Whitaker, J. F. | Search NASA

NASA NTRS1991

Subpicosecond time-resolved studies of coherent phonon oscillations in thin-film YBa2Cu3O(6+x) (x less than 0.4)

The results are reported of the first time-resolved observation of impulsively generated coherent optical phonon oscillations in the semiconducting cuprate compound YBa2Cu3O(6+x ) (x less than 0.4). The oscillations, which were probed through time-resolved transmissivity modulation, had a period of 237 fsec at room temperature, corresponding to a Raman active mode at A(1g) symmetry at 142/cm. No oscillations were observed in the superconducting form of Y-Ba-Cu-O either above or below Tc. The amplitude, frequency, and linewidth of this mode were measured over a temperature range from about 7 K to room temperature.

Chwalek, J. M.↗

NASA NTRS1990

Femtosecond optical absorption studies of nonequilibrium electronic processes in high T(c) superconductors

The results are reported of femtosecond optical transient absorption experiments performed on the superconducting compounds YBa2Cu3O(7-x) (x about 0) and Bi2Sr2Ca2Cu3O(10+delta) (delta about 0) and nonsuperconducting YBa2Cu3O(6+y) (y less than 0.4) for sample temperatures ranging from about 7 K to room temperature. Nonequilibrium heating was found to occur on a subpicosecond time scale. A distinct, dramatic increase in the relaxation time was observed for the superconducting samples as the sample temperature was lowered below the critical temperatures of the respective films. Accompanying the increase in relaxation time was an increase in the peak fractional transmissivity change. No such changes were observed for the nonsuperconducting YBCO sample.

Chwalek, J. M.↗

NASA NTRS1990

Electro-optical Probing Of Terahertz Integrated Circuits

Electro-optical probe developed to perform noncontact, nondestructive, and relatively noninvasive measurements of electric fields over broad spectrum at millimeter and shorter wavelengths in integrated circuits. Manipulated with conventional intregrated-circuit-wafer-probing equipment and operated without any special preparation of integrated circuits. Tip of probe small electro-optical crystal serving as proximity electric-field sensor.

Bhasin, K. B.↗

NASA NTRS1989

External electro-optic probing of millimeter-wave integrated circuits

An external, noncontact electro-optic measurement system, designed to operate at the wafer level with conventional wafer probing equipment and without any special circuit preparation, has been developed. Measurements have demonstrated the system's ability to probe continuous and pulsed signals on microwave integrated circuits on arbitrary substrates with excellent spatial resolution. Experimental measurements on a variety of digital and analog circuits, including a GaAs selectively-doped heterostructure transistor prescaler, an NMOS silicon multiplexer, and a GaAs power amplifier MMIC are reported.

Whitaker, J. F.↗

NASA NTRS1989

External electro-optic probing of millimeter-wave integrated circuits

An external, noncontact electro-optic measurement system, designed to operate at the wafer level with conventional wafer probing equipment and without any special circuit preparation, has been developed. Measurements have demonstrated the system's ability to probe continuous and pulsed signals on microwave integrated circuits on arbitrary substrates with excellent spatial resolution. Experimental measurements on a variety of digital and analog circuits, including a GaAs selectively-doped heterostructure transistor prescaler, an NMOS silicon multiplexer, and a GaAs power amplifier MMIC are reported.

Whitaker, J. F.↗