K was found to be 7.5 h, whereas the back conversion at room temperature occurs within less than 0.5 h. The interstitial site is suggested as the most likely position for the molecule in the ZnO lattice.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

On the capability of deep level transient spectroscopy for characterizing multi-crystalline silicon

The suitability of the deep level transient spectroscopy (DLTS) technique in exploring locations with high and degraded carrier lifetimes containing grain-boundaries (GBs) in multicrystalline silicon (mc-Si) wafers was studied. The types and locations of GBs were determined in mc-Si samples by electron backscatter diffraction. Mesa-type Schottky diodes were prepared at (along) GBs and at reference, GB-free locations. Detected DLTS signals varied strongly along the same GB. Experiments with dislocation networks, model structures for GBs, showed that GB-related traps may be explored only using special arrangement of a GB and the diode contacts. Iron-related carrier traps were detected in locations with degraded carrier lifetimes. Densities of the traps for near-GB and for GB free locations were compared to the lifetime measurement results.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Annealing kinetics of boron-containing centers in electron-irradiated silicon

The annealing kinetics of B{sub i}O{sub i} pairs created by fast-electron irradiation in Si wafers is studied. The wafers are grown by the Czochralski method and doped with boron to different levels. It is found that, at a particular temperature, the annealing rate steadily increases with increasing boron concentration. The results are described with a simple model that takes into consideration the interaction of interstitial boron atoms with oxygen atoms and substitutional boron atoms. In the context of the model, the temperature dependence of the dissociation rate of the B{sub i}O{sub i} complex is calculated.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Identification of copper-copper and copper-hydrogen complexes in silicon

The centers formed in silicon as a result of interaction between the substitutional copper impurity (Cu{sub s}) and interstitial copper (Cu{sub i}) or hydrogen (H) atoms, which are mobile at room temperature, are investigated in this study using the deep-level transient spectroscopy (DLTS) technique. It is shown that a well-known photoluminescence center, which includes four copper atoms, is formed from Cu{sub s} via the subsequent addition of Cu{sub i}. Both intermediate complexes (Cu{sub s}-Cu{sub i} and Cu{sub s}-2Cu{sub i}) are identified by their deep levels in the lower half of the band gap. It is found that Cu{sub s} atoms form complexes with one, two, and three hydrogen atoms, with Cu{sub s}-H and Cu{sub s}-2H being electrically active. It is noted that the addition of either hydrogen or copper has a similar effect on the deep-level structure of Cu{sub s}.

36 MATERIALS SCIENCE↗
NASA NTRS1994

Properties of nearly perfect crystals at very low temperatures

Data shows that the frequency stability of 5 MHz AT-cut quartz crystal oscillators is improved by lowering the temperature to 4.3 K. The resultant level of stability is apparently not, at this point, sufficient for a clock accurate to 1 part in 10(exp 17). However, many improvements are possible in the scheme presented here. These would involve better temperature regulation, better crystal mounting and vibration isolation, and lower temperatures. Below the lambda-transition at 2.17 K the residual bubbling of the bath would be eliminated. Thus, the prospect of a successful clock built on this scheme is not ruled out.

Weber, J.↗
NASA NTRS1994

Removal of Residual Chromium from Aluminum Oxide by Containerless Liquid-phase Processing

Berneuil sapphire was purified of Cr 3+ by containerless melting and processing at ca. 2550 K in high purity argon, dry air and pure oxygen. Recovered material was examined by laser induced fluorescence and Raman spectroscopy. The Cr 3+ fluorescence intensity decreased in processed specimens at rates proportional to the chromium concentration and p(O 2 ) 0.21 . The initial chromium concentration was ca. 5 ppm and decreased by factors of ca. 50, 3000, and 2x10 5 after processing for 300 seconds in argon, air and oxygen, respectively. Evidence is presented that the Cr 3+ was removed predominantly as CrO 2 (g) and not by conversion to other oxidation states of chromium in the condensed phase. A comparison of the Raman peak shifts for as-received and processed samples indicates that considerable stress was retained during containerless solidification of the highly undercooled melts.

sapphire↗
NASA NTRS1983

Properties of large nearly perfect crystals at very low temperatures

A liquid helium cryostat of a size and construction unavailable commercially, was built for use in measuring the Q of several materials at milli-Kelvin temperatures. The design and testing of the cryostat is described as well as the design of the experiment vacuum chamber and adaptor for the dilution refrigerator insert. Theory, design, and testing are also discussed for the magnetic coils built to levitate the materials so as to isolate them and increase the measured Q. A four point suspension with capacitor end plates as the transducer was used to obtain preliminary Q measurements of 6061 aluminum alloy and single crystal silicon. Results are tabulated.

Davis, W.↗