Engineering topics

Weinberg, Irving

Publications and source records attributed to Weinberg, Irving.

At least 19 records

NASA NTRS1995

High and low energy proton radiation damage in p/n InP MOCVD solar cells

InP p(+)nn(+) MOCVD solar cells were irradiated with 0.2 MeV and 10 MeV protons to a fluence of 10(exp 13)/sq cm. The degradation of power output, IV behavior, carrier concentration and defect concentration were observed at intermediate points throughout the irradiations. The 0.2 MeV proton irradiated solar cells suffered much greater and more rapid degradation in power output than those irradiated with 10 meV protons. The efficiency losses were accompanied by larger increases in the recombination currents in the 0.2 MeV proton irradiated solar cells. The low energy proton irradiations also had a larger impact on the series resistance of the solar cells. Despite the radiation induced damage, the carrier concentration in the base of the solar cells showed no reduction after 10 MeV or 0.2 MeV proton irradiations and even increased during irradiation with 0.2 MeV protons. In a DLTS study of the irradiated samples, the minority carrier defects H4 and H5 at E(v) + 0.33 and E(v) + 0.52 eV and the majority carrier defects E7 and E10 at E(c)- 0.39 and E(c)-0.74 eV, were observed. The defect introduction rates for the 0.2 MeV proton irradiations were about 20 times higher than for the 10 MeV proton irradiations. The defect E10, observed here after irradiation, has been shown to act as a donor in irradiated n-type InP and may be responsible for obscuring carrier removal. The results of this study are consistent with the much greater damage produced by low energy protons whose limited range causes them to stop in the active region of the solar cell.

Rybicki, George↗

NASA NTRS1995

Indium phosphide space solar cell research: Where we are and where we are going

Indium phosphide is considered to be a strong contender for many photovoltaic space applications because of its radiation resistance and its potential for high efficiency. An overview of recent progress is presented, and possible future research directions for indium phosphide space solar cells are discussed. The topics considered include radiation damage studies and space flight experiments.

Jain, R. K.↗

NASA NTRS1994

Advanced Solar Cells for Satellite Power Systems

The multiple natures of today's space missions with regard to operational lifetime, orbital environment, cost and size of spacecraft, to name just a few, present such a broad range of performance requirements to be met by the solar array that no single design can suffice to meet them all. The result is a demand for development of specialized solar cell types that help to optimize overall satellite performance within a specified cost range for any given space mission. Historically, space solar array performance has been optimized for a given mission by tailoring the features of silicon solar cells to account for the orbital environment and average operating conditions expected during the mission. It has become necessary to turn to entirely new photovoltaic materials and device designs to meet the requirements of future missions, both in the near and far term. This paper will outline some of the mission drivers and resulting performance requirements that must be met by advanced solar cells, and provide an overview of some of the advanced cell technologies under development to meet them. The discussion will include high efficiency, radiation hard single junction cells; monolithic and mechanically stacked multiple bandgap cells; and thin film cells.

Flood, Dennis J.↗

NASA NTRS1993

Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells

Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and silicon (Si) solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of light weight, mechanically strong, and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5- and 3-MeV proton irradiations have been explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence was calculated by simulating the cell performance. The diffusion length damage coefficient, K(sub L), was also plotted as a function of proton fluence.

Jain, Raj K.↗

NASA NTRS1991

High resolution electrolyte for thinning InP by anodic dissolution and its applications to EC-V profiling, defect revealing and surface passivation

An extensive experimental study was conducted using various electrolytes in an effort to find an appropriate electrolyte for anodic dissolution of InP. From the analysis of electrochemical characteristics in the dark and under different illumination levels, x ray photoelectron spectroscopy and SEM/Nomarski inspection of the surfaces, it was determined that the anodic dissolution of InP front surface layers by FAP electrolyte is a very good choice for rendering smooth surfaces, free of oxides and contaminants and with good electrical characteristics. The FAP electrolyte, based on HF, CH3COOH, and H2O2 appears to be inherently superior to previously reported electrolytes for performing accurate EC-V profiling of InP at current densities of up to 0.3 mA/sq cm. It can also be used for accurate electrochemical revealing of either precipitates or dislocation density with application to EPD mapping as a function of depth, and for defect revealing of multilayer InP structures at any depth and/or at the interfaces.

Faur, Maria↗

NASA NTRS1991

A theoretical comparison of the near-optimum design and predicted performance of n/p and p/n indium phosphide homojunction solar cells

Using a detailed simulation model of p(+)nn(+) and n(+)pp(+) indium phosphide (InP) homojunction solar cells, extensive parametric variation computer simulation runs were performed to aid in making near-optimum designs for these two solar cell configurations. The values of all the geometrical and material parameters corresponding to the near-optimal designs of both these configurations are presented. The results of parametric variation runs are presented for each configuration showing how the performance parameters J(sub sc), V(sub oc), and eta vary with each of the cell design parameters for the near-optimally designed cell. Finally, the theoretically obtained results are discussed, and the relative merits and drawbacks of the two configurations are compared.

Goradia, Chandra↗

NASA NTRS1991

Enhanced EOS photovoltaic power system capability with InP solar cells

The Earth Observing System (EOS), which is part of the International Mission to Planet Earth, is NASA's main contribution to the Global Change Research Program which opens a new era in international cooperation to study the Earth's environment. Five large platforms are to be launched into polar orbit, two by NASA, two by ESA, and one by the Japanese. In such an orbit the radiation resistance of indium phosphide solar cells combined with the potential of utilizing five micron cell structures yields an increase of 10 percent in the payload capability. If further combined with the advanced photovoltaic solar array the payload savings approaches 12 percent.

Bailey, Sheila G.↗

NASA NTRS1991

Thin solar cell and lightweight array

A thin, lightweight solar cell that utilizes front contact metallization is presented. Both the front light receiving surface of the solar cell and the facing surface of the cover glass are recessed to accommodate this metallization. This enables the two surfaces to meet flush for an optimum seal.

Brandhorst, Henry W., Jr.↗

NASA NTRS1991

Thin, Lightweight Solar Cell

Improved design for thin, lightweight solar photovoltaic cells with front contacts reduces degradation of electrical output under exposure to energetic charged particles (protons and electrons). Increases ability of cells to maintain structural integrity under exposure to ultraviolet radiation by eliminating ultraviolet-degradable adhesives used to retain cover glasses. Interdigitated front contacts and front junctions formed on semiconductor substrate. Mating contacts formed on back surface of cover glass. Cover glass and substrate electrostatically bonded together.

Brandhorst, Henry W., Jr.↗

NASA NTRS1991

Photoluminescence lifetime measurements in InP wafers

A simple apparatus to measure the minority carrier lifetime in InP has been developed. The technique stimulates the sample with a short pulse of light from a diode laser and measures the photoluminescence decay to extract the minority carrier lifetime. The photoluminescence lifetime in InP as a function of doping on both n- and p-type material is examined. The results also show a marked difference in the lifetime of n-type InP and p-type InP of similar doping levels. N-type InP shows a lifetime considerably longer than the expected radiative limited lifetime.

Landis, Geoffrey A.↗

NASA NTRS1991

Effects of proton irradiation on the performance of InP/GaAs solar cells

InP solar cells are known to be more radiation resistant than either GaAs or Si. In addition, AMO total area efficiencies approaching 19 percent were attained for InP. However, the present high substrate cost presents a barrier to the eventual widespread use of InP cells in space. In addition, if cell thinning becomes desirable, their relative fragility presents a problem. For these reasons, the NASA Lewis Research Center has initiated a program, aimed at producing thin InP cells, by heteroepitaxial deposition of InP on cheaper, more durable substrates. To date, a short term feasibility study as Spire has resulted in cells processed from InP heteroepitaxially deposited on Si substrates with an intervening thin GaAs layer (InP/GaAs/Si) and cells produced from InP deposited on GaAs (InP/GaAs). As a result of this short study efficiencies of over 7 and 9 percent were achieved for InP/GaAs/Si and InP/GaAs respectively. Although these efficiencies are low, they represent a modest and encouraging starting point for a more intensive program. Obviously, when considering economy and mechanical strength, cells processed on silicon substrates are preferred. However, although the InP/GaAs cells are not the final desirable products of this program, their properties serve to highlight several roadblocks to be overcome in producing cells with the more desirable cost and strength properties. Hence, in the present case, the properties of the InP/GaAs cells before and after irradiation by 10 MeV protons are examined. A similar study of InP/GaAs/Si cells will be reported on at a later date.

Weinberg, Irving↗

NASA NTRS1991

Key factors limiting the open circuit voltage of n(+)pp(+) indium phosphide solar cells

Solar cells made from gallium arsenide (GaAs), with a room temperature bandgap of E(sub g) = 1.43 eV have exhibited the best measured open circuit voltage (V sub OC) of 1.05 V at 1 AMO, 25 C. The material InP is in many ways similar to GaAs. A simple calculation comparing InP to GaAs then shows that solar cells made from InP, with E(sub g) = 1.35 at 300 K, should exhibit the best measured (V sub OC) of approximately 950 mV at 1 AMO, 300 K. However, to date, the best measured V(sub OC) for InP solar cells made by any fabrication method is 899 mV at AM1.5, 25 C which would translate to 912 mV at 1 AMO, 25 C. The V(sub OC) of an n(+)pp(+) InP solar cell is governed by several factors. Of these, some factors, such as the thickness and doping of the emitter and base regions, are easily controlled and can be adjusted to desired values dictated by a good performance optimizing model. Such factors were not considered. There are other factors which also govern V(sub OC), and their values are not so easily controlled. The primary ones among these are (1) the indirect or Hall-Shockley-Read lifetimes in the various regions of the cell, (2) the low-doping intrinsic carrier concentration n(sub i) of the InP material, (3) the heavy doping factors in the emitter and BSF regions, and (4) the front surface recombination velocity S(sub F). The influence of these latter factors on the V(sub OC) of the n(+)pp(+) InP solar cell and the results were used to produce a near-optimum design of the n(+)pp(+) InP solar cell.

Goradia, Chandra↗

NASA NTRS1991

Determination of series resistance of indium phosphide solar cells

The series resistance of a solar cell is an important parameter, which must be minimized to achieve high cell efficiencies. The cell series resistance is affected by the starting material, its design, and processing. The theoretical approach proposed by Jia, et. al., is used to calculate the series resistance of indium phosphide solar cells. It is observed that the theoretical approach does not predict the series resistance correctly in all cases. The analysis was modified to include the use of effective junction ideality factor. The calculated results were compared with the available experimental results on indium phosphide solar cells processed by different techniques. It is found that the use of process dependent junction ideality factor leads to better estimation of series resistance. An accurate comprehensive series resistance model is warranted to give proper feedback for modifying the cell processing from the design state.

Jain, Raj K.↗

NASA NTRS1991

Investigation of anodic and chemical oxides grown on p-type InP with applications to surface passivation for n(+)-p solar cell fabrication

Most of the previously reported InP anodic oxides were grown on a n-type InP with applications to fabrication of MISFET structures and were described as a mixture of In2O3 and P2O5 stoichiometric compounds or nonstoichiometric phases which have properties similar to crystalline compounds In(OH)3, InPO4, and In(PO3)3. Details of the compositional change of the anodic oxides grown under different anodization conditions were previously reported. The use of P-rich oxides grown either by anodic or chemical oxidation are investigated for surface passivation of p-type InP and as a protective cap during junction formation by closed-ampoule sulfur diffusion. The investigation is based on but not limited to correlations between PL intensity and X-ray photoelectron spectroscopy (XPS) chemical composition data.

Faur, Maria↗

NASA NTRS1991

Indium phosphide solar cells

The direction for InP solar cell research; reduction of cell cost; increase of cell efficiency; measurements needed to better understand cell performance; n/p versus p/n; radiation effects; major problems in cell contacting; and whether the present level of InP solar cell research in the USA should be maintained, decreased, or increased were considered.

Weinberg, Irving↗

NASA NTRS1991

Recent progress in InP solar cell research

Significant new developments in InP solar cell research are reviewed. Recent accomplishments include monolithic multibandgap two junction cells (three and two terminal) using InP as the top cell and lattice matched GaInAs and GaInAsP as the bottom, low bandgap component. Concentrator cells include the three terminal multibandgap cell and n + p cell using an InP substrate. The review also includes small scale production of ITO/InP cells and results for n + p InP and ITO/InP cells in space on board the LIPS 3 satellite.

Weinberg, Irving↗

NASA NTRS1991

Advanced power systems for EOS

The Earth Observing System, which is part of the International Mission to Planet Earth, is NASA's main contribution to the Global Change Research Program. Five large platforms are to be launched into polar orbit: two by NASA, two by the European Space Agency, and one by the Japanese. In such an orbit the radiation resistance of indium phosphide solar cells combined with the potential of utilizing 5 micron cell structures yields an increase of 10 percent in the payload capability. If further combined with the Advanced Photovoltaic Solar Array, the total additional payload capability approaches 12 percent.

Bailey, Sheila G.↗

NASA NTRS1991

Advanced power systems for EOS

The Earth Observing System (EOS), which is part of the International Mission to Planet Earth, is NASA's main contribution to the Global Change Research Program. Five large platforms are to be launched into polar orbit: two by NASA, two by the European Space Agency, and one by the Japanese. In such an orbit the radiation resistance of indium phosphide solar cells combined with the potential of utilizing 5-micron cell structures yields an increase of 10 percent in the payload capability. If further combined with the Advanced Photovoltaic Solar Array, the total additional payload capability approaches 12 percent.

Bailey, Sheila G.↗